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Infineon Technologies CY7C1415KV18-300BZXC

Part No.:
CY7C1415KV18-300BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1415KV18-300BZXC.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
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Payment
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Inventory:114

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Product details

Overview

CY7C1415KV18 from Cypress Semiconductor is a 1 M × 36, 36-Mbit QDR® II SRAM with four-word burst architecture, 333 MHz clock operation (666 MHz DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent read/write transactions via independent ports and supports depth expansion using port-select signals in high-bandwidth networking and packet buffering applications.

For engineers reviewing the CY7C1415KV18 datasheet, CY7C1415KV18 pinout, CY7C1415KV18 application, or CY7C1415KV18 equivalent, key selection criteria include its 1 M × 36 organization, echo clock (CQ/CQ) support for timing margin, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, and 165-ball FBGA package compatibility with high-speed PCB layout constraints.

Technical Context

The CY7C1415KV18 implements QDR II architecture with physically separate read and write data paths, eliminating bus turnaround delays. Its memory array is organized as four 256K × 36 sub-arrays, accessed via a shared 18-bit address bus latched on rising edges of the K clock.

It uses dual input clocks (K/K) for address/data capture and dual output clocks (C/C) with echo clocks (CQ/CQ) to align data valid windows at the receiver. A built-in PLL ensures precise data placement relative to output clocks, and synchronous self-timed writes guarantee deterministic write completion without external handshaking.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization1 M × 36 (36-Mbit total); enables single-access retrieval of 36-bit wide data words in networking control plane buffers
Max Clock Frequency333 MHz (K/K, C/C); supports 666 MT/s effective throughput per port with DDR interfaces
Read Latency1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH); selectable to match system timing budget or pipeline depth
Supply VoltagesVDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O); allows interoperability with 1.5 V or 1.8 V logic families
Burst LengthFour-word burst; reduces address bus toggling frequency by 4× versus single-word access, easing routing and timing closure
Package165-ball FBGA (13 × 15 × 1.4 mm); provides 36 data pins (D[35:0]), 18 address pins (A[17:0]), and dedicated echo clocks for signal integrity
Write Select LogicBWS[3:0] byte write enables; permits partial 8-bit writes without read-modify-write, critical for header updates in packet processors

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Write data inputs36-bit synchronous inputs sampled on rising edge of K clock; support full or byte-wise writes via BWS[3:0]
Q[35:0]Read data outputs36-bit synchronous outputs driven on rising edge of C/C clocks; echo clocks (CQ/CQ) simplify source-synchronous capture
A[17:0]Address inputs18-bit multiplexed address bus latched on K clock rising edge; accesses 1 M × 36 array with no port-specific addressing
WPSWrite port selectActive-low synchronous enable; deassertion disables write path and ignores D[35:0], preventing unintended writes
RPSRead port selectActive-low synchronous enable; deassertion places Q[35:0] in high-impedance state, enabling bus sharing
BWS[3:0]Byte write selectsFour active-low signals controlling D[8:0], D[17:9], D[26:18], D[35:27]; allow granular 8-bit updates without disturbing adjacent bytes
K, KInput clocksDifferential pair driving all synchronous inputs; only rising edges used-simplifies clock tree design and timing analysis
C, COutput clocksDifferential pair governing Q[35:0] and CQ/CQ timing; minimizes skew between data and echo clocks for robust sampling
CQ, CQEcho clocksSource-synchronous clocks output with Q[35:0]; eliminate flight time mismatch, enabling reliable >600 MT/s capture at FPGA receivers
DOFFRead latency controlStatic input setting read latency to 1 cycle (LOW) or 1.5 cycles (HIGH); matches system pipeline stage count or jitter margin

Key Features

FeatureDesign Value
Independent read/write portsEnables true concurrent access-no arbitration or bus turnaround-critical for full-duplex packet buffering in switches/routers
Four-word burst + DDR interfaceDelivers 2.4 Gbps per port (333 MHz × 4 × 36 bits) while reducing address bus frequency by 4×, easing PCB trace routing
Programmable read latency (DOFF)Supports both 1-cycle (low-latency control plane) and 1.5-cycle (higher-jitter data plane) modes without hardware change
Source-synchronous echo clocks (CQ/CQ)Eliminates board-level clock-to-data skew, enabling reliable capture at 666 MT/s without complex delay tuning
JTAG 1149.1 test access portAllows boundary scan testing of high-density FBGA interconnects and in-system programming of configuration registers

Applications

Packet Buffering in Layer 3 SwitchesNetwork Processor Data Cache

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-speed SRAM acting as dual-port buffer between ingress parser and egress scheduler, synchronized to network line-rate clocks.

Use Value: Concurrent read/write eliminates serialization bottlenecks, enabling full line-rate forwarding at 10 Gbps+ with sub-100 ns latency.

