Infineon Technologies CY7C1414KV18-250BZXCT

Overview

CY7C1414KV18-250BZXCT from Cypress Semiconductor is a 1M × 36, 36-Mbit QDR® II SRAM with two-word burst architecture, 250 MHz maximum clock frequency (K/K), 1.8 V core supply, 1.4–1.8 V I/O supply, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers concurrent read/write operations via independent ports, DDR interfaces on both ports (500 Mbps per pin), and echo clocks (CQ/CQ) for high-speed data capture in networking line cards and packet buffers.

For engineers reviewing the CY7C1414KV18-250BZXCT datasheet, CY7C1414KV18-250BZXCT pinout, CY7C1414KV18-250BZXCT application, or CY7C1414KV18-250BZXCT equivalent, key selection criteria include 1M × 36 organization, 250 MHz K-clock timing, DOFF-controlled 1-cycle vs. 1.5-cycle read latency, BWS[3:0] byte write select granularity, and 165-ball FBGA mechanical compatibility with high-density memory subsystems.

Technical Context

This QDR II SRAM implements fully synchronous, pipelined operation with separate K/K input clocks for address/data capture and C/C output clocks for data launch-enabling precise DDR timing without bus turnaround. Its dual-port architecture supports true concurrent read and write transactions to the same memory array, with each access delivering two sequential 36-bit words.

The device integrates an internal PLL for accurate data placement, JTAG 1149.1 boundary scan for testability, and programmable HSTL output drivers. Read latency is configurable via DOFF: LOW yields 1-cycle latency (like QDR I), HIGH enables 1.5-cycle latency optimized for higher-frequency operation with relaxed setup/hold margins.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1414KV18-250BZXCT, the -250AXI offers identical functionality in commercial temp grade with legacy finish, while AS7C33618B-250BIN provides higher signal integrity features at the cost of layout redesign - making the BZXCT optimal for existing Pb-free telecom designs requiring guaranteed availability and footprint compatibility.

Availability

CY7C1414KV18-250BZXCT is available at Aetrix Electronics and suitable for high-speed packet buffering, network line card memory, telecom baseband processing, and FPGA-based protocol acceleration requiring stable component supply across extended temperature and Pb-free compliance.

Supply support for CY7C1414KV18-250BZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

The QDR® II SRAM product line targets high-bandwidth, low-latency memory subsystems in packet infrastructure - specifically engineered to eliminate bus turnaround and support concurrent access in ASIC/FPGA-based line cards and switches.

FAQ

What is the function of the DOFF pin on CY7C1414KV18-250BZXCT?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency (standard QDR II operation), optimizing timing margins at 250 MHz; when LOW, it selects 1-cycle latency for backward compatibility with QDR I controllers. This setting directly affects the C/C clock-to-Q[35:0] valid timing and must be fixed at power-up.

How does byte write select (BWS[3:0]) operate in CY7C1414KV18-250BZXCT?

BWS[3:0] are active-low inputs that independently enable writing to four 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]). During a write cycle, only bytes with asserted BWS signals are updated; unselected bytes retain prior contents. All BWS signals are sampled synchronously with D[35:0] on the rising edge of K, enabling atomic partial-word writes without read-modify-write sequences.

Can CY7C1414KV18-250BZXCT operate with a single clock domain?

Yes - the device supports single-clock-mode operation where K and C are tied together (and K and C tied together), simplifying system clocking. In this mode, data is launched on Q[35:0] using K/K instead of C/C, and echo clocks CQ/CQ track K/K. However, deskew capability is lost, and timing margins tighten; dual-clock mode is recommended for >200 MHz operation per the datasheet AC specifications.

What is the purpose of the echo clocks CQ and CQ?

CQ and CQ are free-running, source-synchronous echo copies of C and C, respectively, generated internally and output with minimal skew relative to Q[35:0]. They provide a deterministic timing reference for the receiving controller to latch read data, eliminating need for complex board-level trace length matching - critical for reliable 500 Mbps DDR capture in multi-drop memory channels.