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Infineon Technologies CY7C1418BV18-267BZXC

Part No.:
CY7C1418BV18-267BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1418BV18-267BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,671

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Product details

Overview

CY7C1418BV18 from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR-II synchronous pipelined SRAM with 267 MHz clock operation, 1.8V core supply, HSTL I/O, and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers 534 Mbps data transfer via double-data-rate interface, supports 2-word burst reads/writes, and uses echo clocks (CQ/CQ) for precise high-speed data capture in networking packet buffers and telecom line cards.

For engineers reviewing the CY7C1418BV18 datasheet, CY7C1418BV18 pinout, CY7C1418BV18 application, or CY7C1418BV18 equivalent, key selection criteria include DDR-II timing compliance, DLL-enabled 1.5-cycle read latency, HSTL-18 I/O drive strength, 2M×18 configuration matching FPGA/ASIC memory interfaces, and FBGA thermal/mechanical compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a synchronous pipelined architecture with dual input clocks (K/K) for address/data capture and dual output clocks (C/C) for data launch, enabling precise DDR timing control. The internal burst counter uses A0 as LSB to sequence two 18-bit words per access, eliminating external address sequencing logic.

It integrates a Delay Lock Loop (DLL) for accurate data placement relative to C/C edges when enabled (DOFF = HIGH), achieving 1.5-cycle read latency at 267 MHz; disabling DLL via DOFF = LOW reverts operation to DDR-I mode with 1-cycle latency and ≤167 MHz max frequency.

Key Specifications

ParameterValue and Actual Design Meaning
Density & Organization36 Mbit / 2M × 18 - matches 18-bit wide data paths in DSPs and network processors without byte-lane splitting.
Max Clock Frequency267 MHz - enables 534 Mbps effective bandwidth using DDR transfers on K/K rising edges.
Read Latency1.5 cycles (DLL enabled) - reduces pipeline stalls in real-time packet buffering applications.
I/O StandardHSTL Class I (1.8V) - ensures signal integrity and timing margin on high-speed backplanes with controlled-impedance traces.
Supply VoltagesVDD = 1.8V ±0.1V (core), VDDQ = 1.8V ±0.1V (I/O) - requires separate low-noise regulation for core and I/O domains.
Package165-ball FBGA (15 × 17 × 1.4 mm) - supports fine-pitch routing and thermal dissipation in compact telecom modules.
JTAG SupportIEEE 1149.1 compliant - enables boundary-scan testing of memory subsystems during board-level validation.

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
DQ[17:0]Synchronous bidirectional data bus18-bit DDR data path; latched on K/K rising edges for writes, driven on C/C rising edges for reads; auto-tri-stated when deselected.
K, KPositive/negative input clocksEdge-aligned differential pair capturing all synchronous inputs (address, R/W, BWS); defines access initiation timing.
C, CPositive/negative output clocksDeskew-capable clock pair launching read data; used with CQ/CQ to compensate for flight-time mismatches across multiple SRAMs.
CQ, CQOutput echo clocksFree-running clocks synchronized to C/C; simplify system-level data capture by aligning Q[17:0] edges to controller sampling points.
BWS[1:0]Byte write select (active low)Selects which 9-bit byte (D[8:0] or D[17:9]) is written during each 2-word burst; preserves unselected bytes.
A[20:0], A0Address inputs21-bit address bus; A0 drives internal burst counter for sequential 18-bit word addressing within each access.
R/WRead/write direction controlSampled synchronously with LD and K/K to determine burst operation type; HIGH = read, LOW = write.
DOFFDLL enable/disableActive-low pin; tied HIGH for DDR-II mode (1.5-cycle latency), tied LOW for DDR-I fallback (1-cycle latency, ≤167 MHz).

Key Features

FeatureDesign Value
2-word burst architectureReduces address bus toggling by 50% versus single-word SRAMs, lowering EMI and simplifying controller address generation logic.
Variable-drive HSTL outputsAdjustable output impedance via ZQ pin calibration (0.2 × RQ) ensures consistent signal integrity across varying PCB trace lengths and loads.
Expanded HSTL output voltage range1.4V–VDD operation allows robust noise margin under VDD droop conditions while maintaining HSTL-18 timing compliance.
Integrated DLL with echo clocksEliminates need for external phase alignment circuitry; CQ/CQ provide deterministic data-to-clock relationship for reliable >500 Mbps sampling.
JTAG 1149.1 test portEnables full boundary-scan visibility of all pins during production test, reducing debug time for memory subsystem faults.

Applications

Packet Buffer MemoryBaseband Processing Buffer

Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in Layer 2/3 switches before forwarding decisions.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency temporary storage for variable-length packets with burst-aligned read/write access.

Use Value: 267 MHz DDR-II operation delivers 534 Mbps throughput-sufficient for 10Gbps line-rate buffering with minimal latency penalty.

