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Infineon Technologies CY7C1418AV18-267BZC

Part No.:
CY7C1418AV18-267BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1418AV18-267BZC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,324

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Product details

Overview

CY7C1418AV18-267BZC from Cypress Semiconductor is a 36 Mbit (2M × 18) synchronous pipelined DDR II SRAM with two-word burst architecture, 300 MHz K/K clock input, 600 Mbps DDR data transfer rate, and HSTL I/O interface operating at 1.8 V core supply. It serves as high-bandwidth buffer memory in network packet processors requiring precise timing alignment between address, control, and echo-clocked data paths.

For engineers reviewing the CY7C1418AV18-267BZC datasheet, CY7C1418AV18-267BZC pinout, CY7C1418AV18-267BZC application, or CY7C1418AV18-267BZC equivalent, key selection criteria include DDR II burst timing compliance, C/C and CQ/CQ echo clock synchronization, HSTL output drive adjustability, and FBGA-165 package thermal/mechanical compatibility with high-speed PCB routing constraints.

Technical Context

This SRAM implements a synchronous pipelined architecture where all inputs (address, R/W, LD, BWS) are registered on rising edges of K/K clocks, and all outputs (DQ, CQ/CQ) are edge-aligned to C/C clocks. The internal burst counter uses A0 to generate sequential 18-bit word addresses during each access cycle.

It integrates a Delay Lock Loop (DLL) for sub-cycle data placement accuracy and supports both dual-clock (K/K + C/C) and single-clock (K/K only, with C/C strapped high) operation modes. Echo clocks CQ/CQ are free-running, phase-aligned replicas of C/C referenced to device outputs, enabling controller-side deskewing without per-device timing calibration.

Key Specifications

ParameterValue and Actual Design Meaning
Density36 Mbit (2M × 18 configuration)
Max Clock Frequency300 MHz K/K input - defines maximum sustained burst throughput of 1.2 GB/s (2 × 18-bit words × 300 MHz)
Data Rate600 Mbps DDR - data transferred on both rising edges of C/C, enabling full bandwidth without doubling physical clock frequency
I/O StandardHSTL Class I - 1.4 V–1.8 V programmable output voltage range with ZQ impedance calibration support
Core Supply1.8 V ± 0.1 V - powers internal SRAM array and logic; separate VDDQ (1.8 V) supplies I/O buffers
Package165-ball FBGA (15 mm × 17 mm × 1.4 mm) - fine-pitch, thermally enhanced package suitable for high-density routing and controlled-impedance DDR traces
Timing ModeSynchronous self-timed writes - eliminates external write pulse width constraints; internal logic manages write latency and array settling

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm footprint, 1.4 mm height, RoHS-compliant Pb-free option available.

Pin/TerminalCircuit RoleDesign Meaning
DQ[17:0]Synchronous bidirectional data busTri-stated automatically after read completion; latched on K/K rising edges during writes; driven on C/C rising edges during reads
K / KPositive/negative input clock pairCapture all synchronous inputs (address, R/W, LD, BWS); define access initiation edge; used for output timing in single-clock mode
C / CPositive/negative output clock pairControl timing of DQ and CQ/CQ outputs; enable board-level flight time deskewing across multiple SRAMs
CQ / CQOutput echo clocksFree-running, phase-aligned copies of C/C referenced to DQ outputs - simplify controller-side data capture without per-pin delay tuning
LDLoad strobeActive-low synchronous signal defining start of burst transaction; must meet setup/hold relative to K edge
BWS[1:0]Byte write selectIndependent active-low controls for DQ[8:0] (BWS0) and DQ[17:9] (BWS1); allow partial-word writes without read-modify-write overhead
ZQImpedance calibration referenceConnect to external 240 Ω resistor to GND to calibrate DQ/CQ output driver strength to match 50 Ω system trace impedance
DOFFDLL disableActive-low pin disabling internal Delay Lock Loop - used only for debug or low-power standby; invalidates published timing specs

Key Features

FeatureDesign Value
Two-word burst architectureReduces address bus toggling by 50% per access - lowers system EMI and simplifies address multiplexing in depth-expanded memory banks
Integrated DLL with echo clocks (CQ/CQ)Enables deterministic ±50 ps data valid window at 600 Mbps - eliminates need for per-SRAM trace length matching in multi-device systems
Variable-drive HSTL outputsSupports 1.4 V–1.8 V VDDQ range and ZQ calibration - maintains signal integrity across varying PCB stackup loss and temperature drift
Synchronous self-timed writesRemoves external write pulse width dependency - allows seamless integration with fixed-latency controllers without added timing margin overhead
JTAG 1149.1 test portEnables boundary-scan testing of interconnects to DQ/C/CQ pins - critical for validating high-speed DDR routing on production PCBs

Applications

Network Packet BufferTelecom Line Card Cache

Use Scenario: Storing ingress/egress packet headers and metadata in 10G Ethernet switch ASICs with strict latency budgets.

IC Role / Device Role / Timing Role: High-throughput, low-latency burst-access SRAM acting as first-level buffering between SERDES PHY and traffic manager.

Use Value: 300 MHz K/K clock + DDR data transfer delivers 1.2 GB/s bandwidth while echo clocks (CQ/CQ) eliminate controller-side deskew logic, reducing FPGA resource usage by ~12%.

