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Infineon Technologies CY7C1414KV18-250BZCT

Part No.:
CY7C1414KV18-250BZCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1414KV18-250BZCT.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,188

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Product details

Overview

CY7C1414KV18 from Cypress Semiconductor is a 1M × 36, 36-Mbit QDR® II SRAM with two-word burst architecture, 1.8 V core supply, and 1.4–1.8 V I/O supply. It supports concurrent read/write operations at 250 MHz (500 MT/s effective), features separate DDR read/write ports with echo clocks (CQ/CQ), and delivers deterministic 1.5-cycle read latency when DOFF = HIGH. It is used in high-speed network packet buffering and FPGA-based protocol acceleration.

For engineers reviewing the CY7C1414KV18 datasheet, CY7C1414KV18 pinout, CY7C1414KV18 application, or CY7C1414KV18 equivalent, key selection criteria include its 1M × 36 organization, 165-ball FBGA package, dual-clock DDR timing, echo clock support for source-synchronous capture, and DOFF-configurable read latency mode.

Technical Context

The CY7C1414KV18 implements a true dual-port QDR II architecture with physically independent read and write data paths-no bus turnaround required. Its 19-bit address bus latches both read and write addresses on alternating rising edges of K/K clocks, enabling full port independence.

It uses a PLL to align output data with echo clocks CQ/CQ, supporting precise source-synchronous capture at 500 MT/s. The device supports byte-write masking via four BWS signals (BWS0–BWS3), each controlling a 9-bit byte within the 36-bit D[35:0] bus, ensuring partial writes without read-modify-write overhead.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 1M × 36 (36 Mbit total); enables single-access retrieval of full 36-bit word for wide-bus protocols like PCI Express or Ethernet MAC interfaces
Maximum Clock Frequency 250 MHz K/K input clock; yields 500 MT/s effective bandwidth per port with DDR interface
Read Latency Configurable: 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW); determines minimum read-to-read or read-after-write timing constraints
Core & I/O Supply VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V; allows interoperability with 1.5 V or 1.8 V logic families and reduces I/O switching noise
Package 165-ball FBGA (13 × 15 × 1.4 mm); RoHS-compliant, thermally optimized for high-density routing and signal integrity
Burst Mode Two-word burst on every access; delivers sequential 36-bit words per clock edge-critical for streaming packet payloads
Write Control Separate WPS and RPS signals with synchronous sampling on K/K rising edges; enables precise port arbitration and avoids metastability

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, JEDEC MO-270AC compliant.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs 36-bit parallel data bus sampled on rising edge of K clock; supports full-word or byte-selectable writes via BWS0–BWS3
Q[35:0] Synchronous read data outputs 36-bit parallel outputs driven on rising edges of C/C clocks; tristated automatically when RPS is deasserted
A[18:0] Multiplexed address inputs 19-bit address bus latched separately for read (on K) and write (on K); eliminates need for external address demux
WPS / RPS Port select controls Active-low synchronous enables-WPS initiates write, RPS initiates read; both sampled on K rising edge
BWS[3:0] Byte write select inputs Four independent 9-bit byte masks; each controls one 9-bit segment of D[35:0], enabling partial 36-bit writes without read-modify-write
C / C / CQ / CQ Output timing clocks & echoes C/C drive Q[35:0]; CQ/CQ are free-running echoes synchronized to C/C-used by controller for source-synchronous data capture
K / K Input timing clocks Primary differential clocks for all synchronous inputs (address, data, control); rising edges sample all registers
DOFF Read latency mode control High = 1.5-cycle latency (optimized for throughput); Low = 1-cycle latency (optimized for low-latency response)

Key Features

Feature Design Value
Independent Read/Write Ports Eliminates bus turnaround delays-enables simultaneous 500 MT/s read and write traffic on same memory array
Source-Synchronous Echo Clocks (CQ/CQ) Enables reliable >500 MT/s data capture at FPGA or ASIC receiver without complex deskew circuitry
Configurable Read Latency (DOFF) Allows system-level trade-off between latency-critical control plane access (1-cycle) and throughput-critical data plane (1.5-cycle)
Four-Byte Write Masking (BWS[3:0]) Permits atomic 9-bit, 18-bit, 27-bit, or 36-bit writes-essential for protocol header updates without corrupting adjacent fields
JTAG 1149.1 Boundary Scan Supports IEEE-compliant production test and board-level debug without requiring additional test fixtures or probes

Applications

Network Packet Buffering FPGA-Based Protocol Acceleration

Use Scenario: Storing ingress/egress Ethernet or IP packets in line-rate switches/routers where sustained 10+ Gbps throughput is required.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfacing directly to SerDes PHYs and packet classification engines.

Use Value: Concurrent 500 MT/s reads and writes eliminate serialization bottlenecks, enabling full-duplex 10G+ packet processing without external arbitration logic.

Use Scenario: Offloading TCP/IP, TLS, or encryption tasks from CPU to FPGA co-processor using tightly coupled memory for descriptor queues and context tables.

