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Infineon Technologies CY7C1413KV18-300BZXC

Part No.:
CY7C1413KV18-300BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1413KV18-300BZXC.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,616

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Product details

Overview

CY7C1413KV18-300BZXC from Cypress Semiconductor is a 2 M × 18, 36-Mbit QDR® II SRAM with four-word burst architecture, 300 MHz clock operation (600 MHz DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, echo clocks (CQ/CQ), and programmable DOFF for 1-cycle or 1.5-cycle read latency-used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1413KV18-300BZXC datasheet, CY7C1413KV18-300BZXC pinout, CY7C1413KV18-300BZXC application, or CY7C1413KV18-300BZXC equivalent, key selection criteria include QDR II burst timing compliance, FBGA-165 package compatibility, dual-clock domain synchronization (K/K and C/C), and 18-bit wide synchronous interface support for telecom line card memory subsystems.

Technical Context

This SRAM implements true QDR II architecture with physically independent read and write data paths, eliminating bus turnaround overhead. It uses two rising-edge-triggered input clocks (K and K) for address/data latching and two output clocks (C and C) for synchronized data capture-enabling concurrent read/write operations at full bandwidth.

The device integrates an on-chip PLL for precise data-eye placement and supports both single-clock mode (K = C) and dual-clock mode. Its 19-bit address bus accesses a 2 M × 18 memory array organized as four 512 K × 18 banks, with BWS[1:0] enabling byte-selective writes to D[17:0].

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (2 M × 18 organization)
Max Clock Frequency 300 MHz - sets maximum sustained transaction rate of 600 MT/s (DDR)
Burst Length Four-word burst - reduces address bus toggling frequency by 4× vs. single-word access
Read Latency Selectable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - enables timing optimization per system clock phase alignment
Supply Voltages VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) - supports mixed-voltage system integration with 1.5 V or 1.8 V interfaces
Package 165-ball FBGA (13 × 15 × 1.4 mm) - industry-standard footprint for high-pin-count, high-speed memory placement
Interface Standard HSTL Class I compatible outputs - ensures signal integrity at 600 Mbps per pin with controlled drive strength

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data inputs Latched on rising edge of K clock; 18-bit parallel data path for burst writes
Q[17:0] Synchronous read data outputs Driven on rising edge of C clock; provides 18-bit burst-read data aligned to echo clock CQ
K / K Input clocks (read/write) Dual-phase clocks for address/data capture; K used for read port, K for write port in dual-clock mode
C / C Output clocks (read) Source-synchronous clocks for Q[17:0]; minimize skew between data and capture clock in high-speed receivers
CQ / CQ Echo clocks Delayed copies of C/C; simplify PCB layout and timing closure by matching flight time to data signals
BWS[1:0] Byte write select inputs Active-low controls for D[8:0] (BWS0) and D[17:9] (BWS1); enable partial-word writes without read-modify-write
RPS / WPS Port select inputs Active-low enables independent read/write port activation - essential for depth expansion across multiple devices
DOFF Read latency control High = 1.5-cycle latency (for tighter setup/hold margins); Low = 1-cycle latency (maximizes throughput)

Key Features

Feature Design Value
Separate read/write data ports Enables true concurrent read and write transactions - no bus arbitration or turnaround delay required
Four-word burst architecture Reduces effective address bus frequency by 75%, lowering routing complexity and EMI in dense PCB layouts
Programmable read latency (DOFF) Allows dynamic adaptation to system timing margin constraints - critical for multi-vendor PHY-to-memory interconnects
HSTL Class I output drivers Variable drive strength configurable via ZQ calibration - matches trace impedance for clean 600 Mbps signaling
JTAG 1149.1 boundary scan Supports IEEE-compliant production test and in-system diagnostics without additional test fixtures

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/40G Ethernet switch ASICs.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer interfacing directly to SerDes MAC logic.

Use Value: Concurrent read/write capability eliminates pipeline stalls during back-to-back packet processing, sustaining >90% memory bandwidth utilization.

Use Scenario: Frame buffering in OTN/framer-based optical transport equipment with strict jitter tolerance.

IC Role / Device Role / Timing Role: Synchronous memory subsystem synchronized to line-rate clocks (e.g., 622 MHz OC-48).

