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Infineon Technologies CY7C1414KV18-250BZI

Part No.:
CY7C1414KV18-250BZI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1414KV18-250BZI.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,280

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Product details

Overview

CY7C1414KV18 from Cypress Semiconductor is a 1M × 36, 36-Mbit QDR® II SRAM with two-word burst architecture, 250 MHz maximum operating frequency (400 Mbps per pin), 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It features separate read/write ports, DDR interfaces on both ports, and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering applications.

For engineers reviewing the CY7C1414KV18 datasheet, CY7C1414KV18 pinout, CY7C1414KV18 application, or CY7C1414KV18 equivalent, this device is selected for high-bandwidth, low-latency memory subsystems requiring concurrent read/write operations without bus turnaround, precise timing control via dual input clocks (K/K and C/C), and JTAG 1149.1 testability in telecom infrastructure and FPGA co-processor designs.

Technical Context

The CY7C1414KV18 implements a synchronous pipelined QDR II architecture with independent read and write ports sharing a multiplexed 19-bit address bus (A[18:0]). Read and write addresses are latched on alternate rising edges of K and K clocks, enabling true concurrency without arbitration overhead.

It uses a phase-locked loop (PLL) to align echo clocks (CQ/CQ) with output clocks (C/C), ensuring deterministic data valid windows at 500 Mbps per data pin. DOFF pin selects between 1-cycle (LOW) and 1.5-cycle (HIGH) read latency modes, directly impacting system timing closure in high-speed SerDes interface buffers.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 1M × 36 (36 Mbit total); enables single-access retrieval of full 36-bit parallel word for packet header + payload alignment
Max Clock Frequency 250 MHz (K/K, C/C); supports 500 Mbps per data pin with DDR interface - matches OC-192/STM-64 line rate buffering needs
Read Latency Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH); determines minimum controller pipeline depth for timing closure
Core Supply (VDD) 1.8 V ±0.1 V; requires tight-regulation LDO to avoid timing violation or bit errors in high-speed operation
I/O Supply (VDDQ) 1.4 V to 1.8 V; supports interoperability with 1.5 V or 1.8 V FPGA I/O banks without level shifters
Burst Length Two-word fixed burst; delivers 72 bits per access - optimized for ATM cell or Ethernet frame segment handling
Package 165-ball FBGA (13 × 15 × 1.4 mm); 0.8 mm ball pitch enables dense routing in multi-SRAM memory banks

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs Sampled on rising edge of K clock; 36-bit parallel path for full-word writes - eliminates partial-word overhead in burst transfers
Q[35:0] Synchronous read data outputs Driven on rising edges of C/C clocks; tristated when RPS is deasserted - prevents bus contention in multi-device systems
RPS / WPS Read/Write port select (active LOW) Enables independent port activation; allows interleaved read/write scheduling without shared control logic
BWS[3:0] Byte write select (active LOW) Four independent 9-bit byte lanes; enables selective update of sub-word fields (e.g., CRC field only) without full-word rewrite
K / K, C / C Differential input clocks K/K latch addresses/data; C/C clock outputs - dual-clock domain eliminates skew-induced setup/hold violations
CQ / CQ Echo clocks (output-referenced) Free-running copies of C/C, synchronized to output timing - simplifies FPGA IDELAY/ODELAY calibration for >400 Mbps capture
DOFF Read latency mode control HIGH → 1.5-cycle latency (QDR II mode); LOW → 1-cycle latency (QDR I compatibility) - impacts controller state machine design

Key Features

Feature Design Value
Separate read/write ports Eliminates bus turnaround delay - enables sustained 500 MB/s bidirectional bandwidth in packet forwarding engines
Two-word DDR burst Delivers 72 bits per clock cycle - matches 32-bit+16-bit or 24-bit+24-bit aligned protocol headers and payloads
JTAG 1149.1 boundary scan Enables in-system verification of all 165 balls - critical for production test coverage in high-density telecom PCBs
Programmable drive strength HSTL-compliant output buffers with adjustable impedance - reduces signal integrity margin loss across varying trace lengths
Variable VDDQ support 1.4–1.8 V I/O range - allows direct interfacing with Xilinx Virtex-7 or Intel Stratix V FPGA banks without external level shifters

Applications

Packet Buffering in Switch ASICs High-Speed FPGA Co-Processor Memory

Use Scenario: Storing ingress/egress packet queues in Layer 2/L3 switches with 10 GbE uplinks.

IC Role / Device Role / Timing Role: Dedicated QDR II SRAM providing zero-wait-state concurrent read/write access for real-time queue management.

