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Infineon Technologies CY7C1418KV18-250BZXC

Part No.:
CY7C1418KV18-250BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1418KV18-250BZXC.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,771

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Product details

Overview

CY7C1418KV18-250BZXC from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR II synchronous SRAM with two-word burst architecture, 1.8 V core supply, HSTL I/O, and 250 MHz maximum clock frequency (400 Mbps data rate). It uses dual input clocks (K/K) and echo clocks (CQ/CQ) for precise DDR timing and supports programmable output impedance via ZQ pin. It is deployed in high-bandwidth packet buffering for telecom line cards and network switches.

For engineers reviewing the CY7C1418KV18-250BZXC datasheet, CY7C1418KV18-250BZXC pinout, CY7C1418KV18-250BZXC application, or CY7C1418KV18-250BZXC equivalent, key selection criteria include 250 MHz DDR clock support, 1.5-cycle read latency (DOFF = HIGH), 165-ball FBGA package compatibility, HSTL-18 I/O voltage range (1.4–1.8 V), and JTAG 1149.1 test access capability.

Technical Context

The device implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K/K to enable two-word burst reads/writes. All synchronous inputs-including R/W, LD, BWS[1:0], and DQ[17:0]-are registered on K/K edges, while outputs are edge-aligned to C/C or K/K in single-clock mode.

It integrates a PLL for accurate data placement, echo clocks (CQ/CQ) synchronized to C/C for simplified high-speed data capture, and ZQ-controlled output impedance tuning (0.2 × RQ). DOFF pin selects between DDR-II mode (1.5-cycle latency) and DDR-I mode (1-cycle latency), enabling system-level timing flexibility without changing clock topology.

Key Specifications

Parameter Value and Actual Design Meaning
Density 36 Mbit (2M × 18), enabling compact high-throughput buffer storage without depth expansion
Max Clock Frequency 250 MHz (K/K), supporting 500 MT/s effective throughput with DDR interface
Read Latency 1.5 cycles when DOFF = HIGH; 1 cycle when DOFF = LOW - selectable per system timing budget
I/O Voltage HSTL Class I (1.4–1.8 V), compatible with both 1.5 V and 1.8 V IO supplies
Package 165-ball FBGA (13 × 15 × 1.4 mm), RoHS-compliant, with 0.8 mm ball pitch
Core Supply 1.8 V ± 0.1 V, requiring low-noise regulation for stable DDR timing margins
JTAG Support IEEE 1149.1 compliant TAP controller for boundary scan testing and debug visibility

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free (BZXC suffix).

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus Shares pins for read/write; sampled on K/K rising edges during write, driven on C/C rising edges during read
K / K Dual-phase input clock pair Controls all synchronous inputs; enables DDR address latching on alternating edges to halve address bus toggling
C / C Output data clock pair Drives read data; used with CQ/CQ to deskew flight time across multi-device memory subsystems
CQ / CQ Output echo clocks Free-running, phase-matched to C/C; simplifies FPGA/ASIC data capture without per-pin delay calibration
DOFF DDR operation mode select Configures 1.5-cycle (HIGH) or 1-cycle (LOW) read latency - critical for meeting tAC timing in high-speed designs
ZQ Output impedance calibration reference Connects to external resistor to ground; sets DQ/CQ driver impedance to 0.2 × RQ for signal integrity optimization
LD Load strobe Active-Low synchronous enable for address and R/W registration; defines start of each burst transaction
BWS0 / BWS1 Byte write select (active LOW) BWS0 controls DQ[8:0], BWS1 controls DQ[17:9]; enables partial-word writes without read-modify-write overhead

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling frequency by 50% versus single-word SRAMs, lowering EMI and routing complexity
Programmable output drive strength ZQ-calibrated HSTL drivers adapt to PCB trace impedance, minimizing reflections and improving eye margin
Configurable read latency (1 or 1.5 cycles) DOFF pin allows runtime latency selection to match controller capabilities or timing closure requirements
Dual clock domains (K/K + C/C) Enables independent skew management between command/address and data paths for robust multi-drop layouts
JTAG 1149.1 test access port Supports production boundary scan testing and in-system debug without additional probe points

Applications

Telecom Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packets in 10G/25G Ethernet line cards where deterministic latency and burst throughput are critical.

IC Role / Device Role / Timing Role: DDR II SRAM acting as first-level packet buffer with 250 MHz clock domain, synchronized to MAC-layer timing.

Use Value: Two-word burst reduces address bus activity by half, easing layout constraints on dense backplane PCBs while maintaining 900 MB/s sustained bandwidth.

Use Scenario: Capturing high-speed digital waveforms in automated test equipment (ATE) with sub-nanosecond sampling resolution.

IC Role / Device Role / Timing Role: Synchronous burst memory interfacing directly to FPGA-based pattern generators, using CQ/CQ for jitter-tolerant data capture.

