Infineon Technologies CY7C1414KV18-300BZXC
- Part No.:
- CY7C1414KV18-300BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1414KV18-300BZXC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:133
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Product details
Overview
CY7C1414KV18 from Cypress Semiconductor is a 1M × 36, 36-Mbit QDR® II SRAM with two-word burst architecture, 333 MHz clock operation (666 MHz DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, echo clocks (CQ/CQ), and PLL-based timing control for high-speed networking buffer applications.
For engineers reviewing the CY7C1414KV18 datasheet, CY7C1414KV18 pinout, CY7C1414KV18 application, or CY7C1414KV18 equivalent, key selection criteria include its 1M × 36 organization, dual-clock DDR interface, DOFF-configurable 1- vs 1.5-cycle read latency, and 165-ball FBGA package compatibility with high-bandwidth packet buffering systems.
Technical Context
The CY7C1414KV18 implements a synchronous pipelined QDR II architecture with physically independent read and write data paths-eliminating bus turnaround delays. Its 19-bit address bus accesses a 512K × 36 memory array split across two internal banks, latched on alternating rising edges of K/K clocks.
Read and write operations use dedicated DDR interfaces: data transfers occur on both rising edges of C/C (read) and K/K (write), enabling full-duplex concurrent access. The integrated PLL aligns echo clocks (CQ/CQ) to output clocks for precise source-synchronous capture in 10 GbE and switch fabric designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 1M × 36 (36 Mbit total); enables single-access retrieval of full 36-bit wide data words for packet header + payload alignment |
| Max Clock Frequency | 333 MHz (K/K, C/C); supports 666 MT/s effective bandwidth per port in DDR mode |
| Read Latency | Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH); determines pipeline depth for timing-critical control logic |
| Supply Voltages | Core VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4–1.8 V; allows interoperability with 1.5 V or 1.8 V system I/O rails |
| Burst Length | Fixed two-word burst per access; delivers sequential 36-bit words on consecutive clock edges without address re-latching |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm); provides 36 data, 19 address, 4 byte-write select, and dual-clock I/O in space-constrained switch ASIC interfaces |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Write data inputs | 36-bit synchronous input bus sampled on rising edges of K/K; supports full-width parallel writes without multiplexing |
| Q[35:0] | Read data outputs | 36-bit DDR output bus driven on rising edges of C/C; tristated when RPS is deasserted |
| A[18:0] | Address inputs | 19-bit multiplexed address bus latched separately for read (K) and write (K) ports |
| BWS[3:0] | Byte write selects | Four active-low signals controlling 9-bit byte lanes; enables partial-word updates without read-modify-write overhead |
| C, C | Output clock pair | Differential clock inputs for read data capture; used with CQ/CQ for flight-time deskewing in multi-device systems |
| K, K | Input clock pair | Differential clocks for all synchronous inputs (address, data, controls); rising edges drive internal registers |
| CQ, CQ | Echo clocks | Free-running output clocks synchronized to C/C; provide source-synchronous timing reference for external FPGA/ASIC capture logic |
| DOFF | Read latency control | Active-high input selecting 1-cycle (LOW) or 1.5-cycle (HIGH) read latency; configures pipeline stage count |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Enables true concurrent read and write operations-no bus contention or turnaround delay in full-duplex traffic buffers |
| Two-word DDR burst | Delivers two contiguous 36-bit words per access at 666 MT/s, matching typical 72-bit packet header+payload widths |
| Programmable read latency (DOFF) | Allows dynamic adjustment between 1-cycle (low-latency control plane) and 1.5-cycle (higher-frequency timing closure) modes |
| Integrated PLL and echo clocks | Eliminates need for external clock synthesizers; CQ/CQ provide trace-matched timing references for reliable >500 MHz data capture |
| JTAG 1149.1 boundary scan | Supports IEEE-compliant test access for interconnect validation in dense BGA layouts without physical probe points |
Applications
| High-Speed Network Switch Buffers | Telecom Line Card Packet Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in 10/25/40 GbE switch ASICs with real-time forwarding decisions. IC Role / Device Role / Timing Role: Dual-port SRAM acting as a zero-turnaround first-in-first-out (FIFO) buffer between line-rate ingress parser and egress scheduler logic. Use Value: Concurrent read/write capability eliminates serialization bottlenecks, enabling full line-rate throughput at 333 MHz clock with deterministic 1-cycle latency path. | Use Scenario: Buffering variable-length IP packets in carrier-grade optical transport equipment with strict jitter and latency budgets. IC Role / Device Role / Timing Role: High-bandwidth memory subsystem providing burst-aligned storage for packet assembly/disassembly engines in OTN framer ICs. Use Value: Two-word burst mode matches typical 64–128 byte packet segment sizes, reducing address bus toggling and power consumption by 50% versus single-word devices. |
