Infineon Technologies CY7C1418BV18-250BZC

Overview

CY7C1418BV18 from Cypress Semiconductor is a 36-Mbit (2M × 18) synchronous pipelined DDR-II SRAM with 1.8V core supply, 267 MHz clock support, and dual 1.5-cycle read latency (DLL enabled) or 1-cycle latency (DLL disabled). It features HSTL I/O, echo clocks (CQ/CQ), and burst-2 architecture for high-bandwidth packet buffering in network line cards.

For engineers reviewing the CY7C1418BV18 datasheet, CY7C1418BV18 pinout, CY7C1418BV18 application, or CY7C1418BV18 equivalent, key selection criteria include DDR-II timing compliance, 165-ball FBGA mechanical compatibility, HSTL-18 drive strength matching, and DLL-enabled vs. DLL-disabled latency trade-offs in high-speed memory subsystems.

Technical Context

This SRAM implements a synchronous pipelined architecture with two independent clock domains: K/K for address/control/data input registration and C/C for output data strobing. Burst counter logic uses A0 as LSB input to sequence two 18-bit words per access.

Internal Delay Lock Loop (DLL) aligns CQ/CQ echo clocks to output data edges with sub-cycle precision when enabled; disabling DLL via DOFF pin reverts operation to DDR-I timing with 1-cycle latency and ≤167 MHz max frequency.

Key Specifications

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm footprint, 1.4 mm height, 0.8 mm ball pitch, RoHS-compliant lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IS61WV102418B and 23LC1024, CY7C1418BV18 uniquely delivers DDR-II timing, DLL-adjustable latency, and echo-clock–assisted capture-enabling deterministic 250 MHz operation in systems where timing margin and multi-device synchronization are design-critical.

Availability

CY7C1418BV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, test equipment data capture, and industrial real-time control applications requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1418BV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with emphasis on signal integrity and timing precision.

CY7C1418BV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for deterministic-latency, high-bandwidth buffering in packet-switched infrastructure where DDR-I timing margins are insufficient.

FAQ

What is the minimum setup/hold time requirement for LD relative to the K clock edge?

LD must meet a 0.5 ns setup time and 0.4 ns hold time relative to the rising edge of K, as specified in the "AC Switching Characteristics" table (page 23 of Rev. *D datasheet). These values assume 1.8V VDD/VDDQ, 0°C–70°C, and HSTL-18 load conditions.

Can CY7C1418BV18 operate with only K and K clocks, omitting C and C?

Yes-when C and C are unconnected, the device defaults to single-clock mode: read data is driven on the rising edges of K and K instead, maintaining burst-2 functionality but losing echo-clock–assisted deskew capability and limiting max frequency to 200 MHz per timing tables.

How does ZQ pin calibration affect output impedance and signal integrity?

ZQ connects to a 240 Ω resistor to ground, trimming DQ and CQ output drivers to 48 Ω ±15%. This matches standard PCB trace impedances, reducing reflections and improving eye diagram margin at 500 MT/s-critical for maintaining <0.2 UI jitter on DDR-II data lanes.

What happens to read latency when DOFF is pulled LOW during active operation?

Pulling DOFF LOW immediately disables the DLL, switching the device to DDR-I timing mode with 1-cycle read latency. However, this requires reducing clock frequency to ≤167 MHz; attempting 250 MHz operation in DDR-I mode violates AC timing specs and risks data corruption.