Use Value: Echo clocks eliminate need for dynamic delay adjustment per data line, reducing FPGA logic usage and improving repeatability across temperature.

Industrial PLC Data Logging Avionics Sensor Fusion Buffer

Use Scenario: Temporarily storing sensor telemetry and control logs in ruggedized industrial controllers operating under wide temperature ranges.

IC Role / Device Role / Timing Role: Low-latency SRAM providing deterministic write response for time-critical logging events, powered from 1.8 V rail.

Use Value: DOFF-selectable latency allows matching to legacy controller timing without redesign; HSTL I/O ensures noise immunity in electrically noisy factory environments.

Use Scenario: Aggregating time-synchronized IMU, GPS, and radar data streams in real-time avionics processing units.

IC Role / Device Role / Timing Role: Burst-capable memory serving as coherent data staging area between heterogeneous sensor interfaces and DSP cores.

Use Value: JTAG support enables in-flight diagnostics and field-upgradable configuration; 165-ball FBGA meets strict board area and thermal dissipation requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS45S16160F-25BLI 16-Mbit (1M × 16), 250 MHz, SSTL-18 I/O, no echo clocks or ZQ calibration Lacks CQ/CQ and impedance tuning; requires external termination and tighter layout control Choose when lower density suffices and cost sensitivity outweighs signal integrity advantages
MT47H64M16HR-25E:H 1-Gbit DDR2 SDRAM, 250 MHz, 1.8 V, but asynchronous initialization and refresh overhead Requires periodic refresh, lacks deterministic latency; not suitable for zero-refresh real-time buffers Prefer only if system already uses DDR2 SDRAM infrastructure and can tolerate refresh-induced latency jitter

Compared with IS45S16160F-25BLI and MT47H64M16HR-25E:H, CY7C1418KV18-250BZXC delivers guaranteed latency, built-in deskew clocks, and on-die impedance control - making it uniquely suited for deterministic, high-reliability burst-buffer applications where timing predictability is non-negotiable.

Availability

CY7C1418KV18-250BZXC is available at Aetrix Electronics and suitable for telecom infrastructure, automated test equipment, industrial control systems, and avionics data acquisition requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1418KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1418KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in systems where DDR SDRAM unpredictability or asynchronous SRAM bandwidth limitations are unacceptable.

FAQ

What is the function of the DOFF pin on CY7C1418KV18-250BZXC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, the device operates in DDR-II mode with 1.5-cycle read latency; when LOW, it reverts to DDR-I mode with 1-cycle latency. This selection directly affects tAC timing and must be set before initialization. The pin is sampled synchronously on the rising edge of K, and its state remains latched until power-on reset or hardware reset.

Can CY7C1418KV18-250BZXC operate without external C and C clocks?

Yes - the device supports single-clock mode where K and K serve as both command and output clocks. In this configuration, read data is driven on the rising edges of K and K instead of C and C, and CQ/CQ are generated relative to K. However, echo clock functionality and optimal deskew performance require dedicated C/C inputs, so single-clock mode trades timing margin for reduced clock routing complexity.

How is output impedance calibrated using the ZQ pin?

ZQ connects to an external precision resistor (RQ) tied to ground; the device measures RQ and calibrates all DQ and CQ output drivers to 0.2 × RQ. Typical RQ values are 240 Ω (yielding ~48 Ω drive), but values from 120 Ω to 330 Ω are supported. Connecting ZQ directly to VDDQ enables minimum-impedance mode (~30 Ω); floating or grounding ZQ is prohibited and may cause undefined behavior or damage.

Is CY7C1418KV18-250BZXC pin-compatible with other devices in the CY7C14xxKV18 family?

No - CY7C1418KV18-250BZXC (2M × 18) has different pin assignments than CY7C1420KV18 (1M × 36), particularly in BWS and DQ pin counts and locations. While both use the same 165-ball FBGA footprint, the signal mapping differs: BWS0/BWS1 vs. BWS0–BWS3, and DQ[17:0] vs. DQ[35:0]. Board-level replacement requires schematic and layout revision, not just BOM update.

CY7C1418KV18-250BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1418KV18-250BZXC FAQ

1.How can I place an order for CY7C1418KV18-250BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1418KV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1418KV18-250BZXC reliable?

The price and inventory of CY7C1418KV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1418KV18-250BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1418KV18-250BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1418KV18-250BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1418KV18-250BZXC?

CY7C1418KV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1418KV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1418KV18-250BZXC?

For technical support, including CY7C1418KV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1418KV18-250BZXC requirements.

6.How does Aetrix verify that CY7C1418KV18-250BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1418KV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1418KV18-250BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1418KV18-250BZXC?

All CY7C1418KV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1418KV18-250BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1418KV18-250BZXC part is unused and in its original packaging.

Return procedure for CY7C1418KV18-250BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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