Infineon Technologies CY7C1414AV18-250BZC
- Part No.:
- CY7C1414AV18-250BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1414AV18-250BZC.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1414AV18 from Cypress Semiconductor is a 1M × 36-bit, 36-Mbit QDR-II™ SRAM with separate read/write ports, 250 MHz clock operation, DDR interfaces on both ports (500 MT/s effective data rate), and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers full data coherency, synchronous self-timed writes, and supports depth expansion via independent port selects - deployed in high-speed network packet buffers and switch fabric memory subsystems.
For engineers reviewing the CY7C1414AV18 datasheet, CY7C1414AV18 pinout, CY7C1414AV18 application, or CY7C1414AV18 equivalent, key selection criteria include its 1.8V core / 1.4V–1.8V I/O supply range, HSTL-compatible variable-drive outputs, JTAG 1149.1 test access, DLL-based timing accuracy, and 2-word burst architecture enabling deterministic latency in pipelined memory systems.
Technical Context
The CY7C1414AV18 implements QDR-II architecture with physically isolated read and write data paths - eliminating bus turnaround overhead and preventing data contention. Its dual-clock domain uses K/K for address/data capture and C/C for output timing, with echo clocks CQ/CQ referenced to C/C to compensate for flight-time skew in multi-device layouts.
All synchronous inputs (RPS, WPS, BWS[3:0], A[18:0], D[35:0]) are registered on rising edges of K or K; all outputs (Q[35:0], CQ, CQ) are edge-aligned to C/C or K/K in single-clock mode. The internal 512K × 36 array is split into two banks, supporting concurrent read/write operations with guaranteed data coherency and no arbitration logic required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1M × 36 organization) |
| Maximum Clock Frequency | 250 MHz - enables 500 MT/s DDR throughput per port |
| Core Supply Voltage (VDD) | 1.8 V ±0.1 V - defines minimum power rail stability requirement for internal logic |
| I/O Supply Range (VDDQ) | 1.4 V to 1.8 V - sets HSTL-18 compatible output drive level and input threshold |
| Burst Length | 2-word burst - delivers two sequential 36-bit words per access cycle without address increment |
| Write Select Granularity | Four independent byte write enables (BWS[3:0]) - allows partial 36-bit word updates without read-modify-write |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - matches JEDEC MO-270AB standard for high-density routing |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant lead-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | Latched on rising edge of K clock; 36-bit parallel path for write port |
| Q[35:0] | Synchronous read data outputs | Driven on rising edges of C/C clocks; tri-stated when RPS inactive |
| A[18:0] | Multiplexed address bus | 19-bit shared address for both read and write ports; latched on K (read) or K (write) |
| RPS | Read port select | Active-low signal initiating read burst; sampled on rising edge of K |
| WPS | Write port select | Active-low signal initiating write burst; sampled on rising edge of K |
| BWS[3:0] | Byte write select | Four active-low controls enabling/disabling 8-bit segments of D[35:0] during write |
| K, K | Positive/negative input clocks | Rising edges control all synchronous inputs; K used for read address, K for write address |
| C, C | Positive/negative output clocks | Rising edges gate Q[35:0] and CQ/CQ outputs; enable deskew of output timing across PCB traces |
| CQ, CQ | Echo clocks | Free-running outputs synchronized to C/C; simplify high-speed data capture at controller side |
| ZQ | Output impedance calibration | Connect to external resistor to ground to tune Q[35:0]/CQ/CQ drive strength to 0.2×RQ |
| VREF | HSTL reference voltage | Static bias point for input threshold and output termination; must be stable at 0.75×VDDQ |
| TCK/TMS/TDI/TDO | JTAG 1149.1 interface | Support boundary scan testing and device-level diagnostics per IEEE standard |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Eliminates bus turnaround delay and avoids contention in full-duplex memory access |
| 250 MHz DDR interface (500 MT/s) | Delivers 18 Gbps aggregate bandwidth (36 bits × 500 MHz) with deterministic timing |
| On-chip Delay Lock Loop (DLL) | Aligns internal data launch to output clocks within ±50 ps jitter, enabling >250 MHz reliable operation |
| Variable-drive HSTL outputs | Adjustable strength via ZQ calibration ensures signal integrity on long, loaded traces |
| Full data coherency | Guarantees most recent written data appears on next read - no cache coherency protocol needed |
| Depth expansion support | Independent RPS/WPS and BWS[3:0] allow stacking multiple devices without external logic |
Applications
| Network Packet Buffering | Switch Fabric Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches with sub-10 ns access latency requirements. IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-wait-state buffer between ingress parser and egress scheduler, using K/K for address staging and C/C for synchronized header readout. Use Value: Concurrent 36-bit write (packet header) and 36-bit read (forwarding decision) eliminates pipeline stalls, sustaining 10+ Gbps line-rate processing. |
Use Scenario: Interconnecting crossbar switch controllers and port adapters in modular chassis-based routers. IC Role / Device Role / Timing Role: Shared memory resource for cell-based switching, where write port accepts cells from input ports and read port services output ports under centralized arbitration. Use Value: 2-word burst delivers two 36-bit cells per cycle, matching ATM/POS cell size and enabling deterministic 5.76 Gbps per device throughput. |