Use Value: Echo clocks (CQ/CQ) and PLL-aligned outputs ensure sub-100 ps data valid window - meeting SONET/SDH jitter compliance.

Baseband Processing Cache Test Equipment Pattern Memory

Use Scenario: Real-time L1/L2 cache for FPGA-based LTE/5G baseband processors handling uplink/downlink scheduling.

IC Role / Device Role / Timing Role: Burst-access scratchpad memory co-located with DSP engines for channel estimation and FFT buffers.

Use Value: 18-bit width matches typical complex-sample word size; four-word burst aligns with OFDM symbol payload granularity.

Use Scenario: High-speed digital pattern storage in ATE systems generating multi-Gbps stimulus vectors.

IC Role / Device Role / Timing Role: Deterministic-access memory delivering repeatable 600 MT/s waveform playback to pin electronics.

Use Value: 1-cycle read latency (DOFF = LOW) guarantees fixed, zero-jitter output timing - essential for parametric test repeatability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L5PF 36-Mbit QDR II+, 333 MHz max, 1.5 V core, 165-ball FBGA - higher speed grade but requires 1.5 V core (not 1.8 V) Requires redesign of core power delivery; not drop-in compatible due to VDD mismatch and different BWS encoding Choose only if system already uses 1.5 V core rails and needs marginal bandwidth uplift beyond 300 MHz
ISSI IS61QW25636A-300BQ 256K × 36 QDR II, 300 MHz, 1.8 V core, 165-ball FBGA - same speed/package but 18-Mbit density (half capacity) Insufficient depth for 2 M × 18 applications; requires two devices for equivalent capacity with added interleave complexity Select only for space-constrained designs where 18-Mbit capacity suffices and board area favors single-device layout

Compared with IDT72T3615L5PF and IS61QW25636A-300BQ, CY7C1413KV18-300BZXC uniquely delivers 36-Mbit density at 1.8 V core in a pin-compatible FBGA-165 package - avoiding voltage rail redesign or capacity splitting while maintaining QDR II timing compliance.

Availability

CY7C1413KV18-300BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and test equipment pattern memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C1413KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1413KV18 belongs to Cypress's QDR II SRAM product line, designed specifically for deterministic, high-bandwidth memory subsystems in networking and telecom infrastructure where concurrent access and precise timing control are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1413KV18-300BZXC?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle latency for relaxed timing margins; when LOW, it enables 1-cycle latency for maximum throughput. This setting directly affects the number of clock cycles between address assertion and valid Q[17:0] output, and must be held stable during operation - it is not dynamically switchable mid-burst.

Can CY7C1413KV18-300BZXC operate in single-clock mode?

Yes - by tying K = C and K = C, the device operates in single-clock mode where one clock drives both address/data capture and output timing. In this configuration, echo clocks CQ/CQ remain functional but track the single clock, simplifying system clock tree design at the cost of reduced flexibility in read/write timing skew management.

What is the purpose of BWS[1:0] pins?

BWS[1:0] are active-low byte write select inputs that enable partial-word writes: BWS0 controls D[8:0], BWS1 controls D[17:9]. When either is deasserted, the corresponding 9-bit byte is ignored during write cycles - preserving existing data without requiring a read-modify-write sequence. This is essential for efficient header/metadata updates in packet processing.

Is JTAG boundary scan supported on CY7C1413KV18-300BZXC?

Yes - the device implements IEEE 1149.1 JTAG TAP controller with TDI, TDO, TCK, and TMS pins. It supports instruction register loading, boundary scan register access, and IDCODE readout. JTAG functionality is enabled by default at power-up and can be disabled via the TAP instruction register if unused - no external hardware modification is required.

CY7C1413KV18-300BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1413KV18-300BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1413KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1413KV18-300BZXC reliable?

The price and inventory of CY7C1413KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1413KV18-300BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1413KV18-300BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1413KV18-300BZXC transactions.

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CY7C1413KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1413KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1413KV18-300BZXC?

For technical support, including CY7C1413KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1413KV18-300BZXC requirements.

6.How does Aetrix verify that CY7C1413KV18-300BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1413KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1413KV18-300BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1413KV18-300BZXC?

All CY7C1413KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1413KV18-300BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1413KV18-300BZXC part is unused and in its original packaging.

Return procedure for CY7C1413KV18-300BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1413KV18-300BZXC Tags

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