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Infineon Technologies CY7C1414KV18-250BZXIT

Part No.:
CY7C1414KV18-250BZXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1414KV18-250BZXIT.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,373

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Product details

Overview

CY7C1414KV18-250BZXIT from Cypress Semiconductor is a 1M × 36, 36-Mbit QDR® II SRAM with two-word burst architecture, 250 MHz maximum clock frequency (K/K), 1.8 V core supply, 1.4–1.8 V I/O supply, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers concurrent read/write operations via independent ports, supports echo clocks (CQ/CQ) for timing margin recovery, and enables depth expansion using RPS/WPS and four byte write selects (BWS[3:0]). Used in high-speed packet buffering for network line cards.

For engineers reviewing the CY7C1414KV18-250BZXIT datasheet, CY7C1414KV18-250BZXIT pinout, CY7C1414KV18-250BZXIT application, or CY7C1414KV18-250BZXIT equivalent, key selection criteria include 1-cycle vs. 1.5-cycle read latency (DOFF-controlled), HSTL-compatible 36-bit DDR I/O, PLL-based data placement accuracy, and FBGA thermal/mechanical compatibility with multi-chip memory subsystems.

Technical Context

This QDR II SRAM implements fully synchronous, pipelined access with separate read and write address/data paths latched on alternating rising edges of K/K clocks. Its dual-clock domain (K/K for inputs, C/C for outputs) eliminates bus turnaround and enables true concurrent transactions at up to 500 MT/s effective bandwidth.

The device uses internal self-timed write circuitry and supports programmable impedance via ZQ pin. DOFF pin selects between 1-cycle (LOW) and 1.5-cycle (HIGH) read latency modes, while echo clocks CQ/CQ align with C/C to simplify source-synchronous capture in FPGA- or ASIC-based controllers.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density36 Mbit (1M × 36 organization)
Max Clock Frequency250 MHz (K/K input clocks; 500 MT/s DDR interface)
Read LatencySelectable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH)
Core Supply1.8 V ±0.1 V - defines minimum operating voltage for internal logic and array stability
I/O Supply Range1.4 V to 1.8 V - supports HSTL Class I/II and compatible termination schemes
Burst LengthTwo-word fixed burst - delivers two consecutive 36-bit words per access, optimizing throughput for sequential packet payloads
Package165-ball FBGA (13 × 15 × 1.4 mm) - provides 0.8 mm ball pitch, thermal performance suitable for multi-SRAM stacks

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free (RoHS-compliant) construction.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data inputs36-bit parallel data sampled on rising edge of K/K; supports byte-level masking via BWS[3:0]
Q[35:0]Synchronous read data outputs36-bit DDR outputs driven on rising edges of C/C; tristated when RPS is deasserted
RPS / WPSRead/Write port selectActive-low enables port-specific access; allows independent control of read and write pipelines
BWS[3:0]Byte write selectFour independent active-low signals controlling 8-bit segments of D[35:0]; enables partial writes without read-modify-write
K / KInput clock pairRising edges latch all synchronous inputs (address, data, controls); K is positive, K is negative
C / COutput clock pairRising edges drive Q[35:0]; used with CQ/CQ for deskewed source-synchronous capture
CQ / CQEcho clocksFree-running copies of C/C, synchronized to output clock domain; reduce timing uncertainty in high-speed receivers
DOFFRead latency mode controlHigh = 1.5-cycle latency (QDR II mode); Low = 1-cycle latency (QDR I compatibility mode)
ZQImpedance calibration referenceConnects to external 240 Ω resistor to ground for on-die termination calibration of HSTL drivers

Key Features

FeatureDesign Value
Independent read/write portsEnables simultaneous access without bus contention - critical for full-duplex packet buffering in switches/routers
Two-word burst + DDR I/ODelivers 500 MT/s effective bandwidth on 36-bit bus - matches 10G/25G Ethernet frame payload rates
Programmable read latency (DOFF)Allows system-level trade-off between timing margin (1.5-cycle) and pipeline depth (1-cycle) without hardware change
Echo clocks (CQ/CQ)Eliminates need for board-level clock routing compensation - simplifies layout and improves setup/hold margins
JTAG 1149.1 complianceSupports boundary scan testing across multi-SRAM modules - essential for high-reliability telecom PCB validation

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM serving as first-level packet buffer with concurrent read/write capability.

Use Value: Eliminates bus turnaround delay via separate ports, enabling full 500 MT/s utilization for back-to-back packet processing.

Use Scenario: Buffering ATM or SONET cell data in OC-192/STM-64 line interface cards requiring deterministic access timing.

IC Role / Device Role / Timing Role: QDR II SRAM providing synchronized, jitter-tolerant memory interface to framer ASICs.

Use Value: Echo clocks (CQ/CQ) and PLL-based data placement ensure reliable capture at 250 MHz clock rate under temperature/voltage variation.

