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Infineon Technologies CY7C1414KV18-300BZXI

Part No.:
CY7C1414KV18-300BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1414KV18-300BZXI.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,620

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Product details

Overview

CY7C1414KV18-300BZXI from Cypress Semiconductor is a 1M × 36, 36-Mbit QDR® II SRAM with two-word burst architecture, 300 MHz clock operation (600 MHz DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply - deployed in high-bandwidth packet buffering for network line cards and switch fabric interfaces.

For engineers reviewing the CY7C1414KV18-300BZXI datasheet, CY7C1414KV18-300BZXI pinout, CY7C1414KV18-300BZXI application, or CY7C1414KV18-300BZXI equivalent, key selection criteria include concurrent read/write port independence, echo-clock–assisted timing closure at 600 Mbps, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, and FBGA-165 package compatibility with high-density routing constraints.

Technical Context

This QDR II SRAM implements fully independent synchronous read and write ports sharing one multiplexed address bus, with separate K/K clocks for address/data capture and C/C clocks for output timing - enabling true concurrent transactions without bus turnaround. It uses on-chip PLL for precise data placement and supports both single- and dual-clock domain modes.

The device delivers 1M × 36 organization (512K × 36 per internal array), 19-bit address bus, four byte-write selects (BWS[3:0]), and echo clocks (CQ/CQ) synchronized to C/C for source-synchronous data capture - critical for deterministic timing in multi-device memory subsystems operating above 500 Mbps per pin.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1M × 36 configuration)
Clock Frequency 300 MHz - sets maximum sustained bandwidth of 4.32 GB/s (36-bit × 600 MT/s DDR)
Read Latency Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - directly impacts pipeline depth in controller design
Supply Voltages VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) - enables interoperability with 1.5 V or 1.8 V interface logic
Package 165-ball FBGA (13 × 15 × 1.4 mm) - supports fine-pitch routing and thermal dissipation up to 730 mA max current
Interface Standard HSTL Class I compatible outputs with programmable drive strength - ensures signal integrity on controlled-impedance PCB traces
JTAG Support IEEE 1149.1 compliant TAP controller - enables boundary scan testing and in-system debug of memory interconnects

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs Sampled on rising edge of K/K; 36-bit parallel input path for burst writes
Q[35:0] Synchronous read data outputs Driven on rising edges of C/C; tristated when RPS is deasserted
BWS[3:0] Byte write select inputs Independent control of four 9-bit bytes - enables partial-word updates without read-modify-write
RPS / WPS Read/write port select Active-low enables port-specific access; deselection auto-tristates outputs or ignores inputs
K / K, C / C Differential clock inputs K/K latch addresses and data; C/C clock out read data - dual-clock mode eliminates skew between controller and memory
CQ / CQ Echo clocks Free-running copies of C/C, phase-aligned to output data - simplify capture timing at controller receiver
DOFF Read latency mode control High = 1.5-cycle latency (pipelined); Low = 1-cycle latency (QDR I–compatible behavior)
VREF Reference voltage input Supplies HSTL input threshold reference; must be set to 0.75 × VDDQ for proper signal sampling

Key Features

Feature Design Value
Concurrent Read/Write Ports Fully independent data paths eliminate bus turnaround overhead - sustains full bandwidth during mixed-access workloads
Two-Word Burst Architecture Each access transfers two sequential 36-bit words - reduces address strobe frequency by 2× versus single-word devices
Source-Synchronous Echo Clocks CQ/CQ track C/C with fixed phase relationship - enable robust data capture at 600 Mbps without complex deskew circuitry
Programmable Drive Strength HSTL output buffers support multiple drive levels - match trace impedance and reduce EMI in dense routing environments
Depth Expansion Support RPS/WPS and BWS signals allow stacking multiple devices across address space - scales capacity without controller redesign

Applications

Network Packet Buffering Switch Fabric Interface

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer with simultaneous read (forwarding engine) and write (MAC interface) access.

Use Value: 4.32 GB/s bandwidth and 1-cycle latency mode meet sub-100 ns round-trip timing budgets for cut-through switching.

Use Scenario: Interfacing distributed scheduler units to centralized crossbar in modular chassis switches.

IC Role / Device Role / Timing Role: Synchronous dual-port memory acting as arbitration queue between multiple traffic classes.

Use Value: Independent RPS/WPS enables priority-based read scheduling while sustaining full write throughput from ingress pipelines.

