Infineon Technologies CY7C1418AV18-250BZC
- Part No.:
- CY7C1418AV18-250BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1418AV18-250BZC.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1418AV18-250BZC from Cypress Semiconductor is a 36 Mbit (2M × 18) synchronous pipelined DDR II SRAM with two-word burst architecture, 250 MHz maximum operating frequency, 1.8 V core supply, and HSTL I/O compatible with 1.4–1.8 V output drive range. It delivers 600 Mbps effective data rate via double-data-rate transfers synchronized to K/K and C/C clock pairs, deployed in high-bandwidth packet buffering for telecom line cards.
For engineers reviewing the CY7C1418AV18-250BZC datasheet, CY7C1418AV18-250BZC pinout, CY7C1418AV18-250BZC application, or CY7C1418AV18-250BZC equivalent, key selection criteria include DDR II burst timing compliance, echo clock (CQ/CQ) synchronization capability, DLL-enabled data placement accuracy, and FBGA-165 package thermal/mechanical compatibility with dense PCB layouts.
Technical Context
This SRAM implements a synchronous pipelined architecture where all address, control, and data inputs are registered on rising edges of complementary K/K clocks, and all outputs are edge-aligned to C/C or K/K in single-clock mode. The internal burst counter uses A0 to generate sequential 18-bit word addresses during each access.
Read and write operations are fully synchronous and self-timed; writes use on-chip circuitry to complete without external wait states. Echo clocks CQ/CQ are free-running, phase-aligned to C/C, enabling controller-side deskewing across multiple devices without per-pin delay tuning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 36 Mbit (2M × 18 configuration) |
| Max Clock Frequency | 250 MHz K/K input clock - defines maximum sustained transaction rate |
| Data Rate | 600 Mbps effective (DDR at 250 MHz) - doubles bandwidth without increasing clock frequency |
| Core Supply | 1.8 V ± 0.1 V - powers SRAM array and logic; enables low-power high-speed operation |
| I/O Standard | HSTL Class I - supports 1.4–1.8 V programmable output drive for impedance-matched signaling |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - fine-pitch, thermally efficient for multi-layer routing |
| Timing Reference | DLL-based data placement - ensures <±50 ps output jitter relative to C/C for reliable capture at 600 Mbps |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant, 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data bus | Tri-stated automatically after read deselect; latched on K/K rising edges for writes; driven on C/C rising edges for reads |
| K, K | Complementary input clocks | Control all synchronous inputs (address, R/W, LD, BWS); rising edges define setup/hold windows and initiate transactions |
| C, C | Complementary output clocks | Reference timing for Q[17:0] output edges; used with CQ/CQ to eliminate flight-time skew across memory subsystems |
| CQ, CQ | Echo clocks | Free-running, phase-aligned copies of C/C; simplify controller-side data capture without per-device delay calibration |
| LD | Load strobe | Active-low synchronous signal that latches address and R/W on next K edge; initiates every burst transaction |
| BWS[1:0] | Byte write selects | Active-low controls which 9-bit byte (D[8:0] or D[17:9]) is written; enables partial-word updates without read-modify-write overhead |
| ZQ | Impedance calibration reference | Connect to external 240 Ω resistor to GND to calibrate output driver strength to match 50 Ω trace impedance |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces external address bus toggling by 50% per transaction - lowers EMI and simplifies controller address generation logic |
| Integrated Delay Lock Loop (DLL) | Eliminates need for external phase alignment circuitry - ensures sub-100 ps data-to-clock alignment at 250 MHz operation |
| HSTL Class I I/O with variable drive | Supports 1.4–1.8 V output swing - allows dynamic adjustment to match board trace impedance and reduce signal integrity margin loss |
| JTAG 1149.1 test port | Enables boundary-scan testing of interconnects in high-density memory modules - reduces test development time and improves manufacturing yield |
| Single-clock mode support | C/C pins strapped HIGH at power-on - permits simplified clock tree design when system-level skew between input and output clocks is tightly controlled |
Applications
| Telecom Packet Buffering | Network Processor Interface |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in 10G/40G line interface cards requiring deterministic latency and zero wait-state throughput. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfacing directly to network processor AXI or PLB buses via DDR II protocol. Use Value: 600 Mbps effective bandwidth and DLL-aligned echo clocks enable precise timing closure at 250 MHz, eliminating need for external FIFOs or glue logic. | Use Scenario: Serving as instruction/data cache for multi-threaded network processors executing deep packet inspection and classification algorithms. IC Role / Device Role / Timing Role: Synchronous burst-access memory providing dual-word fetches per cycle to feed parallel execution units without pipeline stalls. Use Value: Two-word burst mode halves address bus transitions, reducing controller logic complexity and PCB routing congestion in space-constrained NPU modules. |
| Test Equipment Memory Subsystem | High-Speed Data Acquisition Buffer |
