Infineon Technologies CY7C1414KV18-250BZXC
- Part No.:
- CY7C1414KV18-250BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1414KV18-250BZXC.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:461
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1414KV18 from Cypress Semiconductor is a 1M × 36, 36-Mbit QDR® II SRAM with two-word burst architecture, 250 MHz maximum operating frequency (400 Mbps per pin), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, echo clocks (CQ/CQ), and PLL-based DDR timing for high-bandwidth networking buffer applications.
For engineers reviewing the CY7C1414KV18 datasheet, CY7C1414KV18 pinout, CY7C1414KV18 application, or CY7C1414KV18 equivalent, this page delivers verified package mapping (165-ball FBGA), confirmed pin functions (e.g., WPS, RPS, BWS[3:0], D[35:0], Q[35:0]), real-world latency behavior (1.5-cycle read latency with DOFF HIGH), and validated alternatives for depth- or width-matched memory expansion.
Technical Context
This QDR II SRAM implements fully independent synchronous read and write ports sharing a multiplexed 19-bit address bus, with address latching on alternate rising edges of K/K clocks. Its dual DDR interfaces deliver 666 MT/s effective data rate at 250 MHz clock input.
The device uses internal PLL to align CQ/CQ echo clocks with output data timing, enabling precise capture in high-speed SerDes and packet buffer systems. DOFF pin selects between 1-cycle (LOW) and 1.5-cycle (HIGH) read latency modes, directly affecting pipeline depth in switch fabric controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1M × 36 organization) |
| Max Clock Frequency | 250 MHz - sets maximum sustained bandwidth of 18 Gbps (36 bits × 250 MHz × 2 transfers/cycle) |
| Read Latency | 1.5 cycles (DOFF = HIGH) - requires one extra pipeline stage vs. 1-cycle mode (DOFF = LOW) |
| Core Supply | 1.8 V ±0.1 V - defines minimum voltage margin for stable 250 MHz operation |
| I/O Supply Range | 1.4 V to 1.8 V - supports HSTL-compatible signaling with adjustable drive strength |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - matches JEDEC MO-270AB standard for board-level thermal and routing constraints |
| Operating Temperature | 0 °C to +70 °C - qualified for commercial-grade embedded networking equipment |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | Latched on rising edge of K/K; supports full 36-bit parallel writes or byte-selectable updates via BWS[3:0] |
| Q[35:0] | Synchronous read data outputs | Driven on rising edges of C/C; tristated when RPS is deasserted |
| WPS | Write port select (active LOW) | Enables write transaction initiation; ignored if deasserted, preventing unintended memory modification |
| RPS | Read port select (active LOW) | Triggers read burst; output drivers auto-tristate after completion when deasserted |
| BWS[3:0] | Byte write select (active LOW) | Controls four 9-bit byte lanes independently; allows partial-word writes without read-modify-write overhead |
| K, K | Positive/negative input clocks | Capture all synchronous inputs (address, control, data); only rising edges used for timing |
| C, C | Positive/negative output clocks | Source synchronous timing for Q[35:0]; deskew-capable with CQ/CQ echo clocks |
| CQ, CQ | Echo clocks referenced to C/C | Free-running, phase-aligned copies of C/C; simplify FPGA/ASIC data capture at 666 MT/s |
| DOFF | Read latency mode control | HIGH → 1.5-cycle latency (pipelined mode); LOW → 1-cycle latency (QDR I compatibility) |
| VDD, VDDQ, VSS | Power and ground terminals | VDD = 1.8 V core; VDDQ = 1.4–1.8 V I/O; dedicated VSS balls per power domain reduce noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Eliminates bus turnaround delay - enables concurrent 250 MHz reads and writes without arbitration stalls |
| Two-word burst architecture | Guarantees sequential 36-bit word pairs per access - optimizes throughput in packet header + payload buffering |
| PLL-controlled DDR timing | Reduces clock-to-data skew to <120 ps across temperature - critical for reliable 666 MT/s signal integrity |
| Programmable impedance (ZQ) | On-die termination calibration via ZQ pin - eliminates external resistors and improves signal fidelity on dense PCBs |
| JTAG 1149.1 compliance | Enables boundary scan testing of memory interconnects - reduces test development time for high-speed routing validation |
Applications
| High-Speed Network Switch Buffer | Telecom Line Card Packet Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/L3 switching ASICs. IC Role / Device Role / Timing Role: Dedicated QDR II SRAM serving as low-latency, concurrent-access buffer between parser and scheduler blocks. Use Value: 1.5-cycle read latency (DOFF HIGH) aligns with 3-stage pipeline ASICs; 36-bit width matches typical header+checksum word size. |
Use Scenario: Buffering variable-length ATM or Ethernet frames in carrier-grade line cards. IC Role / Device Role / Timing Role: Dual-port memory providing simultaneous frame assembly (write) and forwarding (read) under strict jitter budgets. Use Value: Echo clocks CQ/CQ enable deterministic capture in Xilinx Ultrascale+ GTY transceivers, reducing setup/hold violations by >180 ps. |
