Infineon Technologies CY7C1414KV18-250BZXIT
- Part No.:
- CY7C1414KV18-250BZXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1414KV18-250BZXIT.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1414KV18-250BZXIT from Cypress Semiconductor is a 1M × 36, 36-Mbit QDR® II SRAM with two-word burst architecture, 250 MHz maximum clock frequency (K/K), 1.8 V core supply, 1.4–1.8 V I/O supply, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers concurrent read/write operations via independent ports, supports echo clocks (CQ/CQ) for timing margin recovery, and enables depth expansion using RPS/WPS and four byte write selects (BWS[3:0]). Used in high-speed packet buffering for network line cards.
For engineers reviewing the CY7C1414KV18-250BZXIT datasheet, CY7C1414KV18-250BZXIT pinout, CY7C1414KV18-250BZXIT application, or CY7C1414KV18-250BZXIT equivalent, key selection criteria include 1-cycle vs. 1.5-cycle read latency (DOFF-controlled), HSTL-compatible 36-bit DDR I/O, PLL-based data placement accuracy, and FBGA thermal/mechanical compatibility with multi-chip memory subsystems.
Technical Context
This QDR II SRAM implements fully synchronous, pipelined access with separate read and write address/data paths latched on alternating rising edges of K/K clocks. Its dual-clock domain (K/K for inputs, C/C for outputs) eliminates bus turnaround and enables true concurrent transactions at up to 500 MT/s effective bandwidth.
The device uses internal self-timed write circuitry and supports programmable impedance via ZQ pin. DOFF pin selects between 1-cycle (LOW) and 1.5-cycle (HIGH) read latency modes, while echo clocks CQ/CQ align with C/C to simplify source-synchronous capture in FPGA- or ASIC-based controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1M × 36 organization) |
| Max Clock Frequency | 250 MHz (K/K input clocks; 500 MT/s DDR interface) |
| Read Latency | Selectable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) |
| Core Supply | 1.8 V ±0.1 V - defines minimum operating voltage for internal logic and array stability |
| I/O Supply Range | 1.4 V to 1.8 V - supports HSTL Class I/II and compatible termination schemes |
| Burst Length | Two-word fixed burst - delivers two consecutive 36-bit words per access, optimizing throughput for sequential packet payloads |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - provides 0.8 mm ball pitch, thermal performance suitable for multi-SRAM stacks |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free (RoHS-compliant) construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | 36-bit parallel data sampled on rising edge of K/K; supports byte-level masking via BWS[3:0] |
| Q[35:0] | Synchronous read data outputs | 36-bit DDR outputs driven on rising edges of C/C; tristated when RPS is deasserted |
| RPS / WPS | Read/Write port select | Active-low enables port-specific access; allows independent control of read and write pipelines |
| BWS[3:0] | Byte write select | Four independent active-low signals controlling 8-bit segments of D[35:0]; enables partial writes without read-modify-write |
| K / K | Input clock pair | Rising edges latch all synchronous inputs (address, data, controls); K is positive, K is negative |
| C / C | Output clock pair | Rising edges drive Q[35:0]; used with CQ/CQ for deskewed source-synchronous capture |
| CQ / CQ | Echo clocks | Free-running copies of C/C, synchronized to output clock domain; reduce timing uncertainty in high-speed receivers |
| DOFF | Read latency mode control | High = 1.5-cycle latency (QDR II mode); Low = 1-cycle latency (QDR I compatibility mode) |
| ZQ | Impedance calibration reference | Connects to external 240 Ω resistor to ground for on-die termination calibration of HSTL drivers |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Enables simultaneous access without bus contention - critical for full-duplex packet buffering in switches/routers |
| Two-word burst + DDR I/O | Delivers 500 MT/s effective bandwidth on 36-bit bus - matches 10G/25G Ethernet frame payload rates |
| Programmable read latency (DOFF) | Allows system-level trade-off between timing margin (1.5-cycle) and pipeline depth (1-cycle) without hardware change |
| Echo clocks (CQ/CQ) | Eliminates need for board-level clock routing compensation - simplifies layout and improves setup/hold margins |
| JTAG 1149.1 compliance | Supports boundary scan testing across multi-SRAM modules - essential for high-reliability telecom PCB validation |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with strict latency budgets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM serving as first-level packet buffer with concurrent read/write capability. Use Value: Eliminates bus turnaround delay via separate ports, enabling full 500 MT/s utilization for back-to-back packet processing. | Use Scenario: Buffering ATM or SONET cell data in OC-192/STM-64 line interface cards requiring deterministic access timing. IC Role / Device Role / Timing Role: QDR II SRAM providing synchronized, jitter-tolerant memory interface to framer ASICs. Use Value: Echo clocks (CQ/CQ) and PLL-based data placement ensure reliable capture at 250 MHz clock rate under temperature/voltage variation. |
| Baseband Processing Memory | FPGA Co-Processor Cache |
