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Infineon Technologies CY7C1415BV18-200BZXC

Part No.:
CY7C1415BV18-200BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1415BV18-200BZXC.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,298

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Product details

Overview

CY7C1415BV18 from Cypress Semiconductor is a 1M × 36-bit, 36-Mbit QDR-II SRAM with synchronous pipelined architecture, separate read/write ports, 200 MHz maximum operating frequency (167–300 MHz range), 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It delivers concurrent high-bandwidth data access in network packet buffering and switch fabric memory applications.

For engineers reviewing the CY7C1415BV18 datasheet, CY7C1415BV18 pinout, CY7C1415BV18 application, or CY7C1415BV18 equivalent, key selection criteria include burst depth (4-word), DLL-enabled 1.5-cycle read latency, HSTL-compatible 165-ball FBGA package, and dual-clock DDR timing for simultaneous read/write at 600 MT/s effective data rate.

Technical Context

The CY7C1415BV18 implements QDR-II architecture with fully independent read and write ports sharing a single multiplexed address bus latched on alternating edges of K/K clocks. Its internal 256K × 36 memory array supports 4-word sequential burst transfers per access, eliminating bus turnaround overhead.

It uses dual DDR interfaces: write data sampled on rising edges of K/K, read data driven on rising edges of C/C with echo clocks CQ/CQ for precise capture timing. The integrated Delay Lock Loop (DLL) enables accurate 1.5-cycle read latency at 200 MHz; disabling DLL via DOFF pin reverts to QDR-I mode with 1-cycle latency and ≤167 MHz operation.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 1M × 36-bit (36 Mbit total); enables 144-bit wide data path per burst cycle
Maximum Clock Frequency 200 MHz (K/K and C/C); supports 400 MT/s sustained throughput with 4-word burst
Read Latency 1.5 cycles with DLL enabled; ensures deterministic timing for pipeline-synchronized systems
Core Supply Voltage VDD = 1.8 V ± 0.1 V; requires tight regulation for stable SRAM cell operation
I/O Supply Range VDDQ = 1.4 V to 1.8 V; compatible with HSTL Class I/II signaling standards
Burst Length Fixed 4-word burst; reduces address bus toggling by 75% vs. single-word addressing
Package 165-ball FBGA (15 × 17 × 1.4 mm); supports high-density routing and thermal dissipation

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs Sampled on rising edge of K/K; 36-bit parallel input path for burst writes
Q[35:0] Synchronous read data outputs Driven on rising edge of C/C; tri-stated when RPS is deasserted
A[17:0] Multiplexed address inputs Latched on rising edge of K; 18 bits address 256K locations for 1M×36 configuration
RPS Read port select (active LOW) Enables read burst; output drivers tri-state on deassertion after completion
WPS Write port select (active LOW) Initiates write burst; ignores D[35:0] when deasserted
BWS[3:0] Byte write selects (active LOW) Selects four 9-bit bytes for partial writes; preserves unselected byte contents
K, K Positive/negative input clocks Control all synchronous inputs; rising edges latch addresses, data, and controls
C, C Positive/negative output clocks Drive Q[35:0] and CQ/CQ; enable flight-time deskew across multi-device systems
CQ, CQ Echo clocks referenced to C/C Provide receiver-side clock reference for source-synchronous data capture
ZQ Output impedance calibration input Connects to external resistor to ground to tune Q[35:0]/CQ/CQ drive strength to 0.2×RQ
DOFF DLL disable control (active LOW) Forces QDR-I mode (1-cycle latency, ≤167 MHz); pull-up required for normal operation
TCK/TMS/TDI/TDO JTAG test access port Supports IEEE 1149.1 boundary scan for production testing and debug

Key Features

Feature Design Value
Separate read/write data ports Eliminates bus turnaround delay and data contention in full-duplex memory systems
4-word burst architecture Reduces address bus frequency by 75%, easing PCB routing and timing closure
Dual DDR interfaces (K/K and C/C) Enables 600 MT/s effective data rate at 200 MHz clock without doubling clock frequency
Integrated Delay Lock Loop (DLL) Delivers 1.5-cycle deterministic read latency for pipeline-aligned system timing
HSTL Class I/II compatible I/O Ensures signal integrity at 600 MT/s with programmable drive strength via ZQ calibration
JTAG 1149.1 test access Supports automated board-level test and interconnect verification in manufacturing

Applications

Network Packet Buffering Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with line-rate throughput requirements.

IC Role / Device Role / Timing Role: High-speed shared memory buffer with concurrent read/write access for header lookup and payload storage.

Use Value: 4-word burst and separate ports sustain 600 MT/s bidirectional bandwidth, enabling zero-latency packet forwarding at 10 Gbps+ line rates.

