Infineon Technologies CY7C1415KV18-250BZI
- Part No.:
- CY7C1415KV18-250BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1415KV18-250BZI.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:625
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Product details
Overview
CY7C1415KV18 from Cypress Semiconductor is a 1 M × 36, 36-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (400 Mbps per pin), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, echo clocks (CQ/CQ), and programmable DOFF for 1-cycle or 1.5-cycle read latency-used in high-bandwidth packet buffering in network line cards.
For engineers reviewing the CY7C1415KV18 datasheet, CY7C1415KV18 pinout, CY7C1415KV18 application, or CY7C1415KV18 equivalent, key selection criteria include DDR timing margin at 250 MHz, FBGA-165 package compatibility, QDR II depth expansion support via BWS[3:0], and DOFF-configurable read latency for system-level synchronization.
Technical Context
The CY7C1415KV18 implements true dual-port synchronous pipelined access: independent K/K clocks drive write address/data latching, while C/C clocks control output register timing. Its 1 M × 36 organization uses 18 address bits (A[17:0]) and supports full coherency-every read returns the most recently written data across both ports.
It integrates a phase-locked loop (PLL) for precise internal clock alignment, HSTL-class variable-drive output buffers, and IEEE 1149.1 JTAG boundary scan. The device operates in single-clock mode (K = C) or dual-clock mode (K/K and C/C), with echo clocks CQ/CQ enabling source-synchronous capture at the controller.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1 M × 36), enabling 4-byte aligned burst transfers without external width conversion |
| Max Clock Frequency | 250 MHz (400 Mbps per pin DDR), defining maximum sustained bandwidth of 3.6 Gbps (36 × 400 Mbps) |
| Read Latency | Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH), directly impacting pipeline depth in switch fabric controllers |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O), supporting interoperability with 1.5 V or 1.8 V logic domains |
| Burst Length | Four-word burst (36-bit × 4 = 144-bit per transaction), reducing address bus toggling by 75% vs. single-word access |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm), RoHS-compliant with 0.8 mm ball pitch-compatible with standard 10-layer PCB routing |
| Write Select Granularity | Byte-level control via BWS[3:0], allowing partial writes to any 9-bit subword without read-modify-write overhead |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, 0.8 mm ball pitch, JEDEC MO-270AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Write data inputs | 36-bit synchronous inputs sampled on rising edge of K/K; support full or byte-masked writes via BWS[3:0] |
| Q[35:0] | Read data outputs | 36-bit DDR outputs driven on rising edges of C/C; echo clocks CQ/CQ align with data valid window |
| A[17:0] | Multiplexed address bus | 18-bit address shared by read/write ports; latched on alternating K clock edges for pipelined access |
| WPS, RPS | Port enable controls | Active-low write/read port selects-enable depth expansion by stacking multiple devices with independent port enables |
| BWS[3:0] | Byte write selects | Four active-low signals controlling 9-bit byte lanes (BWS0→D[8:0], BWS3→D[35:27]); deselect preserves existing memory content |
| K, K, C, C, CQ, CQ | Timing reference clocks | K/K drive input registers; C/C drive output registers; CQ/CQ are delayed copies for source-synchronous capture at controller |
| DOFF | Read latency mode select | High = 1.5-cycle latency (for timing closure in high-skew systems); Low = 1-cycle latency (minimizes pipeline stages) |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Eliminates bus turnaround delay-enables back-to-back read/write operations without dead cycles |
| Four-word burst architecture | Reduces effective address bus frequency by 4×, lowering PCB routing complexity and signal integrity risk |
| Programmable DOFF latency | Allows system-level trade-off between timing margin (1.5-cycle) and pipeline efficiency (1-cycle) without hardware change |
| HSTL-compatible variable-drive outputs | Adjustable drive strength matches trace impedance-reduces overshoot/ringing on 10+ inch DDR buses |
| JTAG 1149.1 boundary scan | Enables production test coverage of high-speed interconnects without physical probe access to FBGA balls |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress packets in 10G/40G Ethernet switch ASICs with strict latency budgets. IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level packet buffer-reads forwarded frames while simultaneously writing newly received frames. Use Value: Concurrent read/write eliminates arbitration stalls; 1-cycle DOFF mode achieves ≤8 ns read latency critical for cut-through switching. | Use Scenario: Frame reassembly and header processing in OTN/framer-based optical transport equipment. IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory interfacing with SerDes PHYs and framer processors via dedicated DDR buses. Use Value: 36-bit × 4 burst delivers 144-bit payloads per cycle-matching OTU2/OTU3 frame segment widths without glue logic. |
| Radar Signal Processing | Industrial Real-Time Control |