Use Scenario: Temporary storage of OFDM symbol data in LTE/5G baseband units before FFT/IFFT processing. IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing directly with DSP/FPGA fabric for low-overhead data streaming. Use Value: Two-word burst matches typical symbol size granularity; 1.8 V core reduces power vs. older 3.3 V QDR I parts. | Use Scenario: Off-chip cache for Xilinx Ultrascale+ or Intel Stratix 10 FPGA designs handling real-time video analytics pipelines. IC Role / Device Role / Timing Role: High-throughput memory extension supporting parallel pixel block transfers between FPGA logic and external memory subsystems. Use Value: 36-bit width and HSTL I/O match FPGA memory controller pinouts; FBGA package enables dense, thermally balanced placement near FPGA BGA. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C36256P-250BIN | 256-Mbit (8M × 36) QDR II+, 250 MHz, 1.5 V core, 165-ball FBGA - higher density, lower core voltage, no DOFF latency selection | Requires redesign for larger address space; lacks 1-cycle latency mode for legacy QDR I compatibility | Choose for new designs needing >36 Mbit capacity and lower power; avoid if DOFF flexibility or exact footprint matching is required |
| IS45S32800J-25BLI | 256-Mbit (8M × 32) QDR II+, 250 MHz, 1.5 V core, 165-ball FBGA - 32-bit width, different BWS mapping, no echo clocks | Needs data path rework for 32-bit interface; lacks CQ/CQ support, increasing timing closure effort | Consider only if 32-bit bus width is acceptable and echo clock dependency is removed from system architecture |
Compared with AS7C36256P-250BIN and IS45S32800J-25BLI, CY7C1414KV18-250BZXIT offers unique DOFF-selectable latency and integrated echo clocks - both critical for maintaining timing margin in legacy or mixed-vendor systems where clock skew cannot be fully compensated in FPGA logic.
Availability
CY7C1414KV18-250BZXIT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing memory, and FPGA co-processor cache applications requiring stable component supply and long-term industrial availability.
Supply support for CY7C1414KV18-250BZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1414KV18 belongs to the QDR II SRAM product line, designed specifically for high-bandwidth, low-latency buffering in networking and telecommunications infrastructure where deterministic timing and concurrent access are mandatory.
FAQ
What is the function of the DOFF pin on CY7C1414KV18-250BZXIT?
The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures the device for 1.5-cycle QDR II latency with improved timing margin; when LOW, it enables 1-cycle QDR I-compatible latency. This setting is sampled synchronously on the rising edge of K and remains active until changed, allowing runtime adaptation to system timing constraints without reset.
How does the ZQ pin operate in CY7C1414KV18-250BZXIT?
The ZQ pin connects to an external 240 Ω resistor to ground and initiates on-die impedance calibration for HSTL output drivers. Calibration occurs automatically during power-up and can be triggered manually via JTAG instruction. It ensures consistent driver strength across voltage and temperature, critical for signal integrity on high-speed 36-bit DDR buses.
Can CY7C1414KV18-250BZXIT operate with only one clock (K) instead of K/K?
Yes - the device supports single-clock mode where K serves as both positive and negative clock input. In this configuration, C and C must be tied together and driven by K, and CQ/CQ derive from K. However, dual-clock operation is required to achieve full timing margin benefits and echo clock functionality; single-clock mode sacrifices deskew capability and reduces maximum reliable frequency.
What is the purpose of BWS[3:0] in CY7C1414KV18-250BZXIT?
BWS[3:0] are four independent byte write select signals that enable selective 8-bit writes within the 36-bit D[35:0] bus. Each BWS bit controls a specific 8-bit segment (BWS0: D[7:0], BWS1: D[15:8], BWS2: D[23:16], BWS3: D[31:24]); D[35:32] is always written when any BWS is active. This avoids read-modify-write cycles and reduces power in partial-update scenarios like header field edits.
CY7C1414KV18-250BZXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1414KV18-250BZXIT FAQ
1.How can I place an order for CY7C1414KV18-250BZXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1414KV18-250BZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1414KV18-250BZXIT reliable?
The price and inventory of CY7C1414KV18-250BZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414KV18-250BZXIT is usually 5 days.
3.What payment methods are accepted for CY7C1414KV18-250BZXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1414KV18-250BZXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1414KV18-250BZXIT?
CY7C1414KV18-250BZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1414KV18-250BZXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1414KV18-250BZXIT?
For technical support, including CY7C1414KV18-250BZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1414KV18-250BZXIT requirements.
6.How does Aetrix verify that CY7C1414KV18-250BZXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1414KV18-250BZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414KV18-250BZXIT meets industry standards.
7.What is the process for return or replacement of CY7C1414KV18-250BZXIT?
All CY7C1414KV18-250BZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414KV18-250BZXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1414KV18-250BZXIT part is unused and in its original packaging.
Return procedure for CY7C1414KV18-250BZXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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