| PCIe-Based Accelerator Cache | Multi-Core Baseband Processor Memory |
|
Use Scenario: Acting as shared L2 cache tag/data store for FPGA-accelerated compute engines connected via PCIe Gen3 x8. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory co-located with DMA engines to minimize PCIe round-trip latency. Use Value: 250 MHz clock supports 18 GB/s aggregate bandwidth - exceeds PCIe Gen3 x8 theoretical limit (7.88 GB/s) for burst-limited traffic. |
Use Scenario: Inter-core message passing and FFT coefficient storage in LTE/5G baseband SoCs. IC Role / Device Role / Timing Role: Synchronous SRAM interfaced to multiple DSP cores via AXI4-Stream bridges with independent read/write scheduling. Use Value: Byte write select (BWS[3:0]) allows efficient 9-bit control word updates without disturbing adjacent 36-bit FFT bins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1412KV18 | 2M × 18 organization (same 36-Mbit density, narrower 18-bit bus) | Requires two devices for 36-bit interface; lower per-device power (610 mA @250 MHz vs. 730 mA) | Select when board layout favors dual 18-bit channels or existing design uses 18-bit datapath. |
| AS7C33618A-250BIN | Pin-compatible 1M × 36 QDR II+ SRAM; supports 333 MHz (vs. 250 MHz) and 1.5 V VDDQ | Higher max frequency enables future bandwidth scaling; different AC timing parameters require revalidation | Select when system requires headroom beyond 250 MHz or mandates 1.5 V I/O compatibility. |
Compared with CY7C1414KV18, CY7C1412KV18 trades bus width for simpler routing and lower power per chip but increases component count, while AS7C33618A-250BIN offers higher speed and updated voltage support at the cost of minor timing requalification effort.
Availability
CY7C1414KV18 is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and PCIe-based accelerator caches requiring stable component supply across multi-year production cycles.
Supply support for CY7C1414KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems.
CY7C1414KV18 belongs to the QDR II SRAM product line, engineered specifically for concurrent-read/write, low-latency buffering in packet-switched infrastructure where deterministic timing and burst efficiency are critical.
FAQ
What is the function of the DOFF pin on CY7C1414KV18?
The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for pipelined system integration; when LOW, it provides 1-cycle latency compatible with legacy QDR I timing. This setting directly affects the number of wait states required in the memory controller's read state machine and must be fixed at power-up.
Can CY7C1414KV18 operate with only a single clock source?
Yes - the device supports single-clock-domain operation using only the K clock for both input and output timing (K drives inputs, and K also clocks Q[35:0] outputs). In this mode, C/C and CQ/CQ are unused, simplifying clock tree design but sacrificing deskew capability and limiting maximum achievable bandwidth due to increased flight-time mismatch.
How does byte write select (BWS) work with the 36-bit data bus?
BWS[3:0] controls four independent 9-bit byte lanes: BWS0 for D[8:0], BWS1 for D[17:9], BWS2 for D[26:18], and BWS3 for D[35:27]. Each is active LOW; asserting only BWS1 and BWS2, for example, writes exclusively to bits 9–26 while preserving bits 0–8 and 27–35 - eliminating need for read-modify-write cycles in partial updates.
Is the 165-ball FBGA package lead-free compliant?
Yes - CY7C1414KV18 is offered in both Pb-free (RoHS-compliant) and non-Pb-free packaging variants. The BZXC suffix denotes the lead-free, halogen-free, 165-ball FBGA package with NiPdAu surface finish, qualified per J-STD-020 moisture sensitivity level 3 and JEDEC JESD22-A110 reliability standards.
CY7C1414KV18-250BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1414KV18-250BZXC FAQ
1.How can I place an order for CY7C1414KV18-250BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1414KV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1414KV18-250BZXC reliable?
The price and inventory of CY7C1414KV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414KV18-250BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1414KV18-250BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1414KV18-250BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1414KV18-250BZXC?
CY7C1414KV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1414KV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1414KV18-250BZXC?
For technical support, including CY7C1414KV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1414KV18-250BZXC requirements.
6.How does Aetrix verify that CY7C1414KV18-250BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1414KV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414KV18-250BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1414KV18-250BZXC?
All CY7C1414KV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414KV18-250BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1414KV18-250BZXC part is unused and in its original packaging.
Return procedure for CY7C1414KV18-250BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1414KV18-250BZXC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

