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Infineon Technologies CY7C1414JV18-250BZXC

Part No.:
CY7C1414JV18-250BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1414JV18-250BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,474

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Product details

Overview

CY7C1414JV18 from Cypress Semiconductor is a 1M × 36-bit (36-Mbit), 1.8V QDR-II SRAM with separate read/write ports, 267 MHz clock operation, DDR interfaces on both ports (534 Mbps effective data rate), and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers full data coherency and supports concurrent read/write transactions in high-bandwidth networking buffers and packet forwarding engines.

For engineers reviewing the CY7C1414JV18 datasheet, CY7C1414JV18 pinout, CY7C1414JV18 application, or CY7C1414JV18 equivalent, key selection criteria include its dual-clock DDR timing architecture, DLL-enabled 1.5-cycle read latency, HSTL-compatible I/Os, and x36 burst width for high-throughput memory subsystems in telecom line cards and FPGA-based accelerators.

Technical Context

The CY7C1414JV18 implements a synchronous pipelined QDR-II architecture with physically independent read and write data paths, eliminating bus turnaround overhead. Its 19-bit multiplexed address bus accesses two internal 512K × 36 arrays, latched separately on rising edges of K (write) and K (read) clocks.

It uses dual echo clocks (CQ/CQ) referenced to C/C for precise data capture at 534 MHz, and supports DLL-on (1.5-cycle read latency) or DLL-off (1-cycle latency, ≤167 MHz) modes. Output impedance is calibrated via ZQ pin to match system trace impedance, and byte write selects (BWS[3:0]) enable granular 9-bit sub-word writes.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density36 Mbit (1M × 36 configuration)
Max Clock Frequency267 MHz - enables 534 MT/s DDR throughput per port
Read Latency1.5 cycles (DLL enabled) - aligns data valid window with echo clock for reliable capture
Core SupplyVDD = 1.8 V ±0.1 V - defines logic threshold and power envelope for low-voltage system integration
I/O SupplyVDDQ = 1.4 V to 1.8 V - sets HSTL Class I output drive strength and input reference level
Burst Width2-word burst - delivers 72 bits per access cycle, matching high-speed SerDes or parallel bus widths
Package165-ball FBGA (15 × 17 × 1.4 mm) - supports fine-pitch routing and thermal dissipation in dense PCB layouts

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free compatible.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data inputsLatched on rising edge of K clock; supports full 36-bit parallel writes
Q[35:0]Synchronous read data outputsDriven on rising edges of both C and C clocks; provides DDR-aligned burst data
K / KWrite/read address and control clock inputsRising-edge-triggered; separates write and read timing domains to prevent contention
C / COutput data clock pairDeskews flight time across multiple devices; enables deterministic setup/hold at controller
CQ / CQFree-running echo clocksPhase-locked to C/C; simplifies high-speed data capture without external delay tuning
BWS[3:0]Byte write select inputsActive-low controls four 9-bit sub-word writes; preserves unselected bytes during partial writes
ZQOutput impedance calibration referenceConnects to external resistor to ground to tune Q[35:0]/CQ/CQ drive strength to 0.2×RQ

Key Features

FeatureDesign Value
Separate read/write portsEnables true concurrent access-no bus turnaround required, eliminating arbitration delays in real-time buffering
267 MHz DDR interfaceDelivers 534 MT/s per port, supporting >38 Gbps aggregate bandwidth in x36 configuration
Delay Lock Loop (DLL)Provides 1.5-cycle read latency with phase-aligned echo clocks, enabling stable sampling at 534 MHz
HSTL Class I I/OEnsures signal integrity on high-speed parallel buses with controlled slew and termination compatibility
JTAG 1149.1 test portSupports boundary-scan testing and in-system diagnostics without additional test fixtures

Applications

Packet Buffering in Switch ASICsHigh-Speed FPGA Co-Processing Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency shared buffer between ingress parser and egress scheduler logic.

Use Value: Concurrent read/write eliminates serialization bottlenecks, sustaining full line-rate 10G/25G traffic with deterministic 1.5-cycle latency.

Use Scenario: Offloading burst-intensive data reordering and lookup operations from FPGA fabric.

IC Role / Device Role / Timing Role: High-bandwidth memory extension synchronized to FPGA's native clock domain via K/K and C/C.

