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Infineon Technologies CY7C1414AV18-167BZI

Part No.:
CY7C1414AV18-167BZI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1414AV18-167BZI.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,140

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Product details

Overview

CY7C1414AV18 from Cypress Semiconductor is a 1M × 36-bit, 36-Mbit QDR-II™ SRAM with synchronous pipelined architecture, dual independent read/write ports, 167 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It delivers 500 MT/s DDR data transfer on both ports and is used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1414AV18 datasheet, CY7C1414AV18 pinout, CY7C1414AV18 application, or CY7C1414AV18 equivalent, key selection criteria include its x36 bus width, 19-bit address interface, BWS[3:0] byte write select capability, echo clock support (CQ/CQ), and 165-ball FBGA package compatibility with HSTL-18 I/O standards.

Technical Context

The CY7C1414AV18 implements QDR-II architecture with physically separate read and write data paths-36-bit input D[35:0] and 36-bit output Q[35:0]-eliminating bus turnaround overhead. All accesses are synchronized to rising edges of K/K clocks (write/read address capture) and C/C clocks (output timing), enabling concurrent read/write operations without arbitration.

It integrates a Delay Lock Loop (DLL) for precise data placement, supports JTAG 1149.1 boundary scan, and uses ZQ pin for dynamic output impedance tuning against system trace impedance. The device organizes memory as two 512K × 36 arrays, with burst length fixed at two 36-bit words per access.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1M × 36 configuration)
Max Clock Frequency 167 MHz - determines maximum sustained bandwidth of 12 Gbps (36-bit × 2 words × 167 MHz)
Core Supply Voltage 1.8 V ± 0.1 V - defines minimum power rail stability requirement for internal logic and array operation
I/O Supply Range VDDQ = 1.4 V to 1.8 V - sets compatible HSTL-18 driver/receiver voltage domain for signal integrity
Burst Length 2-word fixed burst - guarantees deterministic latency and eliminates burst-length configuration overhead
Write Select Granularity Four independent byte write enables (BWS[3:0]) - allows partial 36-bit word updates without read-modify-write cycles
Package 165-ball FBGA (15 mm × 17 mm × 1.4 mm) - matches standard PCB layout footprints for high-pin-count memory devices

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant lead-free option available.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs Sampled on rising edge of K clock; 36-bit parallel path for full-word or byte-selectable writes
Q[35:0] Synchronous read data outputs Driven on rising edges of C/C clocks; provides two 36-bit words per read cycle with echo-clock alignment
A[18:0] Multiplexed address inputs 19-bit bus latched separately on K (read) and K (write) rising edges; supports 1M-depth addressing
BWS[3:0] Byte write select inputs Active-low controls for D[8:0], D[17:9], D[26:18], D[35:27]; enables partial writes without data corruption
RPS / WPS Read/Write port select Active-low enables concurrent but independent port activation; deselection tri-states Q[35:0] or ignores D[35:0]
C / C, CQ / CQ Output/data capture clocks C/C provide deskewed read clocking; CQ/CQ are phase-aligned echo clocks simplifying source-synchronous capture
ZQ Impedance calibration reference Connects to external resistor to ground to tune output driver impedance to match PCB trace (0.2 × RQ)
TCK/TMS/TDI/TDO JTAG test access port IEEE 1149.1 compliant for boundary scan testing and in-system diagnostics

Key Features

Feature Design Value
Separate read/write data ports Eliminates bus turnaround delay and contention, enabling true simultaneous 36-bit read + 36-bit write per cycle
Double Data Rate (DDR) interfaces 500 MT/s effective throughput per port using 167 MHz clocks - doubles bandwidth versus single-data-rate SRAMs
Delay Lock Loop (DLL) Compensates for process/voltage/temperature variation to maintain < ±50 ps data-to-clock skew at 167 MHz
HSTL-18 compatible I/O Supports 1.4–1.8 V VDDQ with programmable drive strength - ensures signal integrity on high-speed backplanes
Byte-level write masking BWS[3:0] enables selective update of four 9-bit segments within each 36-bit word - avoids destructive full-word writes

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Line-rate buffering of 10 GbE/40 GbE packet headers and payloads in switch fabric ASICs.

IC Role / Device Role / Timing Role: Dedicated QDR-II SRAM serving as first-level packet buffer with zero-turnaround latency between ingress and egress engines.

Use Value: 36-bit bus width matches typical packet header widths; 167 MHz DDR timing meets sub-10 ns access requirements for cut-through switching.

Use Scenario: Real-time waveform capture and pattern generation in automated test equipment (ATE) for SoC validation.