Use Scenario: Storing digitized ADC samples and FFT intermediate results in phased-array radar beamforming modules. IC Role / Device Role / Timing Role: Time-critical data exchange buffer between ADC interface and DSP cores-synchronized to system K/C clocks. Use Value: Echo clocks CQ/CQ enable deterministic setup/hold timing at 250 MHz, meeting <0.3 UI jitter tolerance for 12-bit ADC streams. | Use Scenario: Motion control PLCs requiring deterministic memory access for servo loop updates at 10 kHz+ rates. IC Role / Device Role / Timing Role: Deterministic latency SRAM for real-time motion profile tables and encoder feedback storage. Use Value: 1.5-cycle DOFF mode provides extra timing margin for long PCB traces between FPGA and SRAM-guaranteeing zero missed updates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L10BG | 36-Mbit QDR II+, 167 MHz max frequency, 1.5 V core, no DOFF latency selection | Limited to 1-cycle latency only; lacks echo clocks for source-synchronous capture | Choose when lower power (1.5 V core) outweighs need for configurable latency or 250 MHz bandwidth |
| ISSI IS61WV102436B | 1 M × 36 sync SRAM, 166 MHz max, single-ended HSTL, no burst or echo clocks | No DDR interface-halves peak bandwidth; requires external address demux for depth expansion | Choose for cost-sensitive industrial control where 166 MHz bandwidth suffices and JTAG test is not required |
Compared with IDT72T36120L10BG and IS61WV102436B, CY7C1415KV18 uniquely delivers 250 MHz DDR operation with configurable latency and echo clocks-making it optimal for next-gen networking and radar systems demanding >3 Gbps sustained throughput and sub-10 ns timing determinism.
Availability
CY7C1415KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, radar signal processing, and industrial real-time control requiring stable component supply across extended temperature ranges (–40°C to +85°C).
Supply support for CY7C1415KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.
The QDR® II SRAM product line targets high-speed data-path applications requiring deterministic latency, concurrent access, and DDR bandwidth-specifically optimized for switch fabric, packet buffer, and real-time signal processing subsystems.
FAQ
What is the function of the DOFF pin on CY7C1415KV18?
The DOFF (Data Output Fall-off) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in high-skew systems; when LOW, it selects 1-cycle latency for minimal pipeline depth. This setting directly affects the number of clock cycles between address assertion and valid Q[35:0] output, and is sampled synchronously on the K clock edge.
How does the CY7C1415KV18 support depth expansion?
Depth expansion is achieved using independent port-select signals WPS (write port select) and RPS (read port select), both active-low. Multiple CY7C1415KV18 devices can be stacked with shared address and data buses, while individual WPS/RPS lines enable selective access-allowing seamless memory capacity scaling without external address decoding logic.
Can CY7C1415KV18 operate with only one clock signal?
Yes-the device supports single-clock mode where K = C and K = C. In this configuration, all input and output registers are clocked from the same pair, simplifying board layout at the cost of reduced timing flexibility. Echo clocks CQ/CQ remain functional and aligned to the single clock domain, preserving source-synchronous capture capability.
What is the purpose of BWS[3:0] in CY7C1415KV18?
BWS[3:0] (Byte Write Select) enables selective 9-bit byte writes to the 36-bit data bus: BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3 controls D[35:27]. When a BWS signal is deasserted (HIGH), its corresponding 9-bit lane retains prior content-eliminating need for read-modify-write sequences during partial updates.
CY7C1415KV18-250BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1415KV18-250BZI FAQ
1.How can I place an order for CY7C1415KV18-250BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1415KV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1415KV18-250BZI reliable?
The price and inventory of CY7C1415KV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1415KV18-250BZI is usually 5 days.
3.What payment methods are accepted for CY7C1415KV18-250BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1415KV18-250BZI transactions.
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4.How is shipping managed for CY7C1415KV18-250BZI?
CY7C1415KV18-250BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1415KV18-250BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1415KV18-250BZI?
For technical support, including CY7C1415KV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1415KV18-250BZI requirements.
6.How does Aetrix verify that CY7C1415KV18-250BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1415KV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1415KV18-250BZI meets industry standards.
7.What is the process for return or replacement of CY7C1415KV18-250BZI?
All CY7C1415KV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1415KV18-250BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1415KV18-250BZI part is unused and in its original packaging.
Return procedure for CY7C1415KV18-250BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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