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Infineon Technologies CY7C1415AV18-250BZCT

Part No.:
CY7C1415AV18-250BZCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1415AV18-250BZCT.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,890

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Product details

Overview

CY7C1415AV18 from Cypress Semiconductor is a 1M × 36-bit, 36-Mbit QDR-II SRAM with synchronous pipelined architecture, dual independent read/write ports, 250 MHz operation (40 ns clock period), DDR interfaces on both ports enabling 500 MT/s effective data rate, and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers full data coherency and supports depth expansion via port selects in high-bandwidth networking buffer applications.

For engineers reviewing the CY7C1415AV18 datasheet, CY7C1415AV18 pinout, CY7C1415AV18 application, or CY7C1415AV18 equivalent, key selection considerations include its 1M × 36 organization, dual-clock timing (K/K and C/C), echo clocks (CQ/CQ) for source-synchronous capture, HSTL I/O compliance, and DLL-enabled precise data placement at 250 MHz.

Technical Context

The CY7C1415AV18 implements QDR-II architecture with physically separate read and write data paths, eliminating bus turnaround overhead. Its 18-bit address bus (A[17:0]) accesses a 256K × 36 internal array organized across four 256K × 36 sub-arrays, with address latching on alternate rising edges of K clock for burst addressing.

All synchronous inputs are registered to K/K clocks; read data outputs Q[35:0] are edge-aligned to C/C clocks, while echo clocks CQ/CQ track output timing for controller deskew. The integrated Delay Lock Loop (DLL) aligns internal data launch to C/C edges, and DOFF pin allows DLL disable for alternative timing modes.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1M × 36 configuration)
Maximum Clock Frequency 250 MHz - defines 40 ns clock period for all synchronous operations
Data Rate 500 MT/s - achieved via DDR on both read and write ports (250 MHz × 2 transitions)
Core Supply Voltage 1.8 V ± 0.1 V - powers internal logic and memory array; strict tolerance required for timing stability
I/O Supply Voltage 1.4 V to 1.8 V - supports HSTL Class I outputs and input thresholds; VDDQ must match system bus voltage
Package 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-pin-count, high-speed memory devices
Burst Length 4-word - fixed burst transfers 144 bits per access (36-bit × 4), reducing address bus toggling frequency by 4×

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit parallel data sampled on rising edge of K/K; enables full-width writes without multiplexing
Q[35:0] Synchronous read data output 36-bit parallel data driven on rising edges of C/C; supports source-synchronous capture with CQ/CQ
K / K Positive/negative input clock Primary clock pair for address, control, and write data capture; determines maximum 250 MHz operation
C / C Positive/negative output clock Separate clock pair for read data and echo clock generation; minimizes skew between controller and memory
CQ / CQ Echo clocks referenced to C/C Free-running copies of C/C used by controller to latch Q[35:0]; eliminates flight-time mismatch compensation
RPS / WPS Read/Write Port Select (active LOW) Independent enable signals for concurrent read/write operations; supports true dual-port arbitration
BWS[3:0] Byte Write Select (active LOW) Four independent 9-bit byte enables for selective 36-bit write masking; preserves unselected bytes
ZQ Output impedance calibration input Connects to external 240 Ω resistor to ground to calibrate Q[35:0] and CQ/CQ drive strength to 48 Ω
DOFF DLL disable control Active-LOW signal to bypass internal Delay Lock Loop; alters output timing parameters and disables CQ/CQ alignment
VDD / VDDQ / VSS / VREF Power, ground, reference VDD = 1.8 V core; VDDQ = 1.4–1.8 V I/O; VREF = HSTL reference (typically 0.7 × VDDQ); all require local decoupling

Key Features

Feature Design Value
Separate read/write data ports Eliminates bus turnaround delay and contention, enabling true concurrent access in packet buffering systems
Double Data Rate (DDR) interface Transfers data on both rising edges of K/K and C/C clocks, doubling bandwidth without increasing clock frequency
Echo clocks (CQ/CQ) Provide controller with timing-locked replicas of C/C, enabling reliable source-synchronous data capture at 500 MT/s
Delay Lock Loop (DLL) Aligns internal data launch to C/C edges with sub-cycle precision, ensuring setup/hold compliance across process/voltage/temperature
HSTL Class I compatible I/O Supports 1.4–1.8 V VDDQ operation with programmable drive strength via ZQ calibration, matching FPGA/ASIC memory controllers
JTAG 1149.1 test access port Enables boundary scan testing and in-system diagnostics without requiring additional test pads or probes

Applications

Network Packet Buffering High-Speed Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as line-rate buffer with simultaneous header lookup (read) and payload write under traffic load.

Use Value: 36-bit width matches common packet bus widths; 250 MHz clock enables 9 Gbps aggregate bandwidth (36-bit × 250 MHz × 2), sustaining 10G+ line rates.

Use Scenario: Interconnecting crossbar switch stages in telecom core routers with deterministic latency.

