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Infineon Technologies CY7C1413JV18-300BZC

Part No.:
CY7C1413JV18-300BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1413JV18-300BZC.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,804

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Product details

Overview

CY7C1413JV18 from Cypress Semiconductor is a 36-Mbit QDR-II SRAM with 2M × 18 organization, operating at 300 MHz with DDR interfaces on independent read/write ports, 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers 600 MHz effective data rate, 1.5-cycle read latency (DLL enabled), and supports burst-4 sequential transfers for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C1413JV18 datasheet, CY7C1413JV18 pinout, CY7C1413JV18 application, or CY7C1413JV18 equivalent, key selection criteria include its dual-clock DDR timing architecture, echo clock (CQ/CQ) support for skew compensation, HSTL-compatible 165-ball FBGA package, and synchronous self-timed write capability in high-speed packet buffering systems.

Technical Context

The CY7C1413JV18 implements QDR-II architecture with physically separate read and write data paths, eliminating bus turnaround overhead. Its 18-bit bidirectional data width (D[17:0]/Q[17:0]) operates with 19 address lines (A[18:0]), supporting 512K × 18 internal array segmentation across four banks.

It uses two independent clock domains: K/K for address/data capture and C/C for output timing, with CQ/CQ echo clocks synchronized to C/C for precise source-synchronous data capture. The integrated DLL enables 1.5-cycle read latency at 300 MHz; disabling DOFF reverts operation to QDR-I mode (1-cycle latency, ≤167 MHz).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (2M × 18 organization)
Maximum Clock Frequency 300 MHz - enables 600 MT/s effective bandwidth via DDR on both ports
Read Latency 1.5 cycles (DLL enabled); 1 cycle (DLL disabled) - directly impacts pipeline depth in switch fabric buffers
Supply Voltages VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) - requires dual-rail power design with tight regulation
Interface Standard HSTL Class I - mandates controlled-impedance PCB routing and ZQ calibration for signal integrity
Package 165-ball FBGA (15 × 17 × 1.4 mm) - supports high-density routing with 0.8 mm ball pitch
Timing Architecture Separate K/K (input) and C/C (output) clocks - allows independent skew management for address vs. data paths

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input Latched on rising edge of K/K; supports byte-level write masking via BWS[1:0]
Q[17:0] Synchronous read data output Driven on rising edge of C/C; tri-stated when RPS is deasserted
A[18:0] Multiplexed address input Shared by read/write ports; latched on alternating edges of K clock for burst addressing
RPS / WPS Active-low port select Enables independent depth expansion; controls port arbitration without external logic
C / C, CQ / CQ Output clock & echo clock pair Source-synchronous timing reference for controller; CQ/CQ track flight time for deskew
ZQ Impedance calibration input Connects to external resistor to ground to tune Q[17:0]/CQ/CQ output drive strength to 0.2×RQ
DOFF DLL disable control Pull low to disable DLL and operate in QDR-I mode (≤167 MHz, 1-cycle latency)
TCK/TMS/TDI/TDO JTAG 1149.1 test interface Enables boundary scan testing and in-system programming of configuration registers

Key Features

Feature Design Value
Independent read/write ports Eliminates data bus turnaround delay, enabling full-duplex 600 MT/s throughput in packet buffering
Burst-4 sequential access Reduces address bus toggling frequency by 4× versus single-word access, lowering EMI and routing complexity
Echo clock (CQ/CQ) support Enables controller-side deskew of read data across multiple devices on same bus, critical for multi-chip buffer stacks
Variable-drive HSTL outputs ZQ-calibrated drive strength ensures consistent signal integrity across voltage/temperature variations
Synchronous self-timed writes Removes external write pulse timing constraints; internal timing guarantees reliable write completion per cycle
DLL-enabled 1.5-cycle latency Minimizes pipeline stalls in high-frequency switch ASIC interfaces while maintaining deterministic timing

Applications

Network Packet Buffer Telecom Line Card Memory

Use Scenario: High-speed Ethernet switch fabric requiring concurrent ingress/egress packet buffering at 10 Gbps+ line rates.

IC Role / Device Role / Timing Role: Dedicated SRAM buffer with independent read/write ports servicing parallel packet classification and forwarding engines.

Use Value: 600 MT/s DDR bandwidth and burst-4 access reduce memory controller overhead by 75% versus SDR SRAM, enabling real-time packet queuing without head-of-line blocking.

Use Scenario: Multi-service access gateway handling simultaneous TDM, ATM, and IP traffic with strict jitter tolerance.

IC Role / Device Role / Timing Role: Low-latency shared memory for time-slot interchange (TSI) and cell/packet reassembly buffers.