Use Scenario: Interconnecting multiple ASICs in modular chassis-based routers where memory must serve as crossbar arbitration table.

IC Role / Device Role / Timing Role: Deterministic-latency SRAM acting as distributed lookup table for switching matrix configuration.

Use Value: DLL-enabled 1.5-cycle read latency ensures consistent pipeline alignment across multi-chip fabric, reducing jitter in cell scheduling.

Telecom Line Card Memory High-Performance Test Equipment

Use Scenario: Frame buffering in SONET/SDH OC-192 and OTN OTU2 line cards requiring low-jitter, burst-oriented memory access.

IC Role / Device Role / Timing Role: Synchronous burst SRAM interfacing directly with SerDes PHY controllers for frame assembly/disassembly.

Use Value: Echo clocks CQ/CQ provide source-synchronous timing for reliable capture at 600 MT/s, eliminating setup/hold violations in long trace layouts.

Use Scenario: Pattern memory in high-speed digital logic analyzers and ATE systems capturing multi-gigabit serial waveforms.

IC Role / Device Role / Timing Role: Deep, low-latency memory storing real-time waveform samples with precise timestamp correlation.

Use Value: 1M×36 organization provides 144-bit wide capture per cycle, matching parallel bus widths of high-end pattern generators.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1413BV18 2M × 18-bit (36 Mbit), 19-bit address bus, BWS[1:0], 512K × 18 internal array Requires wider data bus (18-bit) and different byte-write granularity; suited for 18-bit datapath systems Select when system uses 18-bit-wide memory interface and needs identical density with lower pin count
AS7C362000B-200BIN 1M × 36-bit QDR-II+, 200 MHz, 1.5V core, supports 2-cycle burst option and enhanced DLL Offers extended temperature range (−40°C to +85°C) and optional 2-cycle burst mode for flexible latency trade-offs Choose for industrial environments or when programmable burst length adds design flexibility

Compared with CY7C1415BV18, CY7C1413BV18 trades data width for reduced address pins and simpler byte-write control, while AS7C362000B-200BIN extends operational range and adds burst-mode configurability-both retain QDR-II timing but differ in packaging, thermal specs, and feature set.

Availability

CY7C1415BV18 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, telecom line card memory, and high-performance test equipment requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1415BV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, computing, and industrial systems.

The QDR-II SRAM product line targets high-throughput, low-latency memory subsystems in networking and telecom infrastructure where deterministic burst access and concurrent read/write are critical.

FAQ

What is the minimum VDDQ voltage supported by CY7C1415BV18?

The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V is not guaranteed and may cause output driver malfunction or timing violations. HSTL Class I compliance requires VDDQ ≥ 1.4 V, and ZQ calibration assumes this range for correct impedance tuning.

Can CY7C1415BV18 operate without an external ZQ resistor?

No - ZQ must be connected either to a precision resistor to ground (for calibrated 0.2×RQ output impedance) or directly to VDDQ (for minimum impedance mode). Leaving ZQ floating or connecting it to VSS violates the absolute maximum ratings and risks output driver damage or undefined behavior.

How does DOFF affect read latency and maximum frequency?

Asserting DOFF disables the DLL, forcing QDR-I timing: read latency drops to 1 cycle but maximum operating frequency is limited to 167 MHz. At 200 MHz, DLL must be enabled to meet AC timing specifications; DOFF is intended only for backward compatibility or low-frequency power-saving modes.

Is CY7C1415BV18 pin-compatible with other devices in the CY7C14xxBV18 family?

No - although all share the same 165-ball FBGA footprint, pin functions differ significantly across configurations (e.g., BWS[3:0] in CY7C1415BV18 vs. NWS[1:0] in CY7C1411BV18, different address widths, and distinct D/Q bus widths). Direct substitution requires PCB redesign and firmware adaptation.

CY7C1415BV18-200BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1415BV18-200BZXC FAQ

1.How can I place an order for CY7C1415BV18-200BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1415BV18-200BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1415BV18-200BZXC reliable?

The price and inventory of CY7C1415BV18-200BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1415BV18-200BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1415BV18-200BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1415BV18-200BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1415BV18-200BZXC?

CY7C1415BV18-200BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1415BV18-200BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1415BV18-200BZXC?

For technical support, including CY7C1415BV18-200BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1415BV18-200BZXC requirements.

6.How does Aetrix verify that CY7C1415BV18-200BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1415BV18-200BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1415BV18-200BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1415BV18-200BZXC?

All CY7C1415BV18-200BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1415BV18-200BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1415BV18-200BZXC part is unused and in its original packaging.

Return procedure for CY7C1415BV18-200BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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