Infineon Technologies CY7C1415KV18-250BZXC

Overview

CY7C1415KV18 from Cypress Semiconductor is a 1 M × 36, 36-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (400 Mbps per pin), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, echo clocks (CQ/CQ), and PLL-based DDR timing for high-bandwidth networking buffers in packet switching ASICs.

For engineers reviewing the CY7C1415KV18 datasheet, CY7C1415KV18 pinout, CY7C1415KV18 application, or CY7C1415KV18 equivalent, key selection criteria include 36-bit data width support, 18-bit address bus (A[17:0]), DOFF-controlled 1-cycle vs. 1.5-cycle read latency, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with high-speed PCB layout constraints.

Technical Context

This QDR II SRAM implements dual independent DDR interfaces: read port uses C/C clocks and Q[35:0] outputs with echo clock CQ/CQ for source-synchronous capture; write port uses K/K clocks and D[35:0] inputs with WPS and BWS[3:0] for byte-selectable writes. All address and control signals are registered on K-clock rising edges.

The device supports concurrent read/write operations via multiplexed A[17:0] address bus latched alternately per port, depth expansion using RPS/WPS, and programmable impedance via ZQ pin. Its internal 256K × 36 array organization enables full coherency without bus turnaround, critical for deterministic latency in telecom line cards.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L10BG and IS61QW3636-250BQ, CY7C1415KV18 uniquely supports dual VDDQ (1.4–1.8 V), DOFF-selectable latency, and ZQ-calibrated HSTL - making it optimal for mixed-voltage systems requiring timing flexibility and production testability.

Availability

CY7C1415KV18 is available at Aetrix Electronics and suitable for packet-switching ASICs, telecom line cards, LTE baseband processors, and real-time protocol accelerators requiring stable component supply across extended product lifecycles.

Supply support for CY7C1415KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

CY7C1415KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in ASIC- and FPGA-based communications infrastructure where concurrent read/write and sub-10 ns jitter are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1415KV18?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted LOW, the device operates in QDR I-compatible 1-cycle latency mode; when HIGH, it uses QDR II 1.5-cycle latency mode. This allows system designers to optimize timing margin versus throughput in their controller interface design without changing hardware.

How does the ZQ pin affect HSTL output driver performance?

The ZQ pin connects to an external 240 Ω resistor to ground and initiates on-die impedance calibration during initialization. This adjusts HSTL output driver strength to maintain consistent 50 Ω termination across process, voltage, and temperature variations-critical for maintaining signal integrity at 500 MT/s.

Can CY7C1415KV18 operate with only one clock domain (K = C)?

Yes - the device supports single-clock mode where K and C are tied together. In this configuration, all synchronous inputs and outputs are referenced to the same clock, simplifying timing analysis at the cost of reduced maximum bandwidth compared to dual-clock operation with optimized skew management.

What is the purpose of BWS[3:0] in the 36-bit configuration?

BWS[3:0] are active-low byte write select signals that independently enable or mask 9-bit byte groups within the 36-bit D[35:0] bus: BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3 controls D[35:27]. This enables partial-word writes without disturbing adjacent bytes in the memory array.