Infineon Technologies CY7C1415KV18-250BZCT

Overview

CY7C1415KV18-250BZCT from Cypress Semiconductor is a 1 M × 36, 36-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (400 Mbps per pin), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, echo clocks (CQ/CQ), and programmable impedance for high-speed memory subsystems in network packet buffers and FPGA co-processors.

For engineers reviewing the CY7C1415KV18-250BZCT datasheet, CY7C1415KV18-250BZCT pinout, CY7C1415KV18-250BZCT application, or CY7C1415KV18-250BZCT equivalent, key selection criteria include 36-bit data width, 18-bit address bus, DOFF-configurable 1-cycle/1.5-cycle read latency, HSTL-compatible outputs, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with high-density PCB layouts.

Technical Context

This QDR II SRAM implements dual DDR interfaces: read data transfers on rising edges of C/C clocks at 500 Mbps (250 MHz clock), write data latched on K/K rising edges. Internal pipelining enables concurrent read/write operations without bus turnaround, supported by independent RPS/WPS controls and four-byte-aligned BWS[3:0] byte-write selects.

The device uses a PLL for precise output data placement and includes JTAG 1149.1 test access port, echo clocks (CQ/CQ) for source-synchronous capture, and VREF/ZQ pins for HSTL termination calibration. Core logic operates at 1.8 V ±0.1 V; I/Os support 1.4–1.8 V VDDQ with variable-drive output buffers.

Key Specifications

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant. Pin layout optimized for differential clock routing (K/K, C/C, CQ/CQ) and symmetrical D/Q signal fanout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed QDR SRAM applications.

Compared with IDT72T3615L10BG and ISSI IS61WV102436B, CY7C1415KV18-250BZCT delivers higher bandwidth (500 Mbps vs. 334/400 Mbps), integrated echo clocks for simplified capture, and ZQ calibration for robust HSTL signaling - making it optimal for 25G+ networking and FPGA acceleration where timing margin and signal integrity are critical.

Availability

CY7C1415KV18-250BZCT is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and telecom baseband processing requiring stable component supply across extended product lifecycles.

Supply support for CY7C1415KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

CY7C1415KV18 belongs to the QDR II SRAM product line, engineered specifically for ultra-low-latency, concurrent-access memory subsystems in high-speed packet processing and FPGA-based acceleration platforms.

FAQ

What is the function of the DOFF pin on CY7C1415KV18-250BZCT?

The DOFF (Data Output OFFset) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin; when LOW, it selects 1-cycle latency for minimum delay. This setting directly affects the C-clock-to-Q-output timing relationship and must be fixed at power-up based on system clocking architecture and PCB trace delays.

Can CY7C1415KV18-250BZCT operate with only a single clock domain?

Yes - the device supports single-clock mode where K and C are tied together (and K and C likewise), eliminating need for separate read/write clocks. In this mode, all data transfers synchronize to the same clock edges, simplifying clock tree design at the cost of reduced concurrency capability compared to dual-clock operation.

How does the BWS[3:0] signal mapping work for 36-bit writes?

BWS[3:0] controls four independent 9-bit byte lanes: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. Each active-low signal enables its corresponding 9-bit segment during write cycles; deselected bytes retain prior contents, enabling efficient partial-word updates without read-modify-write overhead.

Is the 165-ball FBGA package of CY7C1415KV18-250BZCT compatible with standard reflow profiles?

Yes - the package complies with IPC/JEDEC J-STD-020 moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak temperature ≤260°C). Ball composition is SnAgCu (SAC305), and thermal resistance (θ_JA) is 22.5°C/W, requiring standard 4-layer PCB with thermal vias under the die pad for reliable operation at 640 mA max current.