Use Scenario: Holding real-time voice channel samples and protocol state in carrier-grade TDM-to-Packet gateways.

IC Role / Device Role / Timing Role: Synchronous pipeline memory interfacing directly with DSP cores using HSTL-compatible 1.8 V I/O voltage domain.

Use Value: ZQ-calibrated HSTL outputs maintain <0.3 UI jitter at 600 Mbps across -40°C to +85°C, ensuring bit-error-rate <1e-15 in 24/7 operation.

Baseband Processing BufferRadar Signal Preprocessor

Use Scenario: Temporary storage of OFDMA symbol data between FFT engines and channel encoders in LTE eNodeB baseband units.

IC Role / Device Role / Timing Role: Burst-mode SRAM synchronized to baseband clock domain with precise C/C-controlled read timing.

Use Value: Two-word burst reduces address bus transitions by half versus single-word SRAM, cutting dynamic power consumption by 22% in continuous streaming mode.

Use Scenario: Capturing and staging chirp-matched filter outputs in phased-array radar front-ends before ADC digitization.

IC Role / Device Role / Timing Role: Low-jitter, deterministic-latency memory providing time-aligned sample bursts to high-speed ADC interface logic.

Use Value: DLL-synchronized CQ/CQ outputs ensure ±35 ps data valid window at 250 MHz operation, meeting JEDEC JESD204B subclass 1 timing requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C33618A-20BIN200 MHz max clock, no echo clocks (CQ/CQ), no DLL, SSTL-2 I/OLacks DDR II timing precision; requires external deskew circuitry and tighter layout controlSelect only if system clock ≤200 MHz and controller handles full data capture timing
IS61WV102418BLL-10BLI100 MHz async SRAM, no burst, no DDR, 3.3 V core/I/ONo clock domain alignment; incompatible with DDR II timing architecture or HSTL signalingNot a functional substitute - only viable for non-burst, non-DDR legacy designs with voltage tolerance

Compared with AS7C33618A-20BIN and IS61WV102418BLL-10BLI, CY7C1418AV18-267BZC uniquely delivers 300 MHz DDR II burst operation with integrated DLL and echo clocks - essential for deterministic timing in >1 Gbps memory interfaces where per-pin skew management is impractical.

Availability

CY7C1418AV18-267BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, and baseband processing applications requiring stable component supply, long-lifecycle support, and guaranteed Pb-free manufacturing compliance.

Supply support for CY7C1418AV18-267BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital ICs for industrial, automotive, and communications markets.

CY7C1418AV18 belongs to Cypress's DDR II SyncBurst SRAM product line, designed specifically for high-throughput, low-latency buffering in networking and wireless infrastructure equipment where deterministic DDR timing and echo-clock–assisted data capture are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1418AV18-267BZC?

The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the DLL stops adjusting output timing, resulting in increased data valid window uncertainty and invalidating all timing parameters specified in the datasheet. It is intended only for debug or low-power standby modes-not normal operation.

Can CY7C1418AV18-267BZC operate without external C/C clocks?

Yes - it supports single-clock mode where C and C are strapped HIGH at power-on. In this mode, K/K clocks control both input registration and output timing, and CQ/CQ are generated relative to K/K. All timing parameters remain unchanged, but board-level deskewing capability is lost since echo clocks no longer track C/C flight time variations.

How does ZQ calibration affect signal integrity?

ZQ calibration adjusts the output driver strength of DQ, CQ, and CQ pins to match a 240 Ω external resistor to ground, targeting 50 Ω trace impedance. This minimizes reflections and ensures consistent rise/fall times across temperature and voltage, maintaining <0.3 UI jitter at 600 Mbps - critical for reliable eye opening in high-speed DDR links.

Is CY7C1418AV18-267BZC pin-compatible with CY7C1420AV18-267BZC?

No - although both use the same 165-ball FBGA package, their pinouts differ significantly. CY7C1418AV18-267BZC has DQ[17:0], BWS[1:0], and 21 address lines (A[20:0]), while CY7C1420AV18-267BZC has DQ[35:0], BWS[3:0], and 20 address lines (A[19:0]). Interchangeability would require PCB redesign and firmware changes to accommodate different data width and burst addressing.

CY7C1418AV18-267BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
267 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1418AV18-267BZC FAQ

1.How can I place an order for CY7C1418AV18-267BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1418AV18-267BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1418AV18-267BZC reliable?

The price and inventory of CY7C1418AV18-267BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1418AV18-267BZC is usually 5 days.

3.What payment methods are accepted for CY7C1418AV18-267BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1418AV18-267BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1418AV18-267BZC?

CY7C1418AV18-267BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1418AV18-267BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1418AV18-267BZC?

For technical support, including CY7C1418AV18-267BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1418AV18-267BZC requirements.

6.How does Aetrix verify that CY7C1418AV18-267BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1418AV18-267BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1418AV18-267BZC meets industry standards.

7.What is the process for return or replacement of CY7C1418AV18-267BZC?

All CY7C1418AV18-267BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1418AV18-267BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1418AV18-267BZC part is unused and in its original packaging.

Return procedure for CY7C1418AV18-267BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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