Infineon Technologies CY7C1418KV18-250BZCT

Overview

CY7C1418KV18-250BZCT from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR II synchronous SRAM with two-word burst architecture, 1.8 V core supply, HSTL I/O, and 250 MHz maximum clock frequency (400 Mbps data rate). It uses dual input clocks (K/K) for precise DDR timing, echo clocks (CQ/CQ) for simplified high-speed data capture, and supports programmable output impedance via ZQ pin. Used in network packet buffers and telecom line cards requiring low-latency, burst-mode memory access.

For engineers reviewing the CY7C1418KV18-250BZCT datasheet, CY7C1418KV18-250BZCT pinout, CY7C1418KV18-250BZCT application, or CY7C1418KV18-250BZCT equivalent, key selection criteria include DDR-II read latency (1.5 cycles with DOFF HIGH), 165-ball FBGA package compatibility, HSTL-18 I/O voltage range (1.4 V to 1.8 V), and JTAG 1149.1 test access support.

Technical Context

This SRAM implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K and K. Read data is registered and driven on rising edges of C and C (or K and K in single-clock mode), synchronized to echo clocks CQ/CQ for deterministic capture at the controller.

The device integrates a PLL for accurate data placement, supports variable-drive HSTL outputs, and enables byte-selectable writes via BWS[1:0] with self-timed internal write circuitry. DOFF pin configures read latency: 1.5-cycle DDR-II mode (DOFF = HIGH) or 1-cycle DDR-I mode (DOFF = LOW).

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with AS7C33618A-250BIN and IS45S32800J-25BLI, CY7C1418KV18-250BZCT delivers deterministic burst latency, echo-clock–assisted data capture, and on-die impedance tuning - essential for high-reliability, high-speed embedded buffering where SDRAM unpredictability or DDR-I bandwidth limits are unacceptable.

Availability

CY7C1418KV18-250BZCT is available at Aetrix Electronics and suitable for network packet buffers, telecom line cards, industrial PLC data caches, and radar signal processing buffers requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1418KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications markets, with emphasis on reliability and signal integrity.

CY7C1418KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for deterministic, low-latency burst buffering in high-speed networking and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1418KV18-250BZCT?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle read latency; when LOW, it reverts to DDR-I mode with 1-cycle latency. This setting directly affects controller timing budget and pipeline depth but does not alter burst length, clocking, or data width.

Can CY7C1418KV18-250BZCT operate without external C and C clocks?

Yes - the device supports single-clock mode where K and K serve as both input and output clocks. In this configuration, read data is driven on K/K edges instead of C/C, and CQ/CQ are generated relative to K. However, deskew capability and maximum timing margin are reduced compared to dual-clock operation.

How is output impedance calibrated using the ZQ pin?

ZQ connects to a 240 Ω resistor to ground, enabling on-die calibration of DQ and CQ output drivers to match 60 Ω transmission lines (0.2 × RQ). This eliminates discrete termination and improves signal integrity. Connecting ZQ to VDDQ enables minimum impedance mode; leaving it unconnected or tied to GND is prohibited.

Is CY7C1418KV18-250BZCT pin-compatible with CY7C1418KV18-333BZCT?

Yes - both share identical 165-ball FBGA package and pinout. The suffix denotes speed grade: -250BZCT supports up to 250 MHz clock (400 Mbps), while -333BZCT supports 333 MHz (666 Mbps). Electrical characteristics (VDD, VDDQ, timing parameters) differ, so controller timing must be validated per speed grade.