| Baseband Processing in 5G Radio Units | Test Equipment Pattern Memory |
Use Scenario: Temporary storage of IQ sample blocks during digital predistortion (DPD) and channel estimation in massive MIMO radio units. IC Role / Device Role / Timing Role: Low-latency, high-throughput memory interfacing directly with FPGA-based signal processing pipelines operating at 300+ MHz. Use Value: Echo clocks (CQ/CQ) enable source-synchronous capture with <±50 ps skew tolerance-critical for maintaining EVM integrity in 5G NR waveforms. | Use Scenario: Storing stimulus/response patterns in automated test equipment (ATE) for high-pin-count SoC validation at >500 MHz vector rates. IC Role / Device Role / Timing Role: Deterministic, jitter-free pattern memory feeding parallel pin electronics (PE) channels via DDR interface. Use Value: Programmable DOFF setting allows latency tuning to match ATE controller timing margins, improving test coverage for edge-case timing violations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C362000B-333BIN | 36-Mbit QDR II+, 333 MHz, 1.5 V core, 165-ball FBGA; lacks echo clocks and DOFF latency control | Requires external clock deskew circuitry; unsuitable for ultra-low-jitter capture without added components | Select when cost sensitivity outweighs need for source-synchronous timing and latency flexibility |
| MT47H64M16HR-37E:H | 1 Gbit DDR2 SDRAM, 375 MHz, 1.8 V, 84-ball FBGA; asynchronous command interface, no dual-port architecture | Cannot support true concurrent read/write; requires command scheduling and refresh management | Select only for non-real-time buffering where bandwidth > latency and cost-per-bit dominate |
Compared with AS7C362000B-333BIN and MT47H64M16HR-37E:H, the CY7C1414KV18 uniquely delivers deterministic 1-cycle latency, echo-clock–assisted capture, and true dual-port concurrency-making it irreplaceable in line-rate packet buffering and 5G baseband timing-critical designs.
Availability
CY7C1414KV18 is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and 5G radio unit baseband processing requiring stable component supply and long-term lifecycle support.
Supply support for CY7C1414KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.
The QDR® II SRAM product line targets ultra-low-latency, high-bandwidth buffering in packet-switched infrastructure-optimized for deterministic timing, concurrent access, and source-synchronous data capture in ASIC/FPGA co-designs.
FAQ
What is the function of the DOFF pin on CY7C1414KV18?
The DOFF (Data Output OFFset) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin at maximum frequency; when LOW, it selects 1-cycle latency for minimal delay in time-critical control paths. This setting directly affects the number of internal pipeline stages before data appears on Q[35:0].
How does the CY7C1414KV18 handle byte-level writes?
It uses four active-low byte write select signals (BWS[3:0]), each controlling a 9-bit lane of the 36-bit D[35:0] bus. During a write, only lanes with asserted BWS signals update memory; unselected bytes retain prior values-enabling efficient partial-word updates without read-modify-write cycles.
Can CY7C1414KV18 operate with a single clock domain instead of differential clocks?
Yes-when K is tied to C and K to C, the device operates in single-clock mode. In this configuration, K/K drives both input registers and output registers, eliminating need for separate C/C generation but sacrificing flight-time deskew capability provided by differential output clocks.
What is the role of CQ and CQ echo clocks in system design?
CQ and CQ are free-running output clocks synchronized to C and C, respectively. They serve as source-synchronous timing references for external receivers (e.g., FPGA IDELAYCTRL), allowing precise deskewing of data traces and compensation for PCB propagation delays-essential for reliable >500 MHz DDR capture.
CY7C1414KV18-300BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1414KV18-300BZXC FAQ
1.How can I place an order for CY7C1414KV18-300BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1414KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1414KV18-300BZXC reliable?
The price and inventory of CY7C1414KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414KV18-300BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1414KV18-300BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1414KV18-300BZXC transactions.
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4.How is shipping managed for CY7C1414KV18-300BZXC?
CY7C1414KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1414KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1414KV18-300BZXC?
For technical support, including CY7C1414KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1414KV18-300BZXC requirements.
6.How does Aetrix verify that CY7C1414KV18-300BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1414KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414KV18-300BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1414KV18-300BZXC?
All CY7C1414KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414KV18-300BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1414KV18-300BZXC part is unused and in its original packaging.
Return procedure for CY7C1414KV18-300BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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