Telecom Baseband Processing Test Equipment Data Capture

Use Scenario: Real-time buffering of IQ samples between FPGA-based channelizers and DSP cores in 5G NR base stations.

IC Role / Device Role / Timing Role: Burst-mode memory staging buffer synchronizing variable-rate ADC streams with fixed-rate processing blocks.

Use Value: Two-word burst and echo clocks ensure deterministic sample alignment across 12-bit × 36-bit parallel interfaces at 300 MHz.

Use Scenario: Capturing high-speed serial protocol waveforms (e.g., PCIe Gen4, USB3.2) in automated test systems.

IC Role / Device Role / Timing Role: Deep FIFO replacement with concurrent write (acquisition) and read (analysis) access.

Use Value: 36-bit width and 1.4–1.8 V VDDQ support direct interfacing to 1.5 V logic analyzers without level shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1414KV18-250BZXI 250 MHz max clock (500 MT/s DDR); lower power (730 mA vs. 850 mA at 300 MHz) Acceptable for ≤2.88 GB/s bandwidth needs; better thermal margin in fanless enclosures Select when system timing budget allows relaxed clock rate and power envelope is constrained
AS7C336000B-300BIN 36-Mbit QDR II+ (not QDR II); adds dynamic latency control and enhanced jitter tolerance Supports adaptive latency tuning in variable-load systems; requires updated controller firmware Select when future-proofing for higher jitter environments or requiring runtime latency adjustment

Compared with CY7C1414KV18-250BZXI, the -300BZXI delivers +20% bandwidth at higher power; compared with AS7C336000B-300BIN, it offers proven controller compatibility but lacks dynamic latency features - making it optimal for stable, high-throughput legacy designs.

Availability

CY7C1414KV18-300BZXI is available at Aetrix Electronics and suitable for network line cards, telecom baseband units, high-speed test equipment, and switch fabric interfaces requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1414KV18-300BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

CY7C1414KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in packet-switched infrastructure where bus turnaround overhead must be eliminated.

FAQ

What is the function of the DOFF pin on CY7C1414KV18-300BZXI?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, the device operates with 1.5-cycle read latency (QDR II mode); when LOW, it uses 1-cycle latency (QDR I–compatible). This setting is sampled synchronously on the rising edge of K and affects all subsequent read operations until changed.

Can CY7C1414KV18-300BZXI operate with only a single clock domain?

Yes - the device supports single-clock mode where K and C are tied together (and K and C likewise), simplifying board layout. In this mode, data is latched and driven using only the K/K pair, and echo clocks (CQ/CQ) derive from K/K instead of C/C. All timing parameters adjust accordingly per the datasheet's single-clock AC table.

How does the BWS[3:0] signal enable partial writes in CY7C1414KV18-300BZXI?

BWS[3:0] controls four independent 9-bit byte lanes within the 36-bit D[35:0] bus. Each BWS bit, when LOW, enables writing to its corresponding byte group (e.g., BWS0 → D[8:0]); HIGH disables that byte. This allows atomic 9-, 18-, or 27-bit updates without reading-modifying-writing the full 36-bit word - preserving data coherency in multi-threaded access scenarios.

Is the 165-ball FBGA package of CY7C1414KV18-300BZXI compatible with standard reflow profiles?

Yes - the Pb-free 165-ball FBGA package is qualified for IPC/JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C. Thermal resistance (θJA) is 24.5 °C/W, and the 1.4 mm height supports standard pick-and-place and underfill processes used in high-reliability telecom and industrial assemblies.

CY7C1414KV18-300BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1414KV18-300BZXI FAQ

1.How can I place an order for CY7C1414KV18-300BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1414KV18-300BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1414KV18-300BZXI reliable?

The price and inventory of CY7C1414KV18-300BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414KV18-300BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1414KV18-300BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1414KV18-300BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1414KV18-300BZXI?

CY7C1414KV18-300BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1414KV18-300BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1414KV18-300BZXI?

For technical support, including CY7C1414KV18-300BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1414KV18-300BZXI requirements.

6.How does Aetrix verify that CY7C1414KV18-300BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1414KV18-300BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414KV18-300BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1414KV18-300BZXI?

All CY7C1414KV18-300BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414KV18-300BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1414KV18-300BZXI part is unused and in its original packaging.

Return procedure for CY7C1414KV18-300BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1414KV18-300BZXI Tags

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