Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1413KV18-250BZXI

Part No.:
CY7C1413KV18-250BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1413KV18-250BZXI.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,484

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1413KV18-250BZXI from Cypress Semiconductor is a 2 M × 18, 36-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (40 ns clock period), 1.8 V core supply, and 1.4–1.8 V I/O supply. It supports concurrent read/write operations via independent ports, delivers 666 MT/s effective data rate using DDR interfaces on both ports, and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm) for high-density networking memory buffers.

For engineers reviewing the CY7C1413KV18-250BZXI datasheet, CY7C1413KV18-250BZXI pinout, CY7C1413KV18-250BZXI application, or CY7C1413KV18-250BZXI equivalent, key selection criteria include 1.5-cycle read latency (DOFF = HIGH), echo clocks (CQ/CQ) for timing margin recovery, JTAG 1149.1 test access, and HSTL-compatible variable-drive outputs for signal integrity in backplane and packet-switching systems.

Technical Context

This QDR II SRAM implements separate synchronous read and write ports sharing a multiplexed address bus, with address latching on alternate rising edges of K/K clocks. Internal self-timed writes eliminate external write pulse timing constraints, while dual output clocks (C/C) and echo clocks (CQ/CQ) decouple data capture timing from board flight time mismatches.

The device uses a PLL to align output data edges precisely with C/C clock transitions, enabling reliable 666 MT/s operation. Read latency is configurable: 1 cycle when DOFF = LOW (QDR I compatibility mode) or 1.5 cycles when DOFF = HIGH - a hardware-selectable trade-off between latency and setup/hold margin at full speed.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density36 Mbit (2 M × 18 organization)
Max Clock Frequency250 MHz (40 ns period); enables 666 MT/s DDR throughput per port
Read Latency1.5 cycles (DOFF = HIGH) - ensures timing closure at 250 MHz with echo-clock capture
Core Supply Voltage1.8 V ±0.1 V - defines internal logic and array operating point
I/O Supply Range1.4 V to 1.8 V - supports HSTL-15/18 and interoperability with 1.5 V or 1.8 V ASIC/FPGA interfaces
Burst LengthFour-word burst - reduces address bus toggling by 75% vs. single-word access
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in telecom line cards

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, Pb-free (BZXI suffix).

Pin/TerminalCircuit RoleDesign Meaning
D[17:0]Write data inputs18-bit synchronous input bus sampled on rising edge of K clock; supports byte-write via BWS[1:0]
Q[17:0]Read data outputs18-bit DDR output bus driven on rising edges of C/C clocks; echo-aligned with CQ/CQ
A[18:0]Multiplexed address inputs19-bit address bus shared by read/write ports; latched on alternating K clock edges
WPSWrite port selectActive-low synchronous enable for write transactions; deassertion blocks D[17:0] acceptance
RPSRead port selectActive-low synchronous enable for read transactions; deassertion forces Q[17:0] to high-impedance
BWS[1:0]Byte write selectsTwo active-low signals controlling 9-bit byte groups: BWS0 → D[8:0], BWS1 → D[17:9]
CQ, CQEcho clocksOutput-delayed copies of C/C clocks; used by controller to latch Q[17:0] with zero skew
K, KInput clocksDifferential pair driving all synchronous inputs; only rising edges used for register sampling
C, COutput clocksDifferential pair governing Q[17:0] and CQ/CQ timing; phase-aligned to data edges via internal PLL
DOFFRead latency controlStatic input selecting 1-cycle (LOW) or 1.5-cycle (HIGH) read latency mode

Key Features

FeatureDesign Value
Independent read/write portsEnables full-duplex memory access - no bus turnaround required, doubling effective bandwidth vs. common-I/O SRAMs
Four-word burst architectureReduces address bus frequency by 4×, lowering routing complexity and EMI in high-speed PCB layouts
Echo clock (CQ/CQ) supportEliminates need for precise board-level clock-to-data skew matching - simplifies layout and improves timing margin
JTAG 1149.1 boundary scanEnables production test and debug of interconnect integrity without physical probe access
Variable-drive HSTL outputsAllows impedance tuning to match trace characteristics - critical for maintaining signal integrity at 666 MT/s

Applications

Packet Buffer in 10G Ethernet Switch ASICLine Card Memory for Optical Transport (OTN)

Use Scenario: Stores ingress/egress packet headers and metadata in a multi-port switch fabric where simultaneous read (forwarding decision) and write (packet arrival) must occur without contention.

IC Role / Device Role / Timing Role: Dual-port QDR II SRAM acting as low-latency, high-throughput buffer between MAC and switching core; CQ/CQ clocks synchronize FPGA capture logic.

Use Value: 1.5-cycle latency + echo clocks guarantee setup/hold compliance at 250 MHz, enabling deterministic 666 MT/s throughput per port without dynamic calibration.

Use Scenario: Buffers OTU2/OTU3 frame payloads in DWDM line cards, absorbing jitter between upstream framer and downstream mapper under varying traffic loads.

IC Role / Device Role / Timing Role: High-reliability, temperature-stable SRAM providing burst-mode storage with full data coherency across concurrent read/write streams.

Use Value: 1.8 V core + 1.4–1.8 V I/O supports mixed-voltage system integration; 165-ball FBGA meets IPC-7351 density requirements for compact line card designs.

