Infineon Technologies CY7C1413JV18-200BZXI

Overview

CY7C1413JV18-200BZXI from Cypress Semiconductor is a 36-Mbit QDR-II SRAM with 2M × 18 organization, 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers 200 MHz operation (400 MT/s DDR), 4-word burst architecture, and separate read/write ports enabling concurrent access. Used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1413JV18-200BZXI datasheet, CY7C1413JV18-200BZXI pinout, CY7C1413JV18-200BZXI application, or CY7C1413JV18-200BZXI equivalent, key selection criteria include QDR-II timing compliance, 165-ball FBGA (15 × 17 mm) mechanical fit, DLL-enabled 1.5-cycle read latency, and HSTL-18 I/O compatibility with synchronous DDR interfaces.

Technical Context

This device implements true dual-port QDR-II architecture: independent K/K clocks latch write/read addresses on alternating edges, while C/C clocks drive output data with echo clocks (CQ/CQ) for precise source-synchronous capture. The internal Delay Lock Loop (DLL) aligns output data to C/C edges with sub-cycle accuracy when enabled.

All inputs are registered on K/K rising edges; outputs are registered on C/C rising edges. Write operations are self-timed and synchronous, supporting depth expansion via RPS/WPS and byte-level write masking (BWS[1:0]). Core logic operates at 1.8 V ±0.1 V; I/O drivers use VDDQ = 1.4–1.8 V with programmable drive strength and ZQ impedance calibration.

Key Specifications

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXI suffix). Package supports automated optical inspection and thermal dissipation in multi-layer PCBs with internal power/ground planes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Compared with IDT72T3615L10PA and IS61WV204818BLL-200BLI, CY7C1413JV18-200BZXI uniquely combines HSTL-18 I/O with ZQ calibration and integrated JTAG, making it optimal for new designs targeting signal integrity, test coverage, and mixed-voltage interoperability in telecom infrastructure.

Availability

CY7C1413JV18-200BZXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, FPGA co-processor cache, and high-speed test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1413JV18-200BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and system-level integration.

CY7C1413JV18 belongs to the QDR-II SRAM product line, engineered specifically for deterministic-latency, high-throughput buffering in packet-switched infrastructure where concurrent read/write and source-synchronous timing are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1413JV18-200BZXI?

The DOFF pin disables the internal Delay Lock Loop when pulled low. In DLL-off mode, the device operates as a QDR-I SRAM with 1-cycle read latency and maximum frequency reduced to 167 MHz. This provides backward compatibility with legacy controllers that lack QDR-II timing support, while retaining pin and functional equivalence.

How does ZQ calibration affect signal integrity in this SRAM?

ZQ calibration adjusts the output driver impedance of Q[17:0], CQ, and CQ pins to match the system data bus (typically 48–50 Ω). By connecting a 240 Ω resistor from ZQ to ground, the device achieves ±10% impedance tolerance across voltage, temperature, and process variations - directly reducing reflection-induced jitter and improving eye opening at 400 MT/s.

Can CY7C1413JV18-200BZXI operate with VDDQ = 1.4 V while maintaining 200 MHz performance?

Yes. The datasheet specifies VDDQ = 1.4 V to 1.8 V operation at 200 MHz. At 1.4 V, HSTL-18 output swing is reduced (~0.7 V), but timing margins remain sufficient due to DLL-assisted data alignment and echo clock deskewing. System validation is recommended for marginal trace lengths or high-noise environments.

What is the purpose of BWS[1:0] in the 2M × 18 configuration?

BWS[1:0] are active-low byte write select signals that control which 9-bit segment of the 18-bit D[17:0] bus is written during each burst cycle. BWS0 enables D[8:0], BWS1 enables D[17:9]. This allows partial writes without read-modify-write sequences, preserving data integrity in multi-threaded buffer management applications like packet header updates.