Infineon Technologies CY7C1418KV18-250BZC

Overview

CY7C1418KV18-250BZC from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR II synchronous SRAM with two-word burst architecture, 250 MHz maximum clock frequency, 1.8 V core supply, HSTL I/O, and 165-ball FBGA package. It delivers 900 MB/s peak bandwidth via double-data-rate transfers at 500 Mbps per pin and supports programmable output impedance via ZQ calibration - deployed in high-speed packet buffering for telecom line cards and network processors.

For engineers reviewing the CY7C1418KV18-250BZC datasheet, CY7C1418KV18-250BZC pinout, CY7C1418KV18-250BZC application, or CY7C1418KV18-250BZC equivalent, key selection criteria include DDR-II read latency (1.5 cycles with DOFF HIGH), echo clock timing (CQ/CQ synchronization), dual-clock domain support (K/K and C/C), and HSTL-18 I/O compatibility with 1.4–1.8 V VDDQ range.

Technical Context

The device implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K/K to enable two-word burst reads/writes. All synchronous inputs - including R/W, LD, BWS[1:0], and DQ[17:0] - are registered on K/K edges, while outputs are edge-aligned to C/C (or K/K in single-clock mode).

It integrates a PLL for precise data placement, echo clocks (CQ/CQ) referenced to C/C for simplified system-level data capture, and JTAG 1149.1 boundary-scan test access. The DOFF pin selects between DDR-II mode (1.5-cycle read latency) and DDR-I mode (1-cycle latency), enabling flexible timing integration in multi-SRAM systems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with IS61WV102418BLL-15BLI and MT46H32M18LFBF-6 IT, CY7C1418KV18-250BZC uniquely combines true SRAM random access, DDR-II bandwidth, echo-clock timing, and ZQ impedance tuning - making it irreplaceable for deterministic, high-speed packet and signal processing buffers.

Availability

CY7C1418KV18-250BZC is available at Aetrix Electronics and suitable for telecom line card design, network processor integration, high-speed test equipment development, and radar signal processing requiring stable component supply and long-term industrial availability.

Supply support for CY7C1418KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications infrastructure markets.

CY7C1418KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in telecom and networking ASIC interfaces where asynchronous DRAM latency is unacceptable.

FAQ

What is the function of the DOFF pin on CY7C1418KV18-250BZC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle read latency; when LOW, it reverts to DDR-I mode with 1-cycle latency. This setting directly affects timing closure in the memory controller and must be held static during operation - it is sampled synchronously on the K clock edge during initialization.

Can CY7C1418KV18-250BZC operate with only K and K clocks, without C and C?

Yes - the device supports single-clock mode where C and C are tied to K and K respectively. In this configuration, data outputs are timed to K/K edges instead of C/C, and echo clocks CQ/CQ are generated relative to K/K. However, system-level timing margin decreases due to loss of independent output clock deskewing capability.

How does ZQ calibration work, and what resistor value is recommended?

ZQ calibration uses an external resistor (RQ) between ZQ and GND to set output driver impedance to 0.2 × RQ. For standard 50 Ω transmission lines, a 240 Ω resistor yields 48 Ω driver impedance. The calibration occurs automatically at power-up and can be retriggered via JTAG instruction; ZQ must never be left floating or tied to GND.

Is CY7C1418KV18-250BZC pin-compatible with other devices in the CY7C14xxKV18 family?

No - CY7C1418KV18-250BZC (2M × 18) and CY7C1420KV18 (1M × 36) share the same 165-ball FBGA footprint but differ in pin mapping: BWS[3:0], DQ[35:0], and address count (A[20:0] vs. A[19:0]) are not interchangeable. Direct replacement requires layout revision and firmware adaptation.