Use Value: 500 MB/s sustained bandwidth ensures no packet loss under full line-rate traffic; echo clocks simplify timing closure with ASIC PHY interfaces.

Use Scenario: Offloading packet classification and deep packet inspection tasks from CPU to FPGA-accelerated datapath.

IC Role / Device Role / Timing Role: High-throughput memory buffer between FPGA fabric and network interface controller (NIC).

Use Value: 1M × 36 organization aligns with 32-bit+parity or 24-bit+12-bit metadata formats; DOFF-selectable latency adapts to FPGA pipeline depth.

Telecom Line Card Buffering Optical Transport Network (OTN) Framing

Use Scenario: Holding SONET/SDH STS-192 or OTU-2 frames during multiplexing/demultiplexing on line cards.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory for frame assembly/disassembly buffers.

Use Value: 250 MHz operation meets OC-192 (9.953 Gbps) timing budgets; separate RPS/WPS enables seamless frame boundary crossing.

Use Scenario: Storing OTN overhead bytes (SM, PM, TCM) and payload mapping tables in DWDM transponders.

IC Role / Device Role / Timing Role: Synchronous SRAM serving as configuration and status register bank with atomic read-modify-write capability.

Use Value: Byte write selects (BWS[3:0]) allow updating individual 9-bit overhead fields without corrupting adjacent bytes - essential for error-free OPUk framing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36120 1M × 36, 200 MHz max, 2.5 V core, HSTL-I I/O, no echo clocks Lacks CQ/CQ; requires tighter board-level skew control and higher power (2.5 V vs. 1.8 V) Select when legacy 2.5 V system voltage is fixed and echo clock simplification is not required
ISSI IS61WV102436B 1M × 36, 166 MHz max, 3.3 V core/I/O, asynchronous interface, no DDR or burst No concurrent ports, no DDR, no PLL - 60% lower bandwidth and incompatible timing model Only suitable for cost-sensitive, non-real-time buffering where latency and throughput are secondary

Compared with IDT72T36120 and IS61WV102436B, CY7C1414KV18 delivers 25% higher bandwidth at half the core voltage, with echo clocks reducing FPGA timing closure effort by eliminating manual deskew calibration - making it optimal for new 10G+ telecom designs.

Availability

CY7C1414KV18 is available at Aetrix Electronics and suitable for packet buffering in switch ASICs, FPGA co-processor memory subsystems, and telecom line card applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY7C1414KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1414KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for ultra-low-latency, high-bandwidth memory subsystems in networking equipment where deterministic timing and concurrent access are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1414KV18?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency (standard QDR II operation); when LOW, it reduces latency to 1 cycle (QDR I compatibility mode). This selection directly affects the number of pipeline stages required in the memory controller and must be set before initialization. The pin is sampled synchronously on the rising edge of K during power-up or reset.

Can CY7C1414KV18 operate with only a single clock source?

Yes - CY7C1414KV18 supports single-clock-domain operation by tying K to C and K to C, allowing all timing to reference one differential clock pair. In this mode, echo clocks (CQ/CQ) derive from K/K instead of C/C, and output data is driven on K/K edges. However, dual-clock operation is recommended for optimal skew management in multi-device systems.

How does the BWS[3:0] signal enable byte-level writes?

BWS[3:0] are active-LOW byte write selects controlling four independent 9-bit lanes: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. When a BWS bit is deasserted (HIGH), its corresponding 9-bit byte is ignored during write - preserving existing data. This enables atomic updates of protocol-specific fields (e.g., TCP checksum) without full-word read-modify-write cycles.

Is JTAG boundary scan supported on CY7C1414KV18, and how is it enabled?

Yes - CY7C1414KV18 fully complies with IEEE 1149.1 (JTAG) and includes dedicated TDI, TDO, TCK, and TMS pins. JTAG is always enabled at power-on; no configuration is needed. The boundary scan chain covers all 165 balls and supports instruction register loading, data register access, and IDCODE reading - verified in the official datasheet revision *O, pages 13–16.

CY7C1414KV18-250BZI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1414KV18-250BZI FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1414KV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1414KV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414KV18-250BZI is usually 5 days.

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4.How is shipping managed for CY7C1414KV18-250BZI?

CY7C1414KV18-250BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1414KV18-250BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1414KV18-250BZI?

For technical support, including CY7C1414KV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1414KV18-250BZI requirements.

6.How does Aetrix verify that CY7C1414KV18-250BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1414KV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414KV18-250BZI meets industry standards.

7.What is the process for return or replacement of CY7C1414KV18-250BZI?

All CY7C1414KV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414KV18-250BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1414KV18-250BZI part is unused and in its original packaging.

Return procedure for CY7C1414KV18-250BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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