Infineon Technologies CY7C1413AV18-250BZCT
- Part No.:
- CY7C1413AV18-250BZCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1413AV18-250BZCT.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1413AV18-250BZCT from Cypress Semiconductor is a 2M × 18-bit, 36-Mbit QDR-II SRAM with separate read/write ports, 250 MHz operation (400 ps clock period), DDR interfaces on both ports enabling 500 MT/s data rate, and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers full data coherency and synchronous self-timed writes for high-speed packet buffering in network line cards.
For engineers reviewing the CY7C1413AV18-250BZCT datasheet, CY7C1413AV18-250BZCT pinout, CY7C1413AV18-250BZCT application, or CY7C1413AV18-250BZCT equivalent, key selection criteria include burst depth (4-word), HSTL I/O compatibility (VDDQ = 1.4–1.8 V), DLL-enabled timing accuracy, echo clock support (CQ/CQ), and JTAG 1149.1 test access.
Technical Context
The CY7C1413AV18-250BZCT implements QDR-II architecture with independent read and write data paths, eliminating bus turnaround overhead. Its dual-clock domain uses K/K for address/data capture and C/C for output timing, with echo clocks CQ/CQ referenced to C/C to compensate for board flight-time skew.
Internally organized as four 512K × 18 arrays, it supports synchronous depth expansion via RPS/WPS and byte write select (BWS[1:0]), latching all inputs on rising edges of K/K and driving outputs on rising edges of C/C. The integrated Delay Lock Loop (DLL) aligns internal timing to ±25 ps jitter tolerance at 250 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2M × 18-bit organization) |
| Max Clock Frequency | 250 MHz - defines 400 ps minimum clock period for timing closure |
| Data Rate | 500 MT/s - achieved via DDR interface on both read and write ports |
| VDD / VDDQ | Core VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4–1.8 V - enables HSTL-compatible signaling |
| Burst Length | 4-word burst - reduces address bus toggling frequency by 4× vs. single-word access |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - supports high-density PCB layout with controlled impedance routing |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testing and debug in assembled systems |
Pinout & Package
165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant (Pb-free option available).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A[18:0] | Address Input | 19-bit multiplexed address bus latched on rising edge of K clock for both read/write access |
| D[17:0] | Write Data Input | 18-bit synchronous data input sampled on rising edge of K/K during active WPS |
| Q[17:0] | Read Data Output | 18-bit DDR output driven on rising edges of C/C; tri-stated when RPS inactive |
| RPS / WPS | Port Select Control | Active-low synchronous enables for independent read/write port activation |
| BWS[1:0] | Byte Write Select | Two active-low signals controlling 9-bit byte writes (BWS0 → D[8:0], BWS1 → D[17:9]) |
| C / C, CQ / CQ | Output Clock & Echo Clock | C/C drive Q[17:0]; CQ/CQ are phase-aligned echoes used for receiver deskew in high-speed systems |
| ZQ | Impedance Calibration | Connects to external resistor to ground to calibrate output driver impedance to 0.2 × RQ |
| DOFF | DLL Disable | Active-low signal to disable internal Delay Lock Loop - alters timing parameters significantly |
Key Features
| Feature | Design Value |
|---|---|
| Separate Read/Write Ports | Eliminates data bus turnaround delay and contention - enables concurrent read/write operations without arbitration logic |
| 4-Word Burst Architecture | Reduces effective address bus frequency by 4×, lowering routing complexity and EMI in high-speed designs |
| Echo Clocks (CQ/CQ) | Enable source-synchronous data capture at the controller with ±50 ps setup/hold margin at 500 MT/s |
| Variable Drive HSTL Outputs | Configurable output strength via ZQ calibration - ensures signal integrity across varying trace lengths and loads |
| Synchronous Self-Timed Writes | Internal write cycle completion detection - removes need for external write-enable timing control or wait-state generation |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer with simultaneous read (forwarding engine) and write (ingress parser) access. Use Value: 500 MT/s throughput and 4-word burst reduce memory controller overhead by 75% versus single-word SRAMs. | Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH add-drop multiplexers. IC Role / Device Role / Timing Role: Dual-port SRAM serving as elastic store between asynchronous tributary and line-rate clock domains. Use Value: Independent RPS/WPS and echo clocks enable deterministic latency alignment across multiple devices in parallel configurations. |
| Baseband Processing Cache | High-Speed Test Equipment Memory |
