Infineon Technologies CY7C1413KV18-250BZXC

Overview

CY7C1413KV18-250BZXC from Cypress Semiconductor is a 2 M × 18, 36-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (40 ns clock period), 1.8 V core supply, and 1.4–1.8 V I/O supply. It supports concurrent read/write operations via independent ports and delivers 3.6 Gbps bandwidth using DDR interfaces on both ports. Used in high-speed packet buffering for network line cards and telecom switching fabric.

For engineers reviewing the CY7C1413KV18-250BZXC datasheet, CY7C1413KV18-250BZXC pinout, CY7C1413KV18-250BZXC application, or CY7C1413KV18-250BZXC equivalent, key selection criteria include 1.5-cycle read latency (DOFF = HIGH), echo clock (CQ/CQ) support for timing margin, 165-ball FBGA package compatibility, and HSTL-18 I/O compliance with 1.4 V VDDQ operation.

Technical Context

This QDR II SRAM implements dual-clock synchronous pipelined architecture: K/K clocks control address/data latching on write port, while C/C clocks govern output register timing on read port. The device uses internal PLL to align echo clocks (CQ/CQ) with data edges, enabling reliable capture at 666 Mbps DDR rates without external delay compensation.

It features separate RPS/WPS controls for depth expansion, byte-write select (BWS[1:0]) for 18-bit word granularity, and DOFF pin to toggle between 1-cycle (LOW) and 1.5-cycle (HIGH) read latency modes. All inputs are registered on rising K/K edges; all outputs are edge-aligned to rising C/C edges.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L10BG and IS61QW25636A-250BQ, CY7C1413KV18-250BZXC uniquely delivers 250 MHz operation with 2 M × 18 organization and native HSTL-18 I/O - making it optimal for cost-sensitive, space-constrained telecom buffer designs requiring precise 1.5-cycle latency control.

Availability

CY7C1413KV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric, baseband processing memory, and test equipment data capture requiring stable component supply and long-term industrial lifecycle support.

Supply support for CY7C1413KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

CY7C1413KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in high-speed communications infrastructure.

FAQ

What is the function of the DOFF pin on CY7C1413KV18-250BZXC?

The DOFF (Data Output OFFset) pin selects read latency mode: when HIGH, it configures 1.5-cycle latency for improved timing margin in high-speed systems; when LOW, it enables 1-cycle latency for minimal access delay. This setting directly affects the number of clock cycles between address assertion and valid Q[17:0] output, and must be set before initialization.

Can CY7C1413KV18-250BZXC operate with VDDQ = 1.4 V while maintaining full speed?

Yes - the device is fully specified for 1.4 V VDDQ operation at 250 MHz. HSTL-18 I/O buffers are characterized across 1.4–1.8 V, and all AC timing parameters (including tAC, tCO, tHZ) meet datasheet limits at 1.4 V. No derating is required, but VREF must be set to 0.7 × VDDQ = 0.98 V.

How does the ZQ pin function during system operation?

ZQ connects to a 240 Ω precision resistor to ground and initiates on-die impedance calibration at power-up and optionally during runtime. It adjusts output driver strength and on-die termination to maintain 40–60 Ω match across process/voltage/temperature - critical for signal integrity on 666 Mbps DDR buses.

Is JTAG boundary scan supported during normal memory operation?

Yes - IEEE 1149.1 boundary scan operates independently of memory functionality. TAP signals (TCK, TMS, TDI, TDO) are asynchronous and do not interfere with K/K, C/C, or data transactions. Scan operations can be performed in-system without halting memory access or resetting the device.