Infineon Technologies CY7C1418AV18-267BZXC
- Part No.:
- CY7C1418AV18-267BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1418AV18-267BZXC.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,000
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Product details
Overview
CY7C1418AV18-267BZXC from Cypress Semiconductor is a 36 Mbit (2M × 18) synchronous pipelined DDR II SRAM with two-word burst architecture, 300 MHz K-clock operation, 600 Mbps DDR data transfer rate, and 1.8 V core supply. It serves as high-bandwidth buffer memory in network packet processors requiring low-latency, burst-aligned data access.
For engineers reviewing the CY7C1418AV18-267BZXC datasheet, CY7C1418AV18-267BZXC pinout, CY7C1418AV18-267BZXC application, or CY7C1418AV18-267BZXC equivalent, key selection criteria include DDR II timing compliance, HSTL I/O compatibility, DLL-enabled data placement accuracy, and FBGA-165 mechanical fit for dense routing.
Technical Context
This SRAM implements a synchronous pipelined architecture with dual input clocks (K/K) for address/control latching and dual output clocks (C/C) for data strobing. Its internal burst counter uses A0 to generate sequential 18-bit word addresses on alternate K edges, enabling two-word bursts without external address incrementing.
The device integrates echo clocks (CQ/CQ) synchronized to C/C for source-synchronous data capture, and supports both dual-clock (DDR) and single-clock modes via strap configuration. All writes are internally self-timed, and ZQ pin enables dynamic output impedance tuning to match system bus termination.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 36 Mbit (2M × 18), enabling 2M-word storage with 18-bit parallel interface |
| Max Clock Frequency | 300 MHz K-clock, supporting 600 Mbps effective data rate in DDR mode |
| I/O Voltage | HSTL Class I compliant (VDDQ = 1.8 V, VREF referenced), ensuring signal integrity at high speed |
| Burst Length | Fixed two-word burst, reducing address bus toggling and simplifying controller logic |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm), optimized for thermal dissipation and PCB trace density |
| Core Supply | 1.8 V ± 0.1 V, minimizing dynamic power while maintaining timing margins |
| Output Drive | Variable-strength HSTL outputs (1.4 V–VDDQ range), allowing fine-tuned slew control |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm footprint, 1.4 mm height, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data | 18-bit DDR data bus shared for read/write; driven on C/C rising edges during reads, sampled on K/K rising edges during writes |
| K / K | Positive/negative input clock | Edge-triggered master clocks for all synchronous inputs (address, R/W, LD, BWS); define pipeline stages |
| C / C | Positive/negative output clock | Deskew-capable clocks for read data output; enable board-level flight time compensation across multiple devices |
| CQ / CQ | Echo clocks referenced to C/C | Free-running source-synchronous clocks aligned to Q[17:0] edges, eliminating need for separate capture logic |
| LD | Synchronous load strobe | Initiates each burst transaction on K edge; defines address and R/W direction for the full two-word cycle |
| BWS[1:0] | Byte write select (active LOW) | Independent control of D[8:0] (BWS0) and D[17:9] (BWS1); enables partial-word writes without read-modify-write overhead |
| ZQ | Impedance calibration reference | Connects to external resistor to ground to calibrate output driver strength to 0.2 × RQ, matching PCB trace impedance |
| DOFF | DLL disable control | Active-LOW pin to bypass Delay Lock Loop; used only when DLL-induced jitter outweighs skew correction benefit |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces external address bus frequency by 50% versus single-word SRAM, easing controller timing closure |
| Integrated DLL with echo clocks (CQ/CQ) | Enables deterministic ±50 ps data-to-clock alignment at 300 MHz, eliminating per-device capture tuning |
| HSTL Class I I/O with variable drive | Supports 1.4–1.8 V output swing and programmable slew rate, matching diverse FPGA/ASIC receiver thresholds |
| On-chip self-timed write | Removes external write pulse width constraints; guarantees reliable write completion within one K-cycle window |
| JTAG 1149.1 test access port | Enables boundary scan testing and in-system debug without additional test fixtures or probe points |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM buffer interfacing directly to MAC-layer controllers via DDR HSTL bus. Use Value: Two-word burst reduces controller address generation overhead; DLL-aligned CQ clocks ensure reliable 600 Mbps header parsing without retiming logic. | Use Scenario: Holding real-time voice sample buffers and signaling tables in TDM-over-packet gateways. IC Role / Device Role / Timing Role: Synchronous burst memory providing deterministic 300 MHz read/write access to DSP co-processors. Use Value: Variable-drive HSTL outputs maintain signal integrity across long backplane traces; ZQ calibration adapts to temperature-induced impedance drift. |
