Infineon Technologies CY7C1413KV18-250BZCT

Overview

CY7C1413KV18-250BZCT from Cypress Semiconductor is a 2 M × 18, 36-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (40 ns clock period), 1.8 V core supply, and 1.4–1.8 V I/O supply. It supports concurrent read/write transactions via independent ports and delivers 3.6 Gbps bandwidth using DDR interfaces on both ports.

For engineers reviewing the CY7C1413KV18-250BZCT datasheet, CY7C1413KV18-250BZCT pinout, CY7C1413KV18-250BZCT application, or CY7C1413KV18-250BZCT equivalent, key selection criteria include 1.5-cycle read latency (DOFF = HIGH), echo clocks (CQ/CQ) for timing margin, 165-ball FBGA package compatibility, and HSTL-15/18 I/O drive support in high-speed packet buffering systems.

Technical Context

The CY7C1413KV18-250BZCT implements a synchronous pipelined QDR II architecture with physically separate read and write data paths, eliminating bus turnaround delays. It uses dual input clocks (K/K) for address/data capture and dual output clocks (C/C) with echo clocks (CQ/CQ) to compensate for PCB flight time skew.

Internally, it organizes memory as four 512 K × 18 arrays, latching addresses on alternating rising edges of K, supporting 18-bit wide data bursts of four words per access. The PLL ensures precise data placement relative to C/C edges, and DOFF pin configures read latency between 1-cycle (LOW) and 1.5-cycle (HIGH) modes.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant, ball pitch 0.8 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with AS7C362000B-250BIN and MT47H64M16HR-25E:H, the CY7C1413KV18-250BZCT uniquely delivers guaranteed 1.5-cycle latency with echo-clock–assisted capture, making it optimal for systems requiring sub-2-ns timing margin and zero-refresh deterministic access.

Availability

CY7C1413KV18-250BZCT is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based protocol acceleration, and telecom baseband processing requiring stable component supply and long-term industrial availability.

Supply support for CY7C1413KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

The QDR II SRAM product line targets deterministic, low-latency, high-bandwidth memory subsystems in infrastructure equipment where DDR SDRAM latency and refresh overhead are unacceptable.

FAQ

What is the function of the DOFF pin on CY7C1413KV18-250BZCT?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in high-speed systems; when LOW, it selects 1-cycle latency for minimal access delay. This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed.

Does CY7C1413KV18-250BZCT require an external PLL or clock synthesizer?

No. The device integrates an internal PLL that locks to the K clock and generates phase-aligned internal clocks for precise data placement. External clock synthesis is unnecessary - only clean, low-jitter K, K, C, and C signals must be provided from the system controller or FPGA.

Can CY7C1413KV18-250BZCT operate with 1.5 V I/O supply while maintaining 1.8 V core voltage?

Yes. The device supports independent I/O supply (VDDQ = 1.4–1.8 V) and core supply (VDD = 1.8 V ±0.1 V). Operating at VDDQ = 1.5 V enables HSTL-15 compatibility with FPGAs like Xilinx Kintex-7, while retaining full 250 MHz performance and signal integrity.

How does the BWS[1:0] signal differ from standard byte enables in asynchronous SRAMs?

BWS[1:0] are synchronous, clocked byte write selects sampled on the rising edge of K/K alongside D[17:0]. Each controls a 9-bit segment (BWS0 → D[8:0], BWS1 → D[17:9]), enabling partial writes without read-modify-write cycles. Unlike asynchronous enables, they guarantee atomicity and timing alignment with the write clock domain.