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Infineon Technologies CY7C1415BV18-250BZC

Part No.:
CY7C1415BV18-250BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1415BV18-250BZC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,175

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Product details

Overview

CY7C1415BV18 from Cypress Semiconductor is a 1M × 36-bit, 36-Mbit QDR-II SRAM with separate read/write ports, 250 MHz operation (400 ps clock period), DDR interfaces on both ports enabling 600 MHz data transfer, and 1.8 V core / 1.4 V I/O supply. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1415BV18 datasheet, CY7C1415BV18 pinout, CY7C1415BV18 application, or CY7C1415BV18 equivalent, key selection criteria include burst depth (4-word), DLL-enabled 1.5-cycle read latency, x36 bus width, 165-ball FBGA package, and HSTL-18 I/O compatibility with precise echo-clock timing.

Technical Context

This QDR-II SRAM implements fully independent synchronous read and write pipelines, each with dedicated address latching on alternating edges of K/K clocks and data transfer synchronized to C/C output clocks. Its architecture eliminates bus turnaround by separating D[35:0] inputs and Q[35:0] outputs.

The device supports dual-clock domain operation with echo clocks CQ/CQ referenced to C/C for deskewed data capture, and includes a programmable Delay Lock Loop (DLL) that enables 1.5-cycle read latency at 250 MHz or reverts to QDR-I 1-cycle latency when disabled via DOFF.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1M × 36 configuration)
Maximum Clock Frequency 250 MHz - defines maximum sustained bandwidth of 18 Gbps (36 bits × 2 edges × 250 MHz)
Read Latency 1.5 cycles with DLL enabled - enables deterministic timing alignment for high-speed SerDes interface buffering
Core Supply Voltage 1.8 V ±0.1 V - requires tight-regulated low-noise core rail; not compatible with 2.5 V or 3.3 V cores
I/O Supply Voltage 1.4 V - matches HSTL-18 standard; sets output drive strength and termination reference
Burst Length 4-word - reduces address bus toggling frequency by 4× versus single-word access
Package 165-ball FBGA (15 mm × 17 mm × 1.4 mm) - supports high-density routing with 0.8 mm ball pitch

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm footprint, 1.4 mm height, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit parallel data sampled on rising edge of K clock; supports full-width burst writes
Q[35:0] Synchronous read data output 36-bit parallel data driven on rising edges of C/C clocks; tri-stated when RPS is deasserted
A[17:0] Multiplexed address input 18-bit address latched on K rising edge for both read and write operations; sufficient for 1M-depth addressing
RPS Read port select (active LOW) Enables read burst; deassertion tri-states Q[35:0] after completion of current burst
WPS Write port select (active LOW) Initiates write burst; deassertion ignores D[35:0] and preserves memory contents
BWS[3:0] Byte write select (active LOW) Independent control over four 9-bit bytes; allows partial writes without read-modify-write overhead
C, C Output data clocks Differential pair driving Q[35:0]; used with CQ/CQ for flight-time deskew in multi-device systems
K, K Input command clocks Differential pair capturing A[17:0], D[35:0], RPS, WPS, BWS[3:0]; rising edges define all timing references
CQ, CQ Echo clocks Free-running copies of C/C; simplify source-synchronous capture at controller by matching trace delays
ZQ Impedance calibration input Connects to external 240 Ω resistor to ground to calibrate output driver impedance to 48 Ω (0.2 × RQ)
DOFF DLL disable control Pull LOW to disable DLL and operate in QDR-I mode (1-cycle latency, max 167 MHz)
VDD, VDDQ, VSS, VREF Power and reference rails VDD = 1.8 V core; VDDQ = 1.4 V I/O; VREF = 0.7 V reference for HSTL thresholds; VSS = common ground

Key Features

Feature Design Value
Separate read/write ports Eliminates bus turnaround delay and contention-enables true concurrent access in packet forwarding engines
4-word burst architecture Reduces address bus switching rate by 75% versus single-word access-lowers EMI and routing complexity
DDR interfaces on both ports Delivers 600 MT/s effective data rate per port at 250 MHz clock-maximizes throughput without increasing clock frequency
Delay Lock Loop (DLL) Enables 1.5-cycle read latency with sub-100 ps jitter tolerance-supports deterministic timing closure in 10G+ switch fabrics
HSTL-18 compatible I/O Ensures signal integrity at 600 Mbps with controlled slew and on-die impedance matching via ZQ calibration

Applications

Telecom Line Card Buffering High-Speed Switch Fabric Memory

Use Scenario: Storing and forwarding variable-length Ethernet/SONET frames in OC-192 line interface modules.

IC Role / Device Role / Timing Role: Dual-port buffer holding ingress packets while egress scheduler reads out prioritized traffic.