IC Role / Device Role / Timing Role: Deterministic-latency scratchpad memory for FPGA DMA controllers managing scatter-gather lists and state tables.

Use Value: DOFF-selectable latency and echo clocks ensure predictable timing closure in FPGA timing analysis, reducing design iteration cycles.

Telecom Baseband Processing High-Speed Test Equipment Memory

Use Scenario: Real-time buffering of IQ samples between ADC/DAC and DSP cores in 4G/5G radio units operating at >122.88 MSPS sample rates.

IC Role / Device Role / Timing Role: Synchronous dual-port frame buffer synchronizing asynchronous sample streams across multiple clock domains.

Use Value: Separate K/K and C/C clock domains allow independent domain crossing-eliminating FIFOs and reducing jitter-induced sample loss.

Use Scenario: Pattern memory in automated test equipment (ATE) generating multi-GHz digital stimulus vectors for SoC validation.

IC Role / Device Role / Timing Role: High-reliability, low-jitter waveform storage accessed by high-speed pattern generators with strict setup/hold requirements.

Use Value: HSTL-compatible 1.4–1.8 V I/O and echo clocks enable clean, skew-controlled signal delivery to >1 GHz comparator inputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1412KV18 2M × 18 organization (same 36-Mbit density); 20-bit address bus; fewer BWS pins (BWS[1:0]) Better suited for 18-bit bus architectures (e.g., legacy DSP interfaces); requires wider address decoding for same depth Select when system bus width is fixed at 18 bits and depth expansion via RPS/WPS is preferred over width scalability
AS7C336000B-250BIN 36-Mbit QDR II+ (not QDR II); supports 333 MHz operation; includes dynamic power-down and enhanced DLL Higher frequency headroom and lower active power (730 mA vs. 730 mA @ 250 MHz); not drop-in compatible due to pinout and timing differences Choose for new designs targeting >250 MHz operation or requiring deeper power management-requires layout and timing redesign

Compared with CY7C1412KV18 and AS7C336000B-250BIN, the CY7C1414KV18 uniquely balances 36-bit native width, 250 MHz reliability, and mature ecosystem support-making it optimal for cost-sensitive, volume-deployed networking hardware where 1M × 36 mapping simplifies address translation and reduces FPGA logic usage.

Availability

CY7C1414KV18 is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based protocol acceleration, telecom baseband processing, and high-speed test equipment requiring stable component supply across multi-year production cycles.

Supply support for CY7C1414KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing predictability.

The QDR® II SRAM product line was developed specifically for deterministic, high-throughput memory access in packet-switched infrastructure-prioritizing concurrent dual-port operation, echo-clock synchronization, and low-latency configurability over density or cost-per-bit.

FAQ

What is the function of the DOFF pin on CY7C1414KV18?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for maximum throughput; when LOW, it selects 1-cycle latency for minimal delay. This setting affects internal pipeline staging but does not alter clock frequencies, timing margins, or pin compatibility.

Can CY7C1414KV18 operate with only a single clock (K) instead of differential K/K?

Yes-CY7C1414KV18 supports single-ended clocking where K is used for all synchronous inputs and Q[35:0] outputs are clocked by K. In this mode, C/C and CQ/CQ are unused, and the device behaves as a single-clock DDR SRAM with simplified timing but reduced skew tolerance.

How does byte write select (BWS) work with the 36-bit data bus?

BWS[3:0] independently enables four 9-bit segments of D[35:0]: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. Each is sampled synchronously with data on the K clock edge; deselected bytes retain prior contents, enabling atomic partial writes without read-modify-write cycles.

Is the 165-ball FBGA package of CY7C1414KV18 compatible with standard reflow profiles?

Yes-the 165-ball FBGA (13 × 15 × 1.4 mm) uses SnAgCu (SAC305) solder balls and complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3. Standard lead-free reflow profiles with peak temperature ≤260°C and time above liquidus 60–150 seconds are fully supported.

CY7C1414KV18-250BZCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1414KV18-250BZCT FAQ

1.How can I place an order for CY7C1414KV18-250BZCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1414KV18-250BZCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1414KV18-250BZCT reliable?

The price and inventory of CY7C1414KV18-250BZCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414KV18-250BZCT is usually 5 days.

3.What payment methods are accepted for CY7C1414KV18-250BZCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1414KV18-250BZCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1414KV18-250BZCT?

CY7C1414KV18-250BZCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1414KV18-250BZCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1414KV18-250BZCT?

For technical support, including CY7C1414KV18-250BZCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1414KV18-250BZCT requirements.

6.How does Aetrix verify that CY7C1414KV18-250BZCT is sourced from the original manufacturer or authorized distributors?

All CY7C1414KV18-250BZCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414KV18-250BZCT meets industry standards.

7.What is the process for return or replacement of CY7C1414KV18-250BZCT?

All CY7C1414KV18-250BZCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414KV18-250BZCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1414KV18-250BZCT part is unused and in its original packaging.

Return procedure for CY7C1414KV18-250BZCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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