Infineon Technologies CY7C1414BV18-200BZXI

Overview

CY7C1414BV18-200BZXI from Cypress Semiconductor is a 36-Mbit QDR® II SRAM with 1M × 36 organization, 200 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply. It implements dual independent DDR read/write ports with 2-word burst, echo clocks (CQ/CQ), and DLL-enabled 1.5-cycle read latency - deployed in high-speed packet buffering for network line cards.

For engineers reviewing the CY7C1414BV18-200BZXI datasheet, CY7C1414BV18-200BZXI pinout, CY7C1414BV18-200BZXI application, or CY7C1414BV18-200BZXI equivalent, key selection criteria include x36 bus width support, FBGA-165 package compatibility, HSTL-18 I/O interface timing, and DLL-on/DLL-off mode behavior at 200 MHz.

Technical Context

This QDR II SRAM uses fully synchronous pipelined architecture with physically separate read and write data paths, eliminating bus turnaround overhead. Its dual-clock domain (K/K for address/control/data capture; C/C for output timing) enables concurrent read/write operations at 200 MHz with 500 MT/s effective throughput per port.

The device supports both DLL-on mode (1.5-cycle read latency, precise echo clock alignment) and DLL-off mode (1-cycle latency, QDR I timing up to 167 MHz). Byte write select (BWS[3:0]) allows granular 9-bit byte masking, and ZQ pin enables on-die impedance tuning to match 50 Ω system buses.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L10PA and IS61WV102436B, CY7C1414BV18-200BZXI uniquely combines 200 MHz operation, ZQ-based impedance calibration, and JTAG testability - making it optimal for high-reliability telecom and test equipment where signal integrity and production testability are mandatory.

Availability

CY7C1414BV18-200BZXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and high-speed test equipment requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1414BV18-200BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1414BV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory subsystems in networking infrastructure and test instrumentation.

FAQ

What is the function of the DOFF pin on CY7C1414BV18-200BZXI?

The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and reduced maximum frequency (167 MHz). When pulled HIGH, it enables QDR II mode with 1.5-cycle latency and full 200 MHz capability. It must be externally biased via a ≤10 kΩ pull-up resistor for normal operation.

Can CY7C1414BV18-200BZXI operate with only a single clock source?

Yes - the device supports single-clock mode using only K and K inputs for both address capture and output timing. In this configuration, C and C are not required, and Q[35:0] outputs are synchronized to K/K edges. However, echo clocks (CQ/CQ) remain functional and phase-aligned to K/K, preserving source-synchronous capture capability at the receiver.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin connects to an external 50 Ω resistor to ground, enabling on-die calibration of output driver impedance for Q[35:0] and CQ/CQ signals. This matches the device's output impedance to the PCB trace characteristic impedance, reducing reflections and improving eye diagram margins at 500 MT/s. Leaving ZQ unconnected or tied to GND violates specification and causes undefined output drive strength.

What is the purpose of BWS[3:0] in CY7C1414BV18-200BZXI?

BWS[3:0] are four active-low byte write select signals that enable selective 9-bit byte updates within the 36-bit word. Each BWS bit controls one 9-bit segment: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. Deasserting any BWS prevents corresponding byte data from being written - allowing efficient partial-word modifications without full-word read-modify-write sequences.