Use Scenario: Holding intermediate FFT or channel estimation results in 4G/LTE baseband units.

IC Role / Device Role / Timing Role: Synchronous pipelined buffer interfacing directly with FPGA-based DSP engines using 18-bit parallel data paths.

Use Value: 1.5-cycle DLL-enabled read latency minimizes pipeline bubbles in multi-stage signal processing pipelines.

Telecom Line Card CacheIndustrial Real-Time Controller Memory

Use Scenario: Caching protocol headers and metadata in carrier-grade optical transport equipment.

IC Role / Device Role / Timing Role: Burst-accessed SRAM providing deterministic access timing for time-critical header parsing logic.

Use Value: Echo clocks (CQ/CQ) eliminate inter-SRAM skew, enabling simultaneous capture of data from multiple CY7C1418BV18 devices on shared buses.

Use Scenario: Storing motion control trajectory tables and sensor fusion buffers in CNC or robotics controllers.

IC Role / Device Role / Timing Role: Deterministic-latency memory for hard real-time tasks requiring guaranteed sub-10ns access jitter.

Use Value: DLL-off mode (1-cycle latency at ≤167 MHz) provides predictable timing margins for safety-critical firmware execution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR-II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ISSI IS61WV102418B1M × 18, 165-ball FBGA, 200 MHz max, no DLL, 1-cycle latency onlyLimited to lower bandwidth systems; lacks echo clocks and DLL for advanced deskewChoose for cost-sensitive designs where 267 MHz and DLL features are unnecessary
Micron MT46V32M1832M × 18 DDR SDRAM, 2.5V, 200 MHz, requires refresh and initializationHigher density but asynchronous refresh overhead; not pin-compatible or functionally drop-inChoose only if system already uses DDR SDRAM controllers and can accommodate refresh management

Compared with IS61WV102418B and MT46V32M18, CY7C1418BV18 uniquely combines 267 MHz DDR-II speed, DLL-based timing precision, and echo-clock–assisted data capture-making it optimal for deterministic, high-throughput packet and signal processing buffers where latency predictability outweighs density or cost trade-offs.

Availability

CY7C1418BV18 is available at Aetrix Electronics and suitable for telecom infrastructure, networking equipment, and industrial real-time control systems requiring stable component supply, long-term lifecycle support, and verified DDR-II timing compliance.

Supply support for CY7C1418BV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

CY7C1418BV18 belongs to Cypress's DDR-II SyncBurst SRAM product line, engineered specifically for deterministic, low-latency buffering in high-speed serial data paths where traditional DRAM timing variability is unacceptable.

FAQ

What is the minimum setup/hold time requirement for R/W relative to K clock?

The R/W signal must meet a 0.4 ns setup time and 0.3 ns hold time relative to the rising edge of K, as specified in the "AC Switching Characteristics" table (page 23, Rev. *D). These values assume standard HSTL-18 loading and 1.8V VDDQ operation, and are critical for reliable burst-type read/write command decoding.

Can CY7C1418BV18 operate without connecting the ZQ pin?

No-ZQ must be connected either to a precision resistor (RQ) to ground for impedance calibration or directly to VDDQ for minimum-impedance mode. Leaving ZQ floating or tying it to GND violates the absolute maximum ratings and causes undefined output drive strength and signal integrity failure.

How does the burst counter behave during consecutive read accesses?

The internal burst counter increments linearly using A0 as its LSB; for each LD assertion, it sequences two 18-bit words from adjacent addresses. Consecutive accesses automatically advance the counter, enabling seamless streaming of 36-bit-wide data without external address increment logic.

Is the 165-ball FBGA package compatible with standard reflow profiles?

Yes-the 165-ball FBGA (15 × 17 × 1.4 mm) is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak 260°C, 60–90 sec above 217°C), provided board layout follows Cypress's recommended pad geometry and thermal relief guidelines.

CY7C1418BV18-267BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
267 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1418BV18-267BZXC FAQ

1.How can I place an order for CY7C1418BV18-267BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1418BV18-267BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1418BV18-267BZXC reliable?

The price and inventory of CY7C1418BV18-267BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1418BV18-267BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1418BV18-267BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1418BV18-267BZXC transactions.

Note: Certain payment methods may incur a processing fee.

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CY7C1418BV18-267BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1418BV18-267BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1418BV18-267BZXC?

For technical support, including CY7C1418BV18-267BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1418BV18-267BZXC requirements.

6.How does Aetrix verify that CY7C1418BV18-267BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1418BV18-267BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1418BV18-267BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1418BV18-267BZXC?

All CY7C1418BV18-267BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1418BV18-267BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1418BV18-267BZXC part is unused and in its original packaging.

Return procedure for CY7C1418BV18-267BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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