Infineon Technologies CY7C1418KV18-250BZI

Overview

CY7C1418KV18-250BZI from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR II synchronous SRAM with two-word burst architecture, 1.8 V core supply, HSTL I/O, and 250 MHz maximum clock frequency (400 Mbps data rate). It uses dual K/K input clocks for address/data capture and dual C/C output clocks with echo clocks CQ/CQ to minimize skew in high-speed memory subsystems. Designed for network packet buffering and telecom line-card data path storage.

For engineers reviewing the CY7C1418KV18-250BZI datasheet, CY7C1418KV18-250BZI pinout, CY7C1418KV18-250BZI application, or CY7C1418KV18-250BZI equivalent, key selection criteria include DDR-II burst timing, 1.5-cycle read latency (DOFF = HIGH), 165-ball FBGA package compatibility, HSTL-18 I/O voltage flexibility (1.4–1.8 V), and JTAG 1149.1 test access support.

Technical Context

This SRAM implements a synchronous pipelined architecture with internal burst counter driven by A0, delivering two consecutive 18-bit words per access. Read latency is configurable: 1 cycle in DDR-I mode (DOFF = LOW) or 1.5 cycles in DDR-II mode (DOFF = HIGH), both synchronized to rising edges of K/K clocks.

All synchronous inputs (A[20:0], R/W, LD, BWS[1:0], DQ[17:0]) are registered on K/K rising edges; outputs (DQ[17:0], CQ, CQ) are edge-aligned to C/C rising edges. The integrated PLL ensures precise data placement, while ZQ pin enables dynamic output impedance calibration against system bus termination.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with AS7C336200B-250BIN and IS45S32800J-25BLI, CY7C1418KV18-250BZI uniquely combines HSTL-18 with ZQ calibration, echo clocks, and selectable DDR-I/II latency-critical for timing-critical telecom and networking designs requiring signal integrity and debug visibility.

Availability

CY7C1418KV18-250BZI is available at Aetrix Electronics and suitable for packet buffering in switch ASICs, line-card data path storage, and baseband processing memory requiring stable component supply, long-term lifecycle assurance, and industrial temperature grade (-40°C to +85°C).

Supply support for CY7C1418KV18-250BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1418KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for high-throughput, low-latency data buffering in networking equipment and telecom infrastructure where deterministic timing and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CY7C1418KV18-250BZI?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle read latency; when LOW, it reverts to DDR-I mode with 1-cycle latency. This allows system designers to trade off latency versus bandwidth efficiency based on controller pipeline constraints and timing margin requirements.

Can CY7C1418KV18-250BZI operate with only the K clock (single-clock mode)?

Yes. When C and C are unconnected, the device defaults to single-clock mode using K and K to drive both input sampling and output data. In this mode, CQ and CQ are generated relative to K/K, preserving source-synchronous timing-but without the flight-time deskewing benefit of independent C/C clocks.

How does ZQ pin calibration affect signal integrity?

ZQ connects to an external 240 Ω resistor to ground, enabling on-die calibration of DQ, CQ, and CQ output driver impedance to ~48 Ω (0.2 × 240 Ω). This matches typical PCB trace impedance, minimizing reflections and improving eye diagram margins-especially critical at 250 MHz DDR-II data rates.

Is CY7C1418KV18-250BZI pin-compatible with CY7C1418KV18-300BZI?

Yes. Both share identical 165-ball FBGA package (BZI suffix), pinout, and functional interface. The only difference is maximum rated clock frequency: 250 MHz vs. 300 MHz. Designs targeting ≤250 MHz can use either, but 300 MHz operation requires the -300 variant due to internal timing characterization limits.