Use Scenario: Temporary storage of FFT coefficients and channel estimation data in LTE/LTE-A baseband processors. IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfaced directly to DSP core's dual-ported memory controller. Use Value: Synchronous self-timed writes eliminate write-stall cycles, improving real-time processing determinism. | Use Scenario: Pattern memory in automated test equipment (ATE) for high-speed digital IC validation. IC Role / Device Role / Timing Role: High-fidelity stimulus/response storage with precise timing control via DLL and echo clocks. Use Value: DLL alignment to ±25 ps and CQ-referenced capture allow sub-nanosecond timing resolution at 500 MT/s. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1413AV18-278BZCT | Higher max frequency (278 MHz), tighter tCK (360 ps), higher operating current (790 mA @ 25°C) | Requires stricter power delivery and thermal management; suitable only where >500 MT/s is mandatory | Select only if system timing budget demands <400 ps clock period and board layout supports enhanced decoupling |
| AS7C362000B-250BIN | Same density (2M × 18), but uses QDR-II+ architecture with 2-cycle latency and higher power (1.2 A typical) | Lacks echo clocks (CQ/CQ); requires external deskew circuitry for >400 MT/s operation | Prefer when migrating legacy QDR-II designs to newer process nodes and accepting added board-level timing compensation |
Compared with CY7C1413AV18-278BZCT and AS7C362000B-250BIN, the CY7C1413AV18-250BZCT offers optimal balance of timing margin, power efficiency (790 mA max), and echo-clock–assisted signal integrity - making it ideal for cost-sensitive, thermally constrained telecom and networking platforms.
Availability
CY7C1413AV18-250BZCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing cache requiring stable component supply and long-term industrial lifecycle support.
Supply support for CY7C1413AV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.
The QDR-II SRAM product line was engineered specifically for deterministic, low-latency, high-throughput memory subsystems in packet-switched infrastructure - emphasizing concurrent access, timing predictability, and signal integrity at multi-Gbps rates.
FAQ
What is the function of the ZQ pin on CY7C1413AV18-250BZCT?
The ZQ pin is an impedance calibration input that connects to an external precision resistor (typically 240 Ω) to ground. It enables dynamic adjustment of the output driver impedance for Q[17:0], CQ, and CQ pins to match the system data bus, ensuring consistent signal integrity across voltage and temperature variations. It must never be left floating or tied directly to GND.
Can CY7C1413AV18-250BZCT operate in single-clock mode?
Yes - the device supports single-clock mode where K and C are tied together (and K and C tied together), simplifying clock routing. In this configuration, data is captured and driven using only the K/K pair, and echo clocks CQ/CQ are generated relative to K/K. Setup/hold timing margins tighten, requiring careful PCB layout and reduced trace length asymmetry.
How does the DOFF pin affect timing behavior?
Asserting DOFF (driving low) disables the internal Delay Lock Loop, reverting timing to fixed, process-corner–dependent values. This increases clock-to-output skew by up to 120 ps and invalidates all DLL-dependent AC specifications (e.g., tAC, tQV). Use only for debug or fail-safe modes - not for normal operation - and consult Table 13 (DLL Off Mode) in Rev. *D datasheet for revised parameters.
What is the purpose of BWS[1:0] in CY7C1413AV18-250BZCT?
BWS[1:0] are active-low byte write select signals that control which 9-bit half of the 18-bit D[17:0] bus is written during each burst cycle. BWS0 enables D[8:0], BWS1 enables D[17:9]. When both are deasserted, no data is written; when only one is asserted, only its corresponding byte is updated - preserving the other 9 bits in memory without requiring a read-modify-write sequence.
CY7C1413AV18-250BZCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1413AV18-250BZCT FAQ
1.How can I place an order for CY7C1413AV18-250BZCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1413AV18-250BZCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1413AV18-250BZCT reliable?
The price and inventory of CY7C1413AV18-250BZCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1413AV18-250BZCT is usually 5 days.
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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1413AV18-250BZCT transactions.
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Once your CY7C1413AV18-250BZCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1413AV18-250BZCT?
For technical support, including CY7C1413AV18-250BZCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1413AV18-250BZCT requirements.
6.How does Aetrix verify that CY7C1413AV18-250BZCT is sourced from the original manufacturer or authorized distributors?
All CY7C1413AV18-250BZCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1413AV18-250BZCT meets industry standards.
7.What is the process for return or replacement of CY7C1413AV18-250BZCT?
All CY7C1413AV18-250BZCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1413AV18-250BZCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1413AV18-250BZCT part is unused and in its original packaging.
Return procedure for CY7C1413AV18-250BZCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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