Use Value: Concurrent read/write avoids arbitration stalls; 36-bit width matches 4-byte-aligned packet headers and CRC fields.

Use Scenario: Temporary storage of cell/packet descriptors in crossbar-based Layer 2/L3 switches operating at 10–40 Gbps.

IC Role / Device Role / Timing Role: Descriptor cache providing low-latency access to forwarding metadata during header parsing and lookup.

Use Value: 1.5-cycle DLL latency ensures descriptor fetch aligns precisely with pipeline stages; echo clocks simplify timing margining.

Network Processor Co-Processor Memory Test Equipment Pattern Memory

Use Scenario: Offloading packet classification and deep packet inspection tasks from main NPU core using dedicated memory space.

IC Role / Device Role / Timing Role: High-bandwidth scratchpad for temporary rule-matching results and flow state tables.

Use Value: x36 bus width accommodates wide match keys; separate ports allow simultaneous rule update and query operations.

Use Scenario: Storing stimulus/response patterns in automated test equipment for high-speed serial interface validation (e.g., PCIe Gen3).

IC Role / Device Role / Timing Role: Deterministic-access pattern generator memory synchronized to tester clock domains.

Use Value: DLL-controlled latency guarantees repeatable timing offsets; echo clocks enable precise phase alignment across multiple devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1415BV18-250BZI Same die, industrial temperature range (−40°C to +85°C) vs. commercial (0°C to +70°C); identical timing and pinout Required for outdoor base stations or industrial routers where ambient exceeds 70°C Select BZI for extended thermal environments; no redesign needed
AS7C33618B-250BIN 36-Mbit QDR-II SRAM, 250 MHz, but uses 1.5 V core (not 1.8 V) and different HSTL variant (HSTL-15); non-pin-compatible FBGA Limited use in legacy 1.5 V systems; requires voltage rail and layout changes Not drop-in; only consider if redesigning power delivery and signal integrity for 1.5 V ecosystem

Compared with CY7C1415BV18-250BZC, the BZI variant extends thermal range without electrical or mechanical change, while AS7C33618B demands full system-level requalification due to core voltage and I/O standard mismatch.

Availability

CY7C1415BV18-250BZC is available at Aetrix Electronics and suitable for telecom infrastructure, high-speed switch fabric, network processor co-processing, and automated test equipment requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1415BV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and mixed-signal ICs for communications, industrial, and automotive applications, with emphasis on signal integrity and timing precision.

This device belongs to the QDR-II SRAM product line, engineered specifically for deterministic, low-latency, concurrent memory access in packet-switched networking systems operating above 10 Gbps.

FAQ

What is the minimum supported clock frequency for CY7C1415BV18-250BZC?

The device has no specified minimum clock frequency; it operates down to DC for static timing analysis. Functional operation requires stable K/K and C/C clocks with valid setup/hold margins per AC specifications. At very low frequencies (<10 MHz), DLL lock time may dominate initialization, but the SRAM remains fully functional once locked or when DLL is disabled via DOFF.

Can CY7C1415BV18-250BZC be used in single-clock mode?

Yes. When C and C are tied together and driven by K and K respectively, the device operates in single-clock mode. In this configuration, Q[35:0] is clocked by K/K instead of C/C, and CQ/CQ are generated relative to K/K. All timing parameters shift accordingly, and DLL remains active unless explicitly disabled via DOFF.

How does ZQ calibration affect signal integrity?

ZQ calibration adjusts the output driver impedance of Q[35:0], CQ, and CQ to match the PCB trace impedance (typically 50 Ω). With a 240 Ω resistor to ground, drivers are tuned to 48 Ω (0.2 × 240 Ω), minimizing reflections and improving eye diagram margin. Leaving ZQ unconnected or tied to GND violates specification and causes undefined output drive strength.

Is JTAG boundary scan supported on CY7C1415BV18-250BZC?

Yes. The device implements IEEE 1149.1 JTAG TAP controller with TDI, TDO, TCK, and TMS pins. Boundary scan supports interconnect testing and in-system programming of configuration registers. JTAG functionality remains active regardless of DLL or clock mode settings, and does not interfere with normal memory operation.

CY7C1415BV18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1415BV18-250BZC FAQ

1.How can I place an order for CY7C1415BV18-250BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1415BV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1415BV18-250BZC reliable?

The price and inventory of CY7C1415BV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1415BV18-250BZC is usually 5 days.

3.What payment methods are accepted for CY7C1415BV18-250BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1415BV18-250BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1415BV18-250BZC?

CY7C1415BV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1415BV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1415BV18-250BZC?

For technical support, including CY7C1415BV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1415BV18-250BZC requirements.

6.How does Aetrix verify that CY7C1415BV18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1415BV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1415BV18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1415BV18-250BZC?

All CY7C1415BV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1415BV18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1415BV18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1415BV18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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