Infineon Technologies CY7C1413KV18-300BZCT

Overview

CY7C1413KV18-300BZCT from Cypress Semiconductor is a 2 M × 18, 36-Mbit QDR® II SRAM with four-word burst architecture, 300 MHz clock operation (600 MHz DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply - deployed in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1413KV18-300BZCT datasheet, CY7C1413KV18-300BZCT pinout, CY7C1413KV18-300BZCT application, or CY7C1413KV18-300BZCT equivalent, key selection criteria include read latency mode (DOFF-controlled), echo clock timing margin, HSTL-15/18 output drive compatibility, and 165-ball FBGA (13 × 15 × 1.4 mm) board layout constraints.

Technical Context

This QDR II SRAM implements fully independent read and write ports with separate address latching on alternating K-clock edges, enabling true concurrent transactions without bus turnaround. It uses dual input clocks (K/K̄) for DDR write timing and dual output clocks (C/C̄) plus echo clocks (CQ/CQ̄) to align data capture at the receiver.

The device integrates a PLL for precise internal data placement, supports programmable impedance via ZQ pin, and features synchronous self-timed writes with full data coherency. Read latency is configurable: 1 cycle when DOFF = LOW (QDR I mode) or 1.5 cycles when DOFF = HIGH (QDR II mode).

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T36125L10BG and IS61WV102418B, CY7C1413KV18-300BZCT delivers 20% higher bandwidth, integrated echo clock timing, and programmable impedance - making it the sole option for new 300 MHz+ QDR II switch fabric designs requiring guaranteed data coherency.

Availability

CY7C1413KV18-300BZCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffers, and test equipment pattern memory requiring stable component supply across multi-year production cycles.

Supply support for CY7C1413KV18-300BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

CY7C1413KV18 belongs to the QDR® II SRAM product line - engineered specifically for deterministic, low-latency, concurrent-read-write memory subsystems in packet-switched infrastructure.

FAQ

What is the function of the DOFF pin on CY7C1413KV18-300BZCT?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle QDR II latency for optimized burst efficiency; when LOW, it reverts to 1-cycle QDR I latency for minimal pipeline delay. This setting directly affects the number of clock cycles between address assertion and valid Q[17:0] output, and must be set before initialization completes.

How does the ZQ pin enable impedance calibration?

The ZQ pin connects to a 240 Ω ±1% external resistor to ground, allowing the device to calibrate its HSTL output drivers to match 50 Ω transmission lines. Calibration occurs automatically during power-up and can be triggered manually via JTAG. This eliminates need for external series termination resistors and improves signal integrity across varying PCB stackups.

Can CY7C1413KV18-300BZCT operate with only a single clock domain?

Yes - the device supports single-clock mode where K and C clocks are tied together (and K̄/C̄ similarly), simplifying system clocking. In this mode, data is sampled and driven on the same clock edges, but echo clock (CQ) functionality remains active for receiver timing alignment. Maximum frequency drops to 250 MHz in single-clock configuration per datasheet specifications.

What is the purpose of BWS[1:0] pins in a 2 M × 18 configuration?

BWS[1:0] are active-low byte write select signals that enable partial-word writes: BWS0 controls D[8:0] (first 9 bits), BWS1 controls D[17:9] (second 9 bits). When either is deasserted, the corresponding 9-bit segment retains its prior value - essential for updating specific fields within a 18-bit packet header without overwriting adjacent data.