Use Scenario: Serving as low-latency instruction/data cache for programmable network processors executing deep packet inspection algorithms.

IC Role / Device Role / Timing Role: QDR II SRAM providing zero-wait-state access to microcode and flow-state tables under real-time traffic load.

Use Value: Four-word burst and 1-cycle latency reduce average instruction fetch time by 60% versus single-port SRAM, improving DPI throughput.

Telecom Line Card Control MemoryHigh-Frequency Trading Engine Buffer

Use Scenario: Holding configuration state and statistics counters in carrier-grade SDH/SONET line cards requiring deterministic access.

IC Role / Device Role / Timing Role: Dual-port SRAM interfacing with FPGA-based control logic and ASIC-based framer, operating under ITU-T G.8262 sync requirements.

Use Value: Echo clocks (CQ/CQ) ensure <±50 ps clock-to-data skew, meeting telecom jitter tolerance for 155 Mbps–10 Gbps line rates.

Use Scenario: Acting as ultra-low-latency order book snapshot buffer in FPGA-accelerated trading systems where microseconds impact P&L.

IC Role / Device Role / Timing Role: Deterministic SRAM providing atomic read-modify-write for bid/ask levels, synchronized to 333 MHz system clock domain.

Use Value: Self-timed writes guarantee ≤1.5 ns write completion variance, enabling sub-200 ns round-trip order update latency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615036-Mbit QDR II+, 350 MHz max, 1.5 V core, supports 2-cycle read latency onlyLacks DOFF-selectable latency; requires fixed 2-cycle timing modelChoose when system timing margin exceeds 1.5-cycle requirement and 1.5 V supply simplifies power delivery
ISSI IS61WV102436B36-Mbit QDR II, 250 MHz max, 1.8 V core, no echo clocks or PLLNo CQ/CQ or PLL; relies on external clock alignment, limiting max reliable speed to 500 MT/sChoose for cost-sensitive designs where 1.2 Gbps/port bandwidth suffices and FPGA clock deskew is acceptable

Compared with IDT72T36150 and IS61WV102436B, CY7C1415KV18 uniquely offers DOFF-configurable latency and integrated echo clocks-enabling both low-latency control-plane use and robust high-speed data-plane capture without external timing compensation.

Availability

CY7C1415KV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor caching, telecom line card memory, and low-latency trading engine applications requiring stable component supply across extended production lifecycles.

Supply support for CY7C1415KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR® II SRAM product line was designed specifically for bandwidth-constrained, low-latency applications in networking infrastructure-delivering deterministic dual-port access without arbitration overhead or bus turnaround penalties.

FAQ

What is the function of the DOFF pin on CY7C1415KV18?

The DOFF (Data Output OFFset) pin configures read latency: when asserted LOW, it enables 1-cycle read latency for minimal access delay; when HIGH, it enables 1.5-cycle latency to accommodate tighter setup/hold margins in high-jitter clock domains. This is a static configuration set at power-up and does not affect write timing or burst behavior.

How does the CY7C1415KV18 handle partial writes to its 36-bit data bus?

Partial writes are controlled by the BWS[3:0] (Byte Write Select) inputs, each enabling one 8-bit byte of the 36-bit D[35:0] bus. When a BWS bit is deasserted (HIGH), the corresponding byte remains unaltered-no read-modify-write is required. This enables efficient header field updates in packet processing without corrupting adjacent payload bytes.

Can CY7C1415KV18 operate with only a single clock source instead of differential K/K and C/C pairs?

Yes-the device supports single-clock mode where K drives both input functions and C drives all output registers. In this mode, echo clocks (CQ/CQ) remain functional but are derived from C. However, differential clocking is strongly recommended for >250 MHz operation to maintain timing margin and reduce EMI in dense PCB layouts.

What is the purpose of the NC/72M, NC/144M, and NC/288M pins on the 165-ball FBGA?

These pins are no-connects tied internally to die substrate and electrically isolated from active circuitry. They may be left floating, tied to ground, or connected to VDDQ-no electrical effect results. Their presence accommodates pinout compatibility across the CY7C14xxKV18 family (×8, ×9, ×18, ×36) within the same FBGA footprint.

CY7C1415KV18-300BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1415KV18-300BZXC FAQ

1.How can I place an order for CY7C1415KV18-300BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1415KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1415KV18-300BZXC reliable?

The price and inventory of CY7C1415KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1415KV18-300BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1415KV18-300BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1415KV18-300BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1415KV18-300BZXC?

CY7C1415KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1415KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1415KV18-300BZXC?

For technical support, including CY7C1415KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1415KV18-300BZXC requirements.

6.How does Aetrix verify that CY7C1415KV18-300BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1415KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1415KV18-300BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1415KV18-300BZXC?

All CY7C1415KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1415KV18-300BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1415KV18-300BZXC part is unused and in its original packaging.

Return procedure for CY7C1415KV18-300BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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