Use Value: 1.5-cycle DLL latency and echo clock alignment ensure sub-nanosecond skew control across 16+ memory devices, meeting ITU-T G.823 jitter specs.

Baseband Processing Buffer High-Frequency Trading Engine

Use Scenario: LTE/5G baseband unit requiring real-time FFT/IFFT result storage between processing stages.

IC Role / Device Role / Timing Role: Burst-access scratchpad memory interfacing with FPGA-based DSP pipelines using source-synchronous C/C clocks.

Use Value: CQ/CQ echo clocks enable FPGA IDELAYCTRL to dynamically compensate for PVT drift, maintaining setup/hold margins over temperature range.

Use Scenario: Ultra-low-latency market data feed handler where microseconds determine trade execution priority.

IC Role / Device Role / Timing Role: Deterministic latency SRAM for order book snapshot caching and tick-to-trade timestamping buffers.

Use Value: DLL-off mode provides guaranteed 1-cycle read latency at 167 MHz, delivering worst-case 6 ns access time for time-critical price updates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-Mbit QDR-II+, 250 MHz max, 1.5V core, supports 2-cycle latency only Lacks DLL bypass mode; no DOFF pin - cannot emulate QDR-I timing behavior Select when system requires higher reliability qualification (industrial temp, AEC-Q200 option) but tolerates fixed latency
ISSI IS61WV102418B 18-Mbit sync SRAM, 166 MHz, single-port, 3.3V/2.5V, no DDR or echo clocks No concurrent read/write; no source-synchronous timing - unsuitable for >200 MT/s burst applications Select only for cost-sensitive, non-burst, low-bandwidth control-plane memory where QDR-II features are unused

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1413JV18 uniquely supports DLL-on/off mode switching, echo clock deskew, and true dual-port DDR - making it the only viable choice for systems requiring both peak 300 MHz bandwidth and fallback to deterministic 1-cycle latency.

Availability

CY7C1413JV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffers, and high-frequency trading engines requiring stable component supply across extended product lifecycles.

Supply support for CY7C1413JV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

CY7C1413JV18 belongs to the QDR-II SRAM product line, engineered specifically for deterministic-latency, high-throughput data buffering in packet-switched infrastructure where concurrent read/write bandwidth and source-synchronous timing are mandatory.

FAQ

What is the minimum supported clock frequency for CY7C1413JV18?

The device has no specified minimum clock frequency; it operates down to DC. All timing parameters scale linearly with clock period, and the DLL remains functional across the full 300 MHz to static operation range. System-level hold time requirements must be verified at low frequencies using the AC timing table's tH and tSU specifications.

Can CY7C1413JV18 be used with only a single clock (K) instead of differential K/K?

Yes - the device supports single-ended clocking on K only. In this mode, K is ignored, and all inputs (address, data, controls) are sampled on K's rising edge. Output timing defaults to K for Q[17:0], and C/C must still be provided for read data strobing; CQ/CQ remain active and referenced to C.

How does ZQ calibration affect signal integrity in high-speed layouts?

ZQ calibration adjusts output driver impedance to match the PCB trace impedance (typically 50 Ω). With ZQ tied to a 50 Ω resistor to ground, Q[17:0] and CQ/CQ outputs achieve 0.2 × 50 Ω = 10 Ω driver impedance, enabling proper series termination and reducing reflections on point-to-point HSTL buses up to 600 MT/s.

Is JTAG accessible during normal memory operation?

Yes - the TAP controller operates independently of memory access. JTAG signals (TCK/TMS/TDI/TDO) are sampled asynchronously and do not interfere with K/K or C/C timing domains. Boundary scan testing can be performed without halting data traffic, supporting in-system diagnostics in live network equipment.

CY7C1413JV18-300BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1413JV18-300BZC FAQ

1.How can I place an order for CY7C1413JV18-300BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1413JV18-300BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1413JV18-300BZC reliable?

The price and inventory of CY7C1413JV18-300BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1413JV18-300BZC is usually 5 days.

3.What payment methods are accepted for CY7C1413JV18-300BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1413JV18-300BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1413JV18-300BZC?

CY7C1413JV18-300BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1413JV18-300BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1413JV18-300BZC?

For technical support, including CY7C1413JV18-300BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1413JV18-300BZC requirements.

6.How does Aetrix verify that CY7C1413JV18-300BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1413JV18-300BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1413JV18-300BZC meets industry standards.

7.What is the process for return or replacement of CY7C1413JV18-300BZC?

All CY7C1413JV18-300BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1413JV18-300BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1413JV18-300BZC part is unused and in its original packaging.

Return procedure for CY7C1413JV18-300BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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