IC Role / Device Role / Timing Role: High-bandwidth memory staging buffer between high-speed ADC/DAC and FPGA-based pattern sequencer.

Use Value: Concurrent read/write capability enables seamless ping-pong buffering at 500 MT/s, sustaining >12 Gbps sustained data flow without stalls.

Telecom Baseband Processing Defense Radar Signal Processing

Use Scenario: Inter-stage buffering between FFT engines and channelizers in LTE/5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory for time-critical symbol processing pipelines.

Use Value: Fixed 2-word burst and DLL-controlled timing ensure predictable 12 ns read-to-output delay across temperature, critical for coherent processing.

Use Scenario: Pulse-Doppler radar front-end data buffering where deterministic latency and radiation-tolerant timing are mandatory.

IC Role / Device Role / Timing Role: Radiation-hardened-by-design SRAM (via Cypress qualification) used for real-time pulse compression lookup tables.

Use Value: 1.8 V core reduces power-induced thermal drift; echo clocks (CQ/CQ) enable robust source-synchronous capture under EMI stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36115L10BG 36-Mbit QDR-II+ (not QDR-II); supports 250 MHz, higher power, different pinout (165-ball but non-interchangeable) Targets newer designs requiring >200 MHz operation; not drop-in compatible due to timing and control signal differences Select when bandwidth >15 Gbps is required and board layout allows re-spin for updated timing and pin mapping
ISSI IS61WV102436B 1M × 36 sync SRAM with single-port architecture; no separate read/write ports; max 133 MHz; no echo clocks or DLL Suitable for cost-sensitive, lower-bandwidth control-plane buffers where concurrency is not required Choose only if system does not require simultaneous read/write and can tolerate bus turnaround delays and reduced throughput

Compared with IDT72T36115L10BG and ISSI IS61WV102436B, the CY7C1414AV18 uniquely balances 167 MHz QDR-II concurrency, echo-clock–assisted capture, and proven field reliability in telecom infrastructure-making it optimal for legacy and long-lifecycle designs where pin-and-function compatibility is critical.

Availability

CY7C1414AV18 is available at Aetrix Electronics and suitable for network switch buffering, high-speed test instrumentation, and telecom baseband subsystems requiring stable component supply over extended production lifecycles.

Supply support for CY7C1414AV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable systems-on-chip for industrial, automotive, and communications markets.

The CY7C1414AV18 belongs to Cypress's QDR-II SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory interfacing in networking and signal processing ASICs.

FAQ

What is the minimum VDDQ voltage supported by CY7C1414AV18?

The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V is not guaranteed and may cause HSTL-18 input threshold violations or output drive degradation. System designs must regulate VDDQ within this range and verify timing margins at 1.4 V corner conditions.

Can CY7C1414AV18 operate without the DLL enabled?

Yes - tying DOFF low disables the DLL, reverting to basic clock-to-output timing. However, AC parameters change significantly: tAC increases by up to 1.8 ns and setup/hold windows shrink. This mode is only recommended for prototyping or low-speed validation, not production use.

How many address bits are required for CY7C1414AV18, and how are they used?

CY7C1414AV18 requires 19 address bits (A[18:0]) because it implements a 1M × 36 organization (220 = 1,048,576 addresses, but internal dual-array structure uses 19 bits per bank). A[18:0] are multiplexed: latched on K rising edge for reads, K rising edge for writes - no external address demux needed.

Is the ZQ pin required to be connected, and what happens if left floating?

ZQ must never be left unconnected or tied to GND. It must be connected either to an external resistor (RQ) to ground for impedance calibration, or directly to VDDQ for minimum-drive mode. Floating ZQ causes undefined output impedance, leading to signal integrity failures and potential bus contention in multi-drop configurations.

CY7C1414AV18-167BZI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1414AV18-167BZI FAQ

1.How can I place an order for CY7C1414AV18-167BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1414AV18-167BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1414AV18-167BZI reliable?

The price and inventory of CY7C1414AV18-167BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414AV18-167BZI is usually 5 days.

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Once your CY7C1414AV18-167BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1414AV18-167BZI?

For technical support, including CY7C1414AV18-167BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1414AV18-167BZI requirements.

6.How does Aetrix verify that CY7C1414AV18-167BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1414AV18-167BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414AV18-167BZI meets industry standards.

7.What is the process for return or replacement of CY7C1414AV18-167BZI?

All CY7C1414AV18-167BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414AV18-167BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1414AV18-167BZI part is unused and in its original packaging.

Return procedure for CY7C1414AV18-167BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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