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Infineon Technologies CY7C1414AV18-167BZCT

Part No.:
CY7C1414AV18-167BZCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1414AV18-167BZCT.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,844

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Product details

Overview

CY7C1414AV18 from Cypress Semiconductor is a 1M × 36-bit (36-Mbit), 167 MHz QDR-II™ SRAM with separate read/write ports, DDR interfaces on both ports (500 MT/s effective data rate), and 1.8V core / 1.4–1.8V I/O supply. It implements synchronous pipelined burst architecture with two-word burst depth and supports concurrent read/write operations in high-bandwidth networking buffers and packet classification engines.

For engineers reviewing the CY7C1414AV18 datasheet, CY7C1414AV18 pinout, CY7C1414AV18 application, or CY7C1414AV18 equivalent, key selection criteria include its 19-bit address bus, 36-bit bidirectional data width, BWS[3:0] byte write control, DLL-enabled timing accuracy, and 165-ball FBGA package compatibility with high-speed PCB layout constraints.

Technical Context

The CY7C1414AV18 uses QDR-II architecture with physically independent read and write data paths-Q[35:0] outputs and D[35:0] inputs-eliminating bus turnaround overhead. Its dual-clock domain employs K/K for address/control latching and C/C for output timing, with echo clocks CQ/CQ referenced to C/C to compensate for flight-time skew in multi-device memory subsystems.

All synchronous inputs (RPS, WPS, BWS[3:0], A[18:0]) are registered on rising edges of K/K; all outputs (Q[35:0], CQ, CQ) are edge-aligned to C/C. Internal self-timed writes and DLL-based data placement ensure setup/hold compliance at 167 MHz, supporting deterministic latency across temperature and voltage ranges.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density36 Mbit (1M × 36 configuration)
Maximum Clock Frequency167 MHz - defines maximum sustained transaction rate of 167 million cycles/sec
Data Rate (DDR)334 MT/s per port - enables 334 million transfers/sec on read and write paths independently
Core Supply Voltage1.8 V ±0.1 V - powers internal logic and array; requires tight regulation for timing stability
I/O Supply Range1.4 V to 1.8 V - supports HSTL-compatible signaling with adjustable drive strength
Burst Length2-word - delivers two consecutive 36-bit words per access, optimizing bandwidth efficiency
Package165-ball FBGA (15 × 17 × 1.4 mm) - provides 0.8 mm ball pitch for high-density routing and thermal dissipation

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant lead-free option available.

Pin/Terminal Circuit Role Design Meaning
D[35:0]Synchronous write data inputLatched on rising edge of K clock; 36-bit parallel path for burst-write payload
Q[35:0]Synchronous read data outputDriven on rising edges of C/C clocks; tri-stated when RPS inactive
A[18:0]Multiplexed address input19-bit bus latched separately on K (read) and K (write) rising edges
RPSRead port selectActive-low signal enabling read access; initiates 2-word burst on next K edge
WPSWrite port selectActive-low signal enabling write access; gates D[35:0] and BWS[3:0] sampling
BWS[3:0]Byte write selectFour active-low signals controlling 36-bit write granularity: BWS0→D[8:0], BWS1→D[17:9], BWS2→D[26:18], BWS3→D[35:27]
K, KPositive/negative input clocksRising edges latch all synchronous inputs; K used for read address/control, K for write address/control
C, CPositive/negative output clocksRising edges clock Q[35:0] and CQ/CQ; enable deskew between memory and controller
CQ, CQEcho clocksFree-running outputs synchronized to C/C; simplify capture timing in FPGA/ASIC receivers
ZQImpedance calibration inputConnects to external resistor to ground to tune output driver impedance to system trace Z₀
DOFFDLL disableActive-low pin disabling internal Delay Lock Loop; alters AC timing parameters significantly
VDD, VSS, VDDQPower and groundVDD = 1.8 V core supply; VDDQ = 1.4–1.8 V I/O supply; VSS = common ground reference
VREFReference voltageStatic bias point for HSTL input thresholds and output swing centering
TCK/TMS/TDI/TDOJTAG boundary-scan interfaceIEEE 1149.1 compliant test access port for production testing and debug

Key Features

Feature Design Value
Separate read/write data portsEliminates bus turnaround delay and contention, enabling true concurrent access in full-duplex memory subsystems
2-word burst architectureDelivers two 36-bit words per clock cycle, doubling effective throughput versus single-word devices
Delay Lock Loop (DLL)Aligns internal data launch to output clock edges, ensuring sub-cycle timing margin at 167 MHz operation
HSTL-compatible I/O with variable driveSupports impedance-matched signaling up to 500 MT/s while allowing drive strength tuning via VDDQ and ZQ
Byte-level write masking (BWS[3:0])Enables partial 36-bit word updates without read-modify-write cycles, reducing bus traffic in packet buffer applications
JTAG 1149.1 test accessProvides boundary-scan visibility for interconnect testing and manufacturing validation in dense BGA layouts

Applications

Network Packet Buffer Switch Fabric Lookup Table

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches with line-rate forwarding.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as high-throughput temporary storage with zero-turnaround read/write concurrency.

Use Value: Sustains 334 MT/s read + 334 MT/s write bandwidth at 167 MHz, matching OC-192/STM-64 interface rates without arbitration stalls.

Use Scenario: Holding forwarding tables and ACL entries in modular chassis switches requiring rapid parallel lookups.

IC Role / Device Role / Timing Role: Deterministic-latency memory serving as content-addressable table backing store with burst-aligned access.

Use Value: 2-word burst delivers two CAM match results per cycle; DLL ensures consistent 1.2 ns output jitter for timing-critical search pipelines.

Baseband Signal Processor Cache High-Speed Test Equipment Memory

Use Scenario: Buffering FFT outputs and channel estimation data in LTE/5G baseband ASICs with real-time processing deadlines.

IC Role / Device Role / Timing Role: Low-latency, pipelined SRAM interfacing directly to DSP cores via dedicated read/write buses.

Use Value: Independent K/K and C/C clock domains decouple processor timing from memory access, simplifying clock domain crossing logic.

Use Scenario: Capturing high-fidelity waveform samples in automated test equipment with >200 MS/s sampling requirements.

IC Role / Device Role / Timing Role: High-reliability burst memory capturing interleaved analog-to-digital converter streams.

Use Value: BWS[3:0] allows selective update of sample segments without disturbing adjacent captured data, preserving integrity during continuous acquisition.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1414AV18-200BZCTHigher speed grade: 200 MHz max clock, 400 MT/s DDR rate, higher operating current (870 mA)Requires tighter power delivery and thermal management; suitable for systems needing >167 MHz headroomSelect when design targets 200 MHz operation and can accommodate increased power and layout constraints
AS7C33618A-167BINPin-compatible QDR-II SRAM from Alliance Memory; same 1M×36, 165-ball FBGA, 167 MHz rating, but lacks JTAG and uses different DLL implementationNo IEEE 1149.1 test access; may require revalidation of timing margins in high-jitter environmentsChoose for cost-sensitive designs where JTAG is unused and timing validation confirms interoperability

Compared with CY7C1414AV18-200BZCT, this part trades peak bandwidth for lower power and relaxed timing closure; compared with AS7C33618A-167BIN, it offers integrated JTAG and Cypress-qualified DLL behavior critical for production test and signal integrity assurance.

Availability

CY7C1414AV18 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric lookup tables, baseband signal processor caches, and high-speed test equipment requiring stable component supply across extended product lifecycles.

Supply support for CY7C1414AV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

The QDR-II SRAM product line targets high-bandwidth, low-latency memory subsystems in networking infrastructure and real-time signal processing, prioritizing concurrent access, deterministic timing, and robust DDR signaling.

FAQ

What is the minimum supported I/O voltage (VDDQ) for CY7C1414AV18?

The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V is not guaranteed and violates the HSTL Class I specification required for proper input threshold and output drive compliance. At 1.4 V, output drive strength is reduced but remains functional within AC timing limits specified in the datasheet.

Can CY7C1414AV18 operate with only one clock (K-only mode)?

Yes - the device supports single-clock mode where K serves as both input and output clock. In this configuration, C and C are tied to K and K respectively, and Q[35:0] is driven on K/K edges. However, echo clocks CQ/CQ remain functional and aligned to K/K, preserving deskew capability for receiver capture.

How does the ZQ pin affect output impedance calibration?

ZQ connects to an external resistor (RQ) to ground; the device measures RQ and scales its output drivers to 0.2 × RQ. For example, a 50 Ω RQ yields ~10 Ω driver impedance. If ZQ is tied to VDDQ, minimum impedance mode activates (~7 Ω), increasing drive strength but potentially worsening signal integrity on long traces.

Is DOFF pin required to be pulled high in normal operation?

Yes - DOFF must be held HIGH (VDDQ or logic 1) to enable the internal DLL. Pulling DOFF LOW disables the DLL, causing significant AC timing parameter shifts (e.g., increased tAC, reduced tHZ), and is only recommended for specific debug or legacy compatibility scenarios explicitly documented in the datasheet.

CY7C1414AV18-167BZCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1414AV18-167BZCT FAQ

1.How can I place an order for CY7C1414AV18-167BZCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1414AV18-167BZCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1414AV18-167BZCT reliable?

The price and inventory of CY7C1414AV18-167BZCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414AV18-167BZCT is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1414AV18-167BZCT transactions.

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CY7C1414AV18-167BZCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1414AV18-167BZCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1414AV18-167BZCT?

For technical support, including CY7C1414AV18-167BZCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1414AV18-167BZCT requirements.

6.How does Aetrix verify that CY7C1414AV18-167BZCT is sourced from the original manufacturer or authorized distributors?

All CY7C1414AV18-167BZCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414AV18-167BZCT meets industry standards.

7.What is the process for return or replacement of CY7C1414AV18-167BZCT?

All CY7C1414AV18-167BZCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414AV18-167BZCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1414AV18-167BZCT part is unused and in its original packaging.

Return procedure for CY7C1414AV18-167BZCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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