IC Role / Device Role / Timing Role: Shared memory resource accessed concurrently by multiple scheduler engines for cell/packet queuing.

Use Value: Full data coherency ensures most recent write is always available on next read; burst-4 mode reduces address bus cycles by 75% versus single-word access.

Baseband Processing Buffer Real-Time Video Frame Store

Use Scenario: Temporary storage of OFDM symbol data between FFT and channel estimation blocks in LTE/5G baseband ICs.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory interfaced to ASIC with HSTL I/O and source-synchronous clocks.

Use Value: Echo clocks CQ/CQ allow FPGA-based controller to meet tight 0.15 UI setup/hold windows at 500 MT/s; DLL ensures consistent timing margin over temperature.

Use Scenario: Frame buffering in broadcast-grade video processing equipment handling 4K60 YUV422 streams.

IC Role / Device Role / Timing Role: High-throughput memory staging area for pixel data between scaler, color space converter, and encoder pipelines.

Use Value: 1M × 36 organization provides 36-bit aligned access to 12-bit RGB components; 165-ball FBGA enables dense PCB layout with controlled impedance routing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-250BIN 256K × 36, 250 MHz, 165-ball FBGA, but uses single-ended SSTL-18 I/O instead of HSTL; no echo clocks or DLL Lacks source-synchronous timing support; requires tighter board-level skew control and external deskew logic Prefer when system controller lacks echo clock receivers or when lower power (750 mA vs. 870 mA) is prioritized over timing margin
IS61WV102436B-250TQLI 1M × 36, 250 MHz, 165-ball TQFP (not FBGA); supports QDR-II but omits JTAG, ZQ calibration, and DOFF control No impedance tuning or DLL disable capability; TQFP limits high-frequency signal integrity and thermal performance Consider only for cost-sensitive, non-thermal-critical prototypes where FBGA assembly is unavailable

Compared with AS7C362000B-250BIN and IS61WV102436B-250TQLI, the CY7C1415AV18 uniquely integrates echo clocks, DLL, and ZQ calibration-enabling robust 500 MT/s operation in production networking hardware without custom timing compensation.

Availability

CY7C1415AV18 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, baseband processing, and real-time video frame store applications requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for CY7C1415AV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems, with headquarters in San Jose, CA.

The QDR-II SRAM product line targets high-bandwidth, low-latency buffering in networking infrastructure-specifically engineered for deterministic concurrent read/write access in packet-switched systems operating at OC-192 and beyond.

FAQ

What is the minimum VDDQ voltage supported by CY7C1415AV18?

The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V violates HSTL Class I specifications and risks input threshold violation, output drive strength loss, and timing parameter degradation. System design must maintain VDDQ ≥ 1.4 V with ≤ ±3% ripple.

Can CY7C1415AV18 operate without connecting the ZQ pin?

No. ZQ must be connected either to a 240 Ω resistor to ground for impedance calibration or directly to VDDQ for minimum-drive mode. Leaving ZQ floating or tied to VSS causes undefined output drive strength, violating HSTL specifications and risking signal integrity failure at 500 MT/s.

How does the DOFF pin affect timing behavior?

When DOFF is pulled LOW, the internal DLL is disabled, causing CQ/CQ to become free-running and uncoupled from C/C, and shifting output data timing to DLL-bypass parameters (tAC increased by ~0.3 ns). All DLL-dependent specs-including tCQSkew and tCQH-no longer apply.

Is CY7C1415AV18 pin-compatible with other QDR-II family members like CY7C1413AV18?

No. While all share the same 165-ball FBGA footprint, pin functions differ significantly: CY7C1415AV18 uses BWS[3:0] and Q[35:0], whereas CY7C1413AV18 uses BWS[1:0] and Q[17:0]. Address count (A[17:0] vs. A[18:0]), data width, and byte-select mapping are incompatible; PCB redesign is required for substitution.

CY7C1415AV18-250BZCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1415AV18-250BZCT FAQ

1.How can I place an order for CY7C1415AV18-250BZCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1415AV18-250BZCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1415AV18-250BZCT reliable?

The price and inventory of CY7C1415AV18-250BZCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1415AV18-250BZCT is usually 5 days.

3.What payment methods are accepted for CY7C1415AV18-250BZCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1415AV18-250BZCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1415AV18-250BZCT?

CY7C1415AV18-250BZCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1415AV18-250BZCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1415AV18-250BZCT?

For technical support, including CY7C1415AV18-250BZCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1415AV18-250BZCT requirements.

6.How does Aetrix verify that CY7C1415AV18-250BZCT is sourced from the original manufacturer or authorized distributors?

All CY7C1415AV18-250BZCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1415AV18-250BZCT meets industry standards.

7.What is the process for return or replacement of CY7C1415AV18-250BZCT?

All CY7C1415AV18-250BZCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1415AV18-250BZCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1415AV18-250BZCT part is unused and in its original packaging.

Return procedure for CY7C1415AV18-250BZCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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