Backplane Interposer Memory for AI AcceleratorReal-Time Video Frame Buffer in Broadcast Encoder

Use Scenario: Serves as scratchpad memory between two high-bandwidth AI processor tiles communicating over a chiplet interconnect, requiring zero-wait-state bidirectional data exchange.

IC Role / Device Role / Timing Role: Deterministic-latency SRAM interfaced to SerDes-adjacent FPGA logic; DOFF = HIGH configures 1.5-cycle latency for robust timing closure.

Use Value: Four-word burst minimizes address bus toggling - reducing simultaneous switching noise (SSN) critical near sensitive analog SerDes lanes.

Use Scenario: Holds uncompressed 4K video frames during real-time color space conversion and compression in broadcast-grade encoder hardware.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer supporting parallel read (processing pipeline) and write (sensor interface) at 60 fps with no frame drop.

Use Value: Independent ports prevent read/write arbitration stalls; 2 M × 18 organization matches 16-bit pixel bus width, eliminating packing/unpacking overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1413KV18-300BZXIHigher max frequency (300 MHz), higher operating current (470 mA @ ×18), identical pinout and feature setRequires tighter timing closure and higher power delivery; suitable only if system clock budget allows >250 MHzSelect when design requires >250 MHz bandwidth and can accommodate increased thermal load
AS7C362000B-250BINQDR II+ (not QDR II), adds programmable latency and enhanced DLL; different pinout (165-ball but non-interchangeable), no JTAGSupports adaptive latency tuning and higher reliability features (ECC option), but requires PCB redesignChoose for next-gen systems needing field-programmable latency or extended lifecycle support beyond Cypress' discontinuation path

Compared with CY7C1413KV18-300BZXI, this -250BZXI variant trades 50 MHz bandwidth for lower power (470 mA → 460 mA) and relaxed timing margins; versus AS7C362000B-250BIN, it offers proven JTAG testability and pin-compatible drop-in replacement within existing Cypress-based designs, but lacks QDR II+ enhancements.

Availability

CY7C1413KV18-250BZXI is available at Aetrix Electronics and suitable for 10G/25G Ethernet switch buffers, optical transport network (OTN) line cards, AI chiplet interposers, and broadcast video encoders requiring stable component supply across multi-year production cycles.

Supply support for CY7C1413KV18-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

This device belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory buffering in high-speed packet processing and real-time video infrastructure.

FAQ

What is the function of the DOFF pin on CY7C1413KV18-250BZXI?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle latency for improved timing margin at 250 MHz; when LOW, it enables 1-cycle latency compatible with legacy QDR I timing. This is a static configuration pin sampled at power-up and cannot be changed dynamically during operation.

Can CY7C1413KV18-250BZXI operate with only one clock domain (K = C)?

Yes - the device supports single-clock mode where K and C are tied together (and K and C likewise). In this configuration, all inputs and outputs are synchronized to the same clock pair, simplifying clock tree design at the cost of reduced timing flexibility. Echo clocks (CQ/CQ) remain functional for data capture alignment.

What does "BZXI" in the part number signify?

The "BZXI" suffix indicates a 165-ball FBGA package (B), lead-free (Z), industrial temperature range (−40°C to +85°C) (I), and tape-and-reel packaging (X). It confirms RoHS compliance, extended thermal rating, and automated assembly readiness - critical for telecom and industrial deployments.

How is depth expansion implemented using port selects?

Depth expansion is achieved by cascading multiple CY7C1413KV18 devices using RPS (Read Port Select) and WPS (Write Port Select) signals. Each device's RPS/WPS is driven by decoded higher-order address bits, enabling independent enablement of read/write ports across the bank while sharing A[18:0], D[17:0], and Q[17:0] buses - preserving full concurrency across the expanded memory space.

CY7C1413KV18-250BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1413KV18-250BZXI FAQ

1.How can I place an order for CY7C1413KV18-250BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1413KV18-250BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1413KV18-250BZXI reliable?

The price and inventory of CY7C1413KV18-250BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1413KV18-250BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1413KV18-250BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1413KV18-250BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1413KV18-250BZXI?

CY7C1413KV18-250BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1413KV18-250BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1413KV18-250BZXI?

For technical support, including CY7C1413KV18-250BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1413KV18-250BZXI requirements.

6.How does Aetrix verify that CY7C1413KV18-250BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1413KV18-250BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1413KV18-250BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1413KV18-250BZXI?

All CY7C1413KV18-250BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1413KV18-250BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1413KV18-250BZXI part is unused and in its original packaging.

Return procedure for CY7C1413KV18-250BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1413KV18-250BZXI Tags

  • CY7C1413KV18-250BZXI
  • CY7C1413KV18-250BZXI PDF
  • CY7C1413KV18-250BZXI Datasheet
  • CY7C1413KV18-250BZXI Specifications
  • CY7C1413KV18-250BZXI Images
  • Infineon Technologies
  • Infineon Technologies CY7C1413KV18-250BZXI
  • Buy CY7C1413KV18-250BZXI
  • CY7C1413KV18-250BZXI Price
  • CY7C1413KV18-250BZXI Distributor
  • CY7C1413KV18-250BZXI Supplier
  • CY7C1413KV18-250BZXI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER