Infineon Technologies CY7C1413KV18-333BZXI
- Part No.:
- CY7C1413KV18-333BZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1413KV18-333BZXI.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1413KV18-333BZXI from Cypress Semiconductor is a 2 M × 18, 36-Mbit QDR® II SRAM with four-word burst architecture, 333 MHz clock frequency, DDR interfaces on independent read/write ports (666 MHz data rate), and 1.8 V core / 1.4–1.8 V I/O supply - deployed in high-bandwidth packet buffering for telecom line cards.
For engineers reviewing the CY7C1413KV18-333BZXI datasheet, CY7C1413KV18-333BZXI pinout, CY7C1413KV18-333BZXI application, or CY7C1413KV18-333BZXI equivalent, key selection criteria include 1.5-cycle read latency (DOFF = HIGH), echo clock (CQ/CQ) support for timing margin, 165-ball FBGA package compatibility, and synchronous self-timed write capability.
Technical Context
The CY7C1413KV18-333BZXI implements QDR II architecture with physically separate read and write data paths, eliminating bus turnaround delays. It uses dual input clocks (K/K) for address/data latching and dual output clocks (C/C) with echo clocks (CQ/CQ) to compensate for PCB flight time skew.
Internally, it organizes memory as four 512 K × 18 arrays, accepts 19-bit addresses (A[18:0]), supports byte-write via BWS[1:0], and delivers full data coherency with synchronous pipelined access. The integrated PLL ensures precise data placement relative to output clocks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2 M × 18 configuration) |
| Clock Frequency | 333 MHz - enables 666 MT/s effective data rate per port |
| Read Latency | 1.5 cycles (with DOFF = HIGH) - reduces pipeline stalls in burst-heavy systems |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) - supports 1.5 V or 1.8 V interface levels |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count SRAMs in dense PCB layouts |
| Interface Type | QDR II with independent DDR read/write ports - eliminates bidirectional bus contention |
| Write Mode | Synchronous self-timed writes - removes external write pulse timing constraints |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free (BZXI suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Write data inputs | 18-bit parallel data sampled on rising edge of K clock during active write |
| Q[17:0] | Read data outputs | 18-bit parallel data driven on rising edge of C/C clocks; echo-aligned with CQ/CQ |
| A[18:0] | Address inputs | 19-bit multiplexed address for both read/write ports; latched on K clock edges |
| WPS | Write port select | Active-low signal enabling write operations; deassertion disables D[17:0] sampling |
| BWS[1:0] | Byte write selects | Two active-low signals controlling which 9-bit bytes (D[8:0], D[17:9]) are written |
| CQ / CQ | Echo clocks | Output-synchronized copies of C/C clocks - simplify source-synchronous capture at FPGA/ASIC receiver |
| K / K | Input clocks | Dual-phase clocks for address/data latching; only rising edges used (no DDR clocking on inputs) |
| C / C | Output clocks | Dual-phase clocks driving Q[17:0]; paired with CQ/CQ for timing margin recovery |
| DOFF | Read latency control | High = 1.5-cycle latency; Low = 1-cycle latency - configures internal pipeline depth |
| VREF | Reference voltage | Provides HSTL-compatible reference for input threshold setting (VDDQ/2) |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write DDR ports | Enables concurrent read+write without bus arbitration or turnaround delay - critical for full-duplex packet buffers |
| Echo clock (CQ/CQ) support | Eliminates need for precise PCB trace length matching between clock and data lines - simplifies layout in >300 MHz designs |
| Programmable read latency (DOFF) | Allows runtime optimization between latency-sensitive (DOFF = LOW) and bandwidth-optimized (DOFF = HIGH) modes |
| Byte-selectable writes (BWS[1:0]) | Permits partial-word updates without read-modify-write cycles - preserves integrity in multi-threaded buffer management |
| JTAG 1149.1 boundary scan | Enables production testability and interconnect verification without additional test fixtures or probe points |
Applications
| Telecom Line Card Buffering | Network Processor Interface |
|---|---|
|
Use Scenario: Storing incoming/outgoing packet headers and payloads in OC-192/STM-64 line interface modules. IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory between SERDES and traffic manager ASICs. Use Value: 666 MT/s per port sustains full-duplex 10 Gbps line rates with zero bus turnaround overhead. |
Use Scenario: Acting as instruction/data cache between multi-core network processors and packet classification engines. IC Role / Device Role / Timing Role: Synchronous pipelined memory with deterministic 1.5-cycle read latency for real-time forwarding decisions. Use Value: Echo clocks (CQ/CQ) ensure reliable data capture at 333 MHz despite board-level skew across 18-bit buses. |
| Baseband Processing Memory | Test Equipment Pattern Storage |
|
Use Scenario: Holding uplink/downlink channel coefficients and FFT buffers in LTE/5G remote radio units. IC Role / Device Role / Timing Role: Dual-port SRAM interfacing with FPGA-based DSP pipelines using separate clock domains. Use Value: Independent K/K and C/C clocks allow optimal timing alignment between ADC/DAC controllers and processing logic. |
Use Scenario: Storing high-speed digital stimulus/response patterns in automated test equipment (ATE) channel cards. IC Role / Device Role / Timing Role: Deterministic-access memory with JTAG boundary scan for post-manufacture interconnect validation. Use Value: Self-timed writes eliminate external write strobe generation - simplifying pattern generator timing control logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L5 | 36-Mbit QDR II+, 500 MHz max clock, 1.5 V core, 165-ball FBGA - higher speed but tighter VDDQ tolerance (1.4–1.6 V) | Requires stricter power rail regulation; not drop-in due to different BWS pin mapping and no DOFF latency control | Select when system demands >333 MHz bandwidth and can accommodate revised power and control logic |
| ISSI IS61QW25636A-333B | 256K × 36 QDR II, 333 MHz, 1.8 V core, 165-ball FBGA - same density class but ×36 organization vs. ×18 | Requires wider data bus routing and different address decoding (18-bit A[17:0] vs. 19-bit A[18:0]) | Select for applications needing 36-bit native word width and compatible with 256K depth instead of 2 M depth |
Compared with IDT72T3615L5 and IS61QW25636A-333B, the CY7C1413KV18-333BZXI offers unique 2 M × 18 depth-width balance, flexible DOFF-configurable latency, and broader VDDQ range - making it optimal for depth-critical telecom buffering where 18-bit bus width aligns with common SerDes lane groupings.
Availability
CY7C1413KV18-333BZXI is available at Aetrix Electronics and suitable for telecom infrastructure, network processor interfacing, baseband processing, and high-speed test equipment requiring stable component supply and long-term obsolescence planning.
Supply support for CY7C1413KV18-333BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems, with focus on signal integrity and timing precision.
The QDR® II SRAM product line targets high-bandwidth, low-latency memory subsystems in networking and test equipment - emphasizing concurrent access, echo-clock timing robustness, and synchronous self-timed operation.
FAQ
What is the function of the DOFF pin on CY7C1413KV18-333BZXI?
The DOFF (Data Output OFFset) pin controls read latency mode: when asserted HIGH, it configures 1.5-cycle read latency for optimized bandwidth; when LOW, it enables 1-cycle latency for minimal delay. This is implemented via internal pipeline staging and affects timing closure requirements for downstream receivers.
Does CY7C1413KV18-333BZXI support single-ended clocking?
No - the device requires differential clock pairs (K/K and C/C) for proper operation, though only the rising edge of each clock is used. Single-ended drive is not supported; external termination and matched routing for both phases are mandatory to meet setup/hold timing.
How many address bits does CY7C1413KV18-333BZXI require?
It uses 19 address bits (A[18:0]) to access its 2 M × 18 memory array. These are multiplexed for both read and write ports and sampled synchronously on the rising edge of the K clock during active operations.
Can CY7C1413KV18-333BZXI operate with VDDQ = 1.5 V while VDD = 1.8 V?
Yes - the datasheet explicitly permits VDDQ in the range 1.4 V to VDD (1.8 V), so 1.5 V is fully compliant. This allows interoperability with 1.5 V logic families while maintaining 1.8 V core stability, and is commonly used in mixed-voltage FPGA interfaces.
CY7C1413KV18-333BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1413KV18-333BZXI FAQ
1.How can I place an order for CY7C1413KV18-333BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1413KV18-333BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1413KV18-333BZXI reliable?
The price and inventory of CY7C1413KV18-333BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1413KV18-333BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1413KV18-333BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1413KV18-333BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1413KV18-333BZXI?
CY7C1413KV18-333BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1413KV18-333BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1413KV18-333BZXI?
For technical support, including CY7C1413KV18-333BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1413KV18-333BZXI requirements.
6.How does Aetrix verify that CY7C1413KV18-333BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1413KV18-333BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1413KV18-333BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1413KV18-333BZXI?
All CY7C1413KV18-333BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1413KV18-333BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1413KV18-333BZXI part is unused and in its original packaging.
Return procedure for CY7C1413KV18-333BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1413KV18-333BZXI Tags

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STMicroelectronics
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Microchip Technology

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STMicroelectronics

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Microchip Technology

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