Baseband Processing MemoryFPGA Co-Processor Cache

Use Scenario: Temporary storage of OFDM symbol data in LTE/5G baseband units before FFT/IFFT processing.

IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing directly with DSP/FPGA fabric for low-overhead data streaming.

Use Value: Two-word burst matches typical symbol size granularity; 1.8 V core reduces power vs. older 3.3 V QDR I parts.

Use Scenario: Off-chip cache for Xilinx Ultrascale+ or Intel Stratix 10 FPGA designs handling real-time video analytics pipelines.

IC Role / Device Role / Timing Role: High-throughput memory extension supporting parallel pixel block transfers between FPGA logic and external memory subsystems.

Use Value: 36-bit width and HSTL I/O match FPGA memory controller pinouts; FBGA package enables dense, thermally balanced placement near FPGA BGA.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C36256P-250BIN256-Mbit (8M × 36) QDR II+, 250 MHz, 1.5 V core, 165-ball FBGA - higher density, lower core voltage, no DOFF latency selectionRequires redesign for larger address space; lacks 1-cycle latency mode for legacy QDR I compatibilityChoose for new designs needing >36 Mbit capacity and lower power; avoid if DOFF flexibility or exact footprint matching is required
IS45S32800J-25BLI256-Mbit (8M × 32) QDR II+, 250 MHz, 1.5 V core, 165-ball FBGA - 32-bit width, different BWS mapping, no echo clocksNeeds data path rework for 32-bit interface; lacks CQ/CQ support, increasing timing closure effortConsider only if 32-bit bus width is acceptable and echo clock dependency is removed from system architecture

Compared with AS7C36256P-250BIN and IS45S32800J-25BLI, CY7C1414KV18-250BZXIT offers unique DOFF-selectable latency and integrated echo clocks - both critical for maintaining timing margin in legacy or mixed-vendor systems where clock skew cannot be fully compensated in FPGA logic.

Availability

CY7C1414KV18-250BZXIT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing memory, and FPGA co-processor cache applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1414KV18-250BZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1414KV18 belongs to the QDR II SRAM product line, designed specifically for high-bandwidth, low-latency buffering in networking and telecommunications infrastructure where deterministic timing and concurrent access are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1414KV18-250BZXIT?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures the device for 1.5-cycle QDR II latency with improved timing margin; when LOW, it enables 1-cycle QDR I-compatible latency. This setting is sampled synchronously on the rising edge of K and remains active until changed, allowing runtime adaptation to system timing constraints without reset.

How does the ZQ pin operate in CY7C1414KV18-250BZXIT?

The ZQ pin connects to an external 240 Ω resistor to ground and initiates on-die impedance calibration for HSTL output drivers. Calibration occurs automatically during power-up and can be triggered manually via JTAG instruction. It ensures consistent driver strength across voltage and temperature, critical for signal integrity on high-speed 36-bit DDR buses.

Can CY7C1414KV18-250BZXIT operate with only one clock (K) instead of K/K?

Yes - the device supports single-clock mode where K serves as both positive and negative clock input. In this configuration, C and C must be tied together and driven by K, and CQ/CQ derive from K. However, dual-clock operation is required to achieve full timing margin benefits and echo clock functionality; single-clock mode sacrifices deskew capability and reduces maximum reliable frequency.

What is the purpose of BWS[3:0] in CY7C1414KV18-250BZXIT?

BWS[3:0] are four independent byte write select signals that enable selective 8-bit writes within the 36-bit D[35:0] bus. Each BWS bit controls a specific 8-bit segment (BWS0: D[7:0], BWS1: D[15:8], BWS2: D[23:16], BWS3: D[31:24]); D[35:32] is always written when any BWS is active. This avoids read-modify-write cycles and reduces power in partial-update scenarios like header field edits.

CY7C1414KV18-250BZXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1414KV18-250BZXIT FAQ

1.How can I place an order for CY7C1414KV18-250BZXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1414KV18-250BZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1414KV18-250BZXIT reliable?

The price and inventory of CY7C1414KV18-250BZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414KV18-250BZXIT is usually 5 days.

3.What payment methods are accepted for CY7C1414KV18-250BZXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1414KV18-250BZXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1414KV18-250BZXIT?

CY7C1414KV18-250BZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1414KV18-250BZXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1414KV18-250BZXIT?

For technical support, including CY7C1414KV18-250BZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1414KV18-250BZXIT requirements.

6.How does Aetrix verify that CY7C1414KV18-250BZXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1414KV18-250BZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414KV18-250BZXIT meets industry standards.

7.What is the process for return or replacement of CY7C1414KV18-250BZXIT?

All CY7C1414KV18-250BZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414KV18-250BZXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1414KV18-250BZXIT part is unused and in its original packaging.

Return procedure for CY7C1414KV18-250BZXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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