| Industrial PLC Data Logging | Test Equipment Pattern Memory |
Use Scenario: Capturing sensor timestamped values at 100 kS/s in deterministic automation controllers. IC Role / Device Role / Timing Role: Burst-aligned SRAM acting as circular buffer between ADC interface and ARM-based host processor. Use Value: Single-clock mode simplifies timing integration with microcontroller GPIO; LD-controlled burst ensures atomic sample group writes. | Use Scenario: Storing stimulus/response vectors for high-speed digital pattern generators operating at 300 MHz. IC Role / Device Role / Timing Role: DDR II SRAM delivering consecutive 18-bit test words synchronized to pattern generator clock domain. Use Value: C/C deskew capability eliminates inter-device skew across multi-SRAM vector banks; BWS[1:0] enables selective vector patching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C362000B-20BIN | 20 ns async access, no DDR interface or DLL; 3.3 V core; SOJ-54 package | Lacks burst, echo clocks, and HSTL - suitable only for legacy non-pipelined systems | Select only if DDR timing and 1.8 V operation are not required and board layout cannot accommodate FBGA |
| IS61WV102418BLL-10BLI | 10 ns async access, 1.8 V core, but no DDR, no burst, no echo clocks; 100-pin TQFP | Lower bandwidth, higher latency, no source-synchronous timing - limited to moderate-speed buffering | Choose when cost sensitivity outweighs performance needs and JTAG/testability is unnecessary |
Compared with AS7C362000B-20BIN and IS61WV102418BLL-10BLI, CY7C1418AV18-267BZXC delivers 3× higher effective bandwidth via DDR + burst, eliminates external skew compensation with CQ/CQ, and enables deterministic timing closure in 300 MHz systems - critical for next-gen networking and test equipment.
Availability
CY7C1418AV18-267BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial PLC data logging requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for CY7C1418AV18-267BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications markets.
CY7C1418AV18 belongs to the DDR II SyncBurst SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where burst efficiency and source-synchronous timing are mandatory.
FAQ
What is the function of the DOFF pin?
The DOFF pin disables the internal Delay Lock Loop when pulled LOW. This bypasses DLL-based data alignment, reverting timing to basic K/K-driven output registration. Use only when DLL-induced jitter exceeds board-level skew benefits - timing parameters shift significantly and require revalidation per the "DLL Off" section of the datasheet.
Can CY7C1418AV18-267BZXC operate without external C and C clocks?
Yes - it supports single-clock mode. Tie C and C HIGH at power-on to configure the device to use K/K for both input sampling and output driving. In this mode, all timing references derive from K/K, eliminating need for separate output clocks but forfeiting C/C deskew capability and echo clock advantages.
How does ZQ calibration affect signal integrity?
ZQ calibration adjusts output driver strength to match the system's data bus characteristic impedance. Connecting ZQ to a precision resistor to ground sets output impedance to 0.2 × RQ, minimizing reflections and improving eye diagram margin. Leaving ZQ unconnected or tied to GND violates specification and causes undefined output behavior.
Is the CY7C1418AV18-267BZXC pin-compatible with CY7C1420AV18?
No - they are not pin-compatible. CY7C1418AV18 (2M × 18) uses DQ[17:0], BWS[1:0], and 21 address bits (A[20:0]), while CY7C1420AV18 (1M × 36) uses DQ[35:0], BWS[3:0], and 20 address bits (A[19:0]). Pin assignments differ significantly in ball map, especially for data, byte selects, and address lines.
CY7C1418AV18-267BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 267 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1418AV18-267BZXC FAQ
1.How can I place an order for CY7C1418AV18-267BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1418AV18-267BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1418AV18-267BZXC reliable?
The price and inventory of CY7C1418AV18-267BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1418AV18-267BZXC is usually 5 days.
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Once your CY7C1418AV18-267BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1418AV18-267BZXC?
For technical support, including CY7C1418AV18-267BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1418AV18-267BZXC requirements.
6.How does Aetrix verify that CY7C1418AV18-267BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1418AV18-267BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1418AV18-267BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1418AV18-267BZXC?
All CY7C1418AV18-267BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1418AV18-267BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1418AV18-267BZXC part is unused and in its original packaging.
Return procedure for CY7C1418AV18-267BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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