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Infineon Technologies CY7C1414KV18-300BZXC

Part No.:
CY7C1414KV18-300BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1414KV18-300BZXC.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:133

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Product details

Overview

CY7C1414KV18 from Cypress Semiconductor is a 1M × 36, 36-Mbit QDR® II SRAM with two-word burst architecture, 333 MHz clock operation (666 MHz DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, echo clocks (CQ/CQ), and PLL-based timing control for high-speed networking buffer applications.

For engineers reviewing the CY7C1414KV18 datasheet, CY7C1414KV18 pinout, CY7C1414KV18 application, or CY7C1414KV18 equivalent, key selection criteria include its 1M × 36 organization, dual-clock DDR interface, DOFF-configurable 1- vs 1.5-cycle read latency, and 165-ball FBGA package compatibility with high-bandwidth packet buffering systems.

Technical Context

The CY7C1414KV18 implements a synchronous pipelined QDR II architecture with physically independent read and write data paths-eliminating bus turnaround delays. Its 19-bit address bus accesses a 512K × 36 memory array split across two internal banks, latched on alternating rising edges of K/K clocks.

Read and write operations use dedicated DDR interfaces: data transfers occur on both rising edges of C/C (read) and K/K (write), enabling full-duplex concurrent access. The integrated PLL aligns echo clocks (CQ/CQ) to output clocks for precise source-synchronous capture in 10 GbE and switch fabric designs.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization1M × 36 (36 Mbit total); enables single-access retrieval of full 36-bit wide data words for packet header + payload alignment
Max Clock Frequency333 MHz (K/K, C/C); supports 666 MT/s effective bandwidth per port in DDR mode
Read LatencyConfigurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH); determines pipeline depth for timing-critical control logic
Supply VoltagesCore VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4–1.8 V; allows interoperability with 1.5 V or 1.8 V system I/O rails
Burst LengthFixed two-word burst per access; delivers sequential 36-bit words on consecutive clock edges without address re-latching
Package165-ball FBGA (13 × 15 × 1.4 mm); provides 36 data, 19 address, 4 byte-write select, and dual-clock I/O in space-constrained switch ASIC interfaces

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Write data inputs36-bit synchronous input bus sampled on rising edges of K/K; supports full-width parallel writes without multiplexing
Q[35:0]Read data outputs36-bit DDR output bus driven on rising edges of C/C; tristated when RPS is deasserted
A[18:0]Address inputs19-bit multiplexed address bus latched separately for read (K) and write (K) ports
BWS[3:0]Byte write selectsFour active-low signals controlling 9-bit byte lanes; enables partial-word updates without read-modify-write overhead
C, COutput clock pairDifferential clock inputs for read data capture; used with CQ/CQ for flight-time deskewing in multi-device systems
K, KInput clock pairDifferential clocks for all synchronous inputs (address, data, controls); rising edges drive internal registers
CQ, CQEcho clocksFree-running output clocks synchronized to C/C; provide source-synchronous timing reference for external FPGA/ASIC capture logic
DOFFRead latency controlActive-high input selecting 1-cycle (LOW) or 1.5-cycle (HIGH) read latency; configures pipeline stage count

Key Features

FeatureDesign Value
Separate read/write data portsEnables true concurrent read and write operations-no bus contention or turnaround delay in full-duplex traffic buffers
Two-word DDR burstDelivers two contiguous 36-bit words per access at 666 MT/s, matching typical 72-bit packet header+payload widths
Programmable read latency (DOFF)Allows dynamic adjustment between 1-cycle (low-latency control plane) and 1.5-cycle (higher-frequency timing closure) modes
Integrated PLL and echo clocksEliminates need for external clock synthesizers; CQ/CQ provide trace-matched timing references for reliable >500 MHz data capture
JTAG 1149.1 boundary scanSupports IEEE-compliant test access for interconnect validation in dense BGA layouts without physical probe points

Applications

High-Speed Network Switch BuffersTelecom Line Card Packet Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10/25/40 GbE switch ASICs with real-time forwarding decisions.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as a zero-turnaround first-in-first-out (FIFO) buffer between line-rate ingress parser and egress scheduler logic.

Use Value: Concurrent read/write capability eliminates serialization bottlenecks, enabling full line-rate throughput at 333 MHz clock with deterministic 1-cycle latency path.

Use Scenario: Buffering variable-length IP packets in carrier-grade optical transport equipment with strict jitter and latency budgets.

