Infineon Technologies CY7C1418BV18-250BZXC

Overview

CY7C1418BV18-250BZXC from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR-II synchronous pipelined SRAM with 2-word burst architecture, 250 MHz maximum operating frequency, 1.8 V core supply, and HSTL I/O. It delivers 500 MB/s bandwidth via double-data-rate transfers synchronized to echo clocks CQ/CQ, and is used in high-speed packet buffering for network switches and telecom line cards.

For engineers reviewing the CY7C1418BV18-250BZXC datasheet, CY7C1418BV18-250BZXC pinout, CY7C1418BV18-250BZXC application, or CY7C1418BV18-250BZXC equivalent, key selection criteria include DDR-II timing compliance, DLL-enabled 1.5-cycle read latency, 165-ball FBGA (15 × 17 mm) mechanical compatibility, and HSTL-18 I/O voltage tolerance with variable drive strength.

Technical Context

This SRAM implements a synchronous pipelined architecture with dual input clocks (K/K) for address/data capture and dual output clocks (C/C) for data launch, enabling precise DDR timing control. Burst counter logic uses A0 as LSB input to sequence two 18-bit words per access, eliminating external address sequencing logic.

The integrated Delay Lock Loop (DLL) aligns internal data paths to achieve 1.5-cycle read latency at 250 MHz when DOFF = HIGH; disabling DLL via DOFF = LOW reverts operation to DDR-I mode with 1-cycle latency and ≤167 MHz max frequency. Echo clocks CQ/CQ are free-running and phase-aligned to C/C, simplifying system-level data capture without per-device skew compensation.

Key Specifications

Pinout & Package

165-ball FBGA (15 × 17 × 1.4 mm) with 0.8 mm ball pitch; thermal pad exposed on underside for enhanced heat dissipation in high-throughput memory subsystems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C33618B-250BIN and IS61WV102418BLL-250BLI, CY7C1418BV18-250BZXC uniquely delivers DDR-II timing, echo-clock–assisted data capture, and DLL-based latency optimization - critical for 250 MHz system-level timing closure without board-level skew compensation.

Availability

CY7C1418BV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and industrial real-time control buffer applications requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1418BV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, industrial, and automotive systems, emphasizing signal integrity and timing precision.

CY7C1418BV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in systems where DDR timing predictability and echo-clock–based data capture eliminate board-level routing constraints.

FAQ

What is the function of the DOFF pin on CY7C1418BV18-250BZXC?

The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled HIGH, the device operates in DDR-II mode with 1.5-cycle read latency at up to 250 MHz. When pulled LOW, it reverts to DDR-I mode with 1-cycle latency and a maximum frequency of 167 MHz, simplifying timing closure in less demanding applications.

How does the ZQ pin affect output driver impedance calibration?

The ZQ pin connects to a 240 Ω resistor to ground, enabling on-die calibration of DQ[17:0], CQ, and CQ output drivers to 48 Ω ±10%. This ensures consistent HSTL-18 signal integrity across voltage and temperature variations without external termination resistors, reducing PCB component count and layout sensitivity.

Can CY7C1418BV18-250BZXC operate with only K and K clocks, without C and C?

Yes - in single-clock-domain mode, the device uses K and K for both input sampling and output launching. Read data is driven on the rising edges of K and K instead of C and C, and CQ/CQ are generated relative to K/K. This reduces clock routing complexity but sacrifices the deskewing benefits of dedicated output clocks.

What is the purpose of BWS[1:0] pins in the 2M × 18 configuration?

BWS[1:0] are active-low byte write select signals that enable partial 9-bit writes to the 18-bit data bus: BWS0 controls DQ[8:0], BWS1 controls DQ[17:9]. When one BWS is deasserted, its corresponding 9-bit byte remains unaltered during a write, allowing efficient updates to specific fields within a 18-bit word without read-modify-write overhead.