Use Value: x36 burst width matches AXI4-Stream or PCIe TLP payload sizes, reducing transaction count by 4× vs. x8 devices.

Telecom Line Card Data BuffersReal-Time Video Frame Store

Use Scenario: Temporary storage of ATM cells or OTN frames in carrier-grade optical transport equipment.

IC Role / Device Role / Timing Role: QDR-II SRAM interfacing directly with SerDes PHYs and framer ICs using matched-length C/C and CQ/CQ traces.

Use Value: Echo clocks eliminate board-level skew compensation, enabling reliable 534 Mbps DDR capture without custom delay ICs.

Use Scenario: Frame buffering between video encoder and display controller in broadcast-grade 4K60 systems.

IC Role / Device Role / Timing Role: Sustained 2-word burst reads/writes synchronized to pixel clock domain for seamless frame handoff.

Use Value: Full data coherency ensures no stale pixel data appears during rapid frame swaps, critical for glitch-free broadcast output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615036-Mbit QDR-II+ (333 MHz max), 1.5V core, supports 2-cycle read latency onlyHigher frequency margin but lacks DLL-off mode; requires tighter timing closureSelect when system demands >267 MHz operation and can accommodate fixed 2-cycle latency
ISSI IS61WV102436B1M × 36 sync SRAM, 167 MHz max, single clock domain, no echo clocks or DLLNo concurrent read/write; limited to 167 MHz DDR (334 Mbps), no deskew supportSelect for cost-sensitive, lower-bandwidth designs where QDR-II features are unnecessary

Compared with IDT72T36150 and IS61WV102436B, the CY7C1414JV18 uniquely balances 267 MHz performance with flexible DLL-on/off latency modes and integrated echo clocks-making it optimal for systems requiring both high throughput and timing adaptability in FPGA- or ASIC-based memory subsystems.

Availability

CY7C1414JV18 is available at Aetrix Electronics and suitable for packet buffering in network switches, FPGA co-processing memory, telecom line card data buffers, and real-time video frame store applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1414JV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for communications, industrial, and automotive markets.

This device belongs to Cypress's QDR-II SRAM product line, engineered specifically for ultra-low-latency, concurrent-access memory subsystems in high-speed networking and signal processing equipment.

FAQ

What is the function of the DOFF pin on CY7C1414JV18?

The DOFF pin disables the internal Delay Lock Loop when pulled LOW. In DLL-off mode, the device operates with 1-cycle read latency and reduced maximum frequency (≤167 MHz), reverting to QDR-I timing behavior. For normal operation, DOFF must be pulled HIGH via a ≤10-kΩ resistor to VDDQ to enable DLL-based 1.5-cycle latency and full 267 MHz capability.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external resistor (RQ) tied to ground, calibrating the output impedance of Q[35:0], CQ, and CQ pins to 0.2 × RQ. This ensures consistent signal integrity across process/voltage/temperature variations. If ZQ is tied directly to VDDQ, the device enters minimum-impedance mode-use only if system trace impedance is ≤25 Ω and external termination is provided.

Can CY7C1414JV18 operate with a single clock domain?

Yes. When only K and C clocks are used (with K and C tied to K and C respectively), the device operates in single-clock mode. In this configuration, read data is clocked out on K/K edges instead of C/C, and echo clocks CQ/CQ are generated relative to K. All timing parameters shift accordingly, and DLL remains functional for latency control.

What is the purpose of BWS[3:0] in the x36 configuration?

BWS[3:0] are active-low byte write select signals controlling four independent 9-bit sub-word writes within the 36-bit data bus. Each BWS bit enables writing to its corresponding 9-bit segment (e.g., BWS0 → D[8:0]), leaving unselected bytes unchanged. This enables efficient partial writes without requiring read-modify-write cycles, critical for protocol header updates in packet processing.

CY7C1414JV18-250BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1414JV18-250BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1414JV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1414JV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414JV18-250BZXC is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C1414JV18-250BZXC?

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6.How does Aetrix verify that CY7C1414JV18-250BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1414JV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414JV18-250BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1414JV18-250BZXC?

All CY7C1414JV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414JV18-250BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1414JV18-250BZXC part is unused and in its original packaging.

Return procedure for CY7C1414JV18-250BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1414JV18-250BZXC Tags

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