IC Role / Device Role / Timing Role: High-bandwidth memory subsystem providing burst-aligned storage for packet assembly/disassembly engines in OTN framer ICs.

Use Value: Two-word burst mode matches typical 64–128 byte packet segment sizes, reducing address bus toggling and power consumption by 50% versus single-word devices.

Baseband Processing in 5G Radio UnitsTest Equipment Pattern Memory

Use Scenario: Temporary storage of IQ sample blocks during digital predistortion (DPD) and channel estimation in massive MIMO radio units.

IC Role / Device Role / Timing Role: Low-latency, high-throughput memory interfacing directly with FPGA-based signal processing pipelines operating at 300+ MHz.

Use Value: Echo clocks (CQ/CQ) enable source-synchronous capture with <±50 ps skew tolerance-critical for maintaining EVM integrity in 5G NR waveforms.

Use Scenario: Storing stimulus/response patterns in automated test equipment (ATE) for high-pin-count SoC validation at >500 MHz vector rates.

IC Role / Device Role / Timing Role: Deterministic, jitter-free pattern memory feeding parallel pin electronics (PE) channels via DDR interface.

Use Value: Programmable DOFF setting allows latency tuning to match ATE controller timing margins, improving test coverage for edge-case timing violations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C362000B-333BIN36-Mbit QDR II+, 333 MHz, 1.5 V core, 165-ball FBGA; lacks echo clocks and DOFF latency controlRequires external clock deskew circuitry; unsuitable for ultra-low-jitter capture without added componentsSelect when cost sensitivity outweighs need for source-synchronous timing and latency flexibility
MT47H64M16HR-37E:H1 Gbit DDR2 SDRAM, 375 MHz, 1.8 V, 84-ball FBGA; asynchronous command interface, no dual-port architectureCannot support true concurrent read/write; requires command scheduling and refresh managementSelect only for non-real-time buffering where bandwidth > latency and cost-per-bit dominate

Compared with AS7C362000B-333BIN and MT47H64M16HR-37E:H, the CY7C1414KV18 uniquely delivers deterministic 1-cycle latency, echo-clock–assisted capture, and true dual-port concurrency-making it irreplaceable in line-rate packet buffering and 5G baseband timing-critical designs.

Availability

CY7C1414KV18 is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and 5G radio unit baseband processing requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1414KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

The QDR® II SRAM product line targets ultra-low-latency, high-bandwidth buffering in packet-switched infrastructure-optimized for deterministic timing, concurrent access, and source-synchronous data capture in ASIC/FPGA co-designs.

FAQ

What is the function of the DOFF pin on CY7C1414KV18?

The DOFF (Data Output OFFset) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin at maximum frequency; when LOW, it selects 1-cycle latency for minimal delay in time-critical control paths. This setting directly affects the number of internal pipeline stages before data appears on Q[35:0].

How does the CY7C1414KV18 handle byte-level writes?

It uses four active-low byte write select signals (BWS[3:0]), each controlling a 9-bit lane of the 36-bit D[35:0] bus. During a write, only lanes with asserted BWS signals update memory; unselected bytes retain prior values-enabling efficient partial-word updates without read-modify-write cycles.

Can CY7C1414KV18 operate with a single clock domain instead of differential clocks?

Yes-when K is tied to C and K to C, the device operates in single-clock mode. In this configuration, K/K drives both input registers and output registers, eliminating need for separate C/C generation but sacrificing flight-time deskew capability provided by differential output clocks.

What is the role of CQ and CQ echo clocks in system design?

CQ and CQ are free-running output clocks synchronized to C and C, respectively. They serve as source-synchronous timing references for external receivers (e.g., FPGA IDELAYCTRL), allowing precise deskewing of data traces and compensation for PCB propagation delays-essential for reliable >500 MHz DDR capture.

CY7C1414KV18-300BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1414KV18-300BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1414KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1414KV18-300BZXC reliable?

The price and inventory of CY7C1414KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414KV18-300BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1414KV18-300BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1414KV18-300BZXC transactions.

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4.How is shipping managed for CY7C1414KV18-300BZXC?

CY7C1414KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1414KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1414KV18-300BZXC?

For technical support, including CY7C1414KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1414KV18-300BZXC requirements.

6.How does Aetrix verify that CY7C1414KV18-300BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1414KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414KV18-300BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1414KV18-300BZXC?

All CY7C1414KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414KV18-300BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1414KV18-300BZXC part is unused and in its original packaging.

Return procedure for CY7C1414KV18-300BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1414KV18-300BZXC Tags

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