Infineon Technologies CY7C1418KV18-250BZXI

Overview

CY7C1418KV18-250BZXI from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR II synchronous SRAM with two-word burst architecture, 250 MHz maximum clock frequency, 1.8 V core supply, HSTL I/O, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers 900 MB/s peak bandwidth via double-data-rate transfers at 500 Mbps per pin and supports programmable output drive strength and on-die impedance matching via ZQ calibration - deployed in high-speed packet buffering for telecom line cards.

For engineers reviewing the CY7C1418KV18-250BZXI datasheet, CY7C1418KV18-250BZXI pinout, CY7C1418KV18-250BZXI application, or CY7C1418KV18-250BZXI equivalent, key selection criteria include DDR-II read latency (1.5 cycles with DOFF HIGH), echo clock timing (CQ/CQ synchronized to C/C), dual-clock domain support (K/K for inputs, C/C for outputs), and JTAG 1149.1 test access compliance.

Technical Context

This SRAM implements a pipelined synchronous architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K and K clocks. Write data is registered on both K and K edges, while read data is edge-aligned to C and C (or K and K in single-clock mode), enabling precise DDR timing control.

The device integrates a PLL for accurate data placement, echo clocks (CQ/CQ) referenced to C/C for simplified high-speed data capture, and synchronous self-timed write circuitry. It supports variable-drive HSTL outputs (1.4 V to VDDQ) and operates across 1.8 V core and 1.5/1.8 V I/O supply ranges, with ZQ pin enabling dynamic output impedance tuning to system bus resistance.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free construction (BZXI suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with AS7C362000B-250BIN and IS45S32800J-25BLI, CY7C1418KV18-250BZXI uniquely combines HSTL I/O, ZQ calibration, echo clocks, and selectable DDR latency - making it optimal for timing-critical, high-density telecom and networking designs where signal integrity and controller timing margin are paramount.

Availability

CY7C1418KV18-250BZXI is available at Aetrix Electronics and suitable for telecom infrastructure, network processor acceleration, and industrial video processing requiring stable component supply, long-term lifecycle assurance, and Pb-free manufacturing compliance.

Supply support for CY7C1418KV18-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial markets.

CY7C1418KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in packet-switched networks and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1418KV18-250BZXI?

The DOFF (DDR Off) pin selects read latency mode: when asserted HIGH, the device operates in DDR-II mode with 1.5-cycle read latency; when LOW, it behaves as a DDR-I device with 1-cycle latency. This setting directly controls internal pipeline staging and must be held stable during operation - it is sampled synchronously on the rising edge of K.