Use Scenario: Capturing real-time waveform samples from multi-channel ADCs in automated test equipment with >200 MS/s aggregate throughput. IC Role / Device Role / Timing Role: Depth-expanded memory bank using multiple CY7C1418AV18-250BZC devices synchronized via common C/C and CQ/CQ nets. Use Value: Echo clocks (CQ/CQ) allow controller to capture data from all devices simultaneously without per-device delay tuning - critical for channel-to-channel skew <100 ps. | Use Scenario: Buffering transient sensor data streams from industrial vibration monitors or RF spectrum analyzers before host CPU transfer. IC Role / Device Role / Timing Role: Low-latency, burst-capable SRAM acting as first-stage circular buffer between high-speed serial interfaces (e.g., JESD204B) and DMA controllers. Use Value: 1.8 V core + HSTL I/O minimizes switching noise coupling into analog front-end sections while maintaining 600 Mbps sustained write rate. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV102418BLL-250BLI | 1.8 V, 2M × 18, 250 MHz, but lacks DLL and echo clocks (CQ/CQ); uses single-ended clocking only | Requires external deskew circuitry or tighter board layout control for >200 MHz operation; not suitable for multi-device synchronous capture | Select when cost sensitivity outweighs timing precision requirements and system clock skew is <50 ps |
| Renesas R1EX24016ASB-250#U0 | 250 MHz, 2M × 18, includes DLL but no echo clocks; supports LVDS I/O instead of HSTL | LVDS interface increases power vs. HSTL at same speed; requires differential routing and termination, limiting PCB layer count flexibility | Select when existing platform uses LVDS infrastructure and board area permits differential pair routing |
Compared with IS61WV102418BLL-250BLI and R1EX24016ASB-250#U0, CY7C1418AV18-250BZC uniquely combines echo clocks, DLL, and HSTL I/O in a single package-enabling robust 600 Mbps operation across multi-device memory banks without custom timing compensation.
Availability
CY7C1418AV18-250BZC is available at Aetrix Electronics and suitable for telecom line card design, network processor integration, and high-speed test equipment requiring stable component supply, long-term lifecycle assurance, and Pb-free compliance.
Supply support for CY7C1418AV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing-critical applications.
CY7C1418AV18 belongs to Cypress's DDR II synchronous SRAM product line, engineered specifically for deterministic-latency, high-throughput buffering in packet-switched infrastructure where echo-clock synchronization and DLL-based data placement are essential.
FAQ
What is the function of the ZQ pin on CY7C1418AV18-250BZC?
The ZQ pin is an impedance calibration reference input. It must be connected to a 240 Ω resistor tied to ground to calibrate the output driver strength of DQ[17:0], CQ, and CQ pins to match 50 Ω transmission lines. Direct connection to VDDQ enables minimum impedance mode; leaving it unconnected or tying to GND violates specification and causes undefined output behavior.
Can CY7C1418AV18-250BZC operate without the DLL enabled?
Yes - the DOFF pin (pin A13) disables the DLL when pulled LOW. In DLL-off mode, timing parameters change significantly: tAC increases to 2.8 ns (vs. 1.8 ns typical with DLL), and data-to-clock alignment degrades beyond ±150 ps. This mode is intended only for validation or fallback operation; full 250 MHz performance requires DLL enabled.
How does the two-word burst architecture affect address sequencing?
The burst counter uses A0 to generate consecutive addresses: on a read or write with LD asserted, the device accesses the location specified by A[20:1], then automatically increments A0 to fetch or store the second 18-bit word from the next sequential address. No external address increment logic is required - the entire 2-word transfer completes in two C/C clock cycles.
Is CY7C1418AV18-250BZC pin-compatible with other speeds in the same family?
Yes - all CY7C1418AV18 variants (e.g., -300BZC, -278BZC, -250BZC, -200BZC) share identical 165-ball FBGA pinout, electrical interface, and command protocol. Speed grade differences reflect tested maximum frequency; lower-speed grades may operate at higher frequencies but are not guaranteed, and timing margins shrink accordingly.
CY7C1418AV18-250BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1418AV18-250BZC FAQ
1.How can I place an order for CY7C1418AV18-250BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1418AV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1418AV18-250BZC reliable?
The price and inventory of CY7C1418AV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1418AV18-250BZC is usually 5 days.
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Once your CY7C1418AV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1418AV18-250BZC?
For technical support, including CY7C1418AV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1418AV18-250BZC requirements.
6.How does Aetrix verify that CY7C1418AV18-250BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1418AV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1418AV18-250BZC meets industry standards.
7.What is the process for return or replacement of CY7C1418AV18-250BZC?
All CY7C1418AV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1418AV18-250BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1418AV18-250BZC part is unused and in its original packaging.
Return procedure for CY7C1418AV18-250BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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