Infineon Technologies CY7C1412KV18-333BZXI

Overview

CY7C1412KV18-333BZXI from Cypress Semiconductor is a 2M × 18, 36-Mbit QDR® II SRAM with two-word burst architecture, 333 MHz clock frequency, DDR interfaces on independent read/write ports, and 1.8 V core / 1.4–1.8 V I/O supply. It delivers 666 MT/s data transfer rate and supports concurrent read/write operations in high-bandwidth networking buffers and packet forwarding engines.

For engineers reviewing the CY7C1412KV18-333BZXI datasheet, CY7C1412KV18-333BZXI pinout, CY7C1412KV18-333BZXI application, or CY7C1412KV18-333BZXI equivalent, key selection criteria include dual-port concurrency, echo-clock–assisted timing closure at 333 MHz, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, HSTL-compatible 18-bit bidirectional data width, and FBGA-165 package compatibility with high-density routing.

Technical Context

This QDR II SRAM implements fully synchronous, pipelined memory access with physically separate read and write data paths-eliminating bus turnaround delays. Its dual input clock pairs (K/K for address/control, C/C for output timing) enable precise DDR edge alignment and skew compensation via echo clocks CQ/CQ.

The device uses internal self-timed write circuitry and supports depth expansion via RPS/WPS and four byte-write selects (BWS[1:0]). With DOFF pin control, it operates in either 1-cycle (DOFF = LOW) or 1.5-cycle (DOFF = HIGH) read latency mode-matching legacy QDR I or optimizing for higher throughput respectively.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T36120L10BG and IS61WV102418BLL-10BLI, CY7C1412KV18-333BZXI uniquely balances 333 MHz QDR II performance, 1.8 V power efficiency, DOFF-configurable latency, and echo-clock–assisted timing-making it optimal for mid-tier telecom and test equipment where supply voltage, timing margin, and legacy compatibility intersect.

Availability

CY7C1412KV18-333BZXI is available at Aetrix Electronics and suitable for network packet buffering, high-speed test instrumentation, and telecom baseband processing requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1412KV18-333BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems, with emphasis on signal integrity and timing precision.

CY7C1412KV18 belongs to the QDR II SRAM product line, engineered specifically for zero-turnaround, concurrent-access memory subsystems in packet-switched infrastructure and real-time data acquisition platforms.

FAQ

What is the function of the DOFF pin on CY7C1412KV18-333BZXI?

The DOFF (Data Output Fall-off) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency for QDR II operation; when LOW, it selects 1-cycle latency for QDR I compatibility. This setting directly affects timing budget allocation for read data setup/hold at the controller and must be fixed at power-up.

Can CY7C1412KV18-333BZXI operate with only one clock pair (K/C) instead of two?

Yes-it supports single-clock-domain operation using K for both input latching and output driving (with C tied to K). In this mode, CQ echoes K instead of C, simplifying clock tree design at the cost of reduced deskew capability compared to dual-clock operation with independent C/C and CQ/CQ.

How does byte write select (BWS) work for the 18-bit data width?

BWS[1:0] controls two independent 9-bit byte lanes: BWS0 enables writing to D[8:0], and BWS1 enables D[17:9]. Both signals are sampled synchronously with D[17:0] on the rising edge of K. Deasserting either BWS leaves its corresponding byte unchanged-preserving prior data without requiring a read-modify-write sequence.

Is the 165-ball FBGA package of CY7C1412KV18-333BZXI compatible with standard reflow profiles?

Yes-the package complies with IPC/JEDEC J-STD-020 moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak temperature ≤ 260 °C). Thermal resistance (θ_JA) is 24 °C/W, and the 1.4 mm height allows compatibility with low-profile heat spreaders in dense PCB layouts.