| High-Speed Test Equipment Memory | Real-Time Signal Processing Buffer |
Use Scenario: Capturing and replaying high-frequency digital waveforms in automated test equipment (ATE) with nanosecond timestamp resolution. IC Role / Device Role / Timing Role: High-bandwidth acquisition buffer feeding FPGA-based pattern generators, using echo clocks CQ/CQ to align captured data with system clock domain. Use Value: DLL-calibrated outputs and HSTL drive ensure <100 ps setup/hold margin at 500 MT/s, supporting 12-bit @ 250 MS/s digitizer interfaces. |
Use Scenario: Holding intermediate FFT coefficients and filter taps in radar DSP subsystems requiring low-latency memory access. IC Role / Device Role / Timing Role: Ping-pong buffer between ADC front-end and DSP core, with write port receiving samples and read port supplying coefficient data to MAC units. Use Value: Independent RPS/WPS enables simultaneous sample ingestion and coefficient fetch without arbitration, reducing processing latency by 3.2 cycles per 36-bit word. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C362000B-250BIN | 250 MHz, 1M × 36, 2.5V core, SSTL-2 I/O, no echo clocks or DLL | Requires external clock deskew; lacks ZQ calibration and JTAG | Lower cost for non-critical timing systems where board-level skew compensation is feasible |
| IS61WV102436BLL-250TQLI | 250 MHz, 1M × 36, 3.3V tolerant I/O, no BWS granularity or CQ/CQ outputs | Needs level-shifting for 1.8V systems; no built-in impedance tuning | Suitable for legacy 3.3V designs where QDR-II-specific features are not required |
Compared with AS7C362000B-250BIN and IS61WV102436BLL-250TQLI, the CY7C1414AV18 provides superior timing control via DLL and echo clocks, finer 8-bit write granularity, and 1.8V core compatibility - critical for modern low-power, high-density switch fabric implementations.
Availability
CY7C1414AV18 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, high-speed test equipment memory, and real-time signal processing applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for CY7C1414AV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.
The QDR-II SRAM product line targets high-throughput, low-latency memory subsystems in packet-switched infrastructure - specifically engineered to replace asynchronous SRAMs and simplify DDR-based buffer design in telecom and datacom equipment.
FAQ
What is the minimum VDDQ voltage supported for CY7C1414AV18 operation?
The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V violates HSTL-18 input thresholds and output drive specifications, risking setup/hold violations and increased bit error rates. The 1.4 V lower bound is validated in AC timing tables and must be maintained across temperature and load conditions.
Can CY7C1414AV18 operate in single-clock mode without C and C inputs?
Yes - when C and C are tied to K and K respectively, the device enters single-clock mode. In this configuration, Q[35:0] and CQ/CQ are driven on rising edges of K/K, eliminating need for separate output clocks but removing flight-time deskew capability. All timing parameters shift to K/K-referenced values per datasheet Table 10.
How does ZQ pin calibration affect output drive strength?
ZQ connects to an external resistor (RQ) to ground, setting output impedance to 0.2×RQ for Q[35:0], CQ, and CQ. For example, a 50 Ω RQ yields 10 Ω driver impedance, matching typical 50 Ω PCB traces. Direct connection to VDDQ enables minimum impedance (~7 Ω), while floating or grounding ZQ causes undefined behavior and timing violations.
Is JTAG boundary scan functional when DOFF is asserted?
Yes - DOFF only disables the internal DLL and does not affect JTAG TAP controller operation. TCK/TMS/TDI/TDO remain fully functional for IEEE 1149.1 compliance testing regardless of DLL state. However, AC timing parameters change when DLL is off, so scan patterns must account for altered propagation delays.
CY7C1414AV18-250BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1414AV18-250BZC FAQ
1.How can I place an order for CY7C1414AV18-250BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1414AV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1414AV18-250BZC reliable?
The price and inventory of CY7C1414AV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414AV18-250BZC is usually 5 days.
3.What payment methods are accepted for CY7C1414AV18-250BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1414AV18-250BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1414AV18-250BZC?
CY7C1414AV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1414AV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1414AV18-250BZC?
For technical support, including CY7C1414AV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1414AV18-250BZC requirements.
6.How does Aetrix verify that CY7C1414AV18-250BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1414AV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414AV18-250BZC meets industry standards.
7.What is the process for return or replacement of CY7C1414AV18-250BZC?
All CY7C1414AV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414AV18-250BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1414AV18-250BZC part is unused and in its original packaging.
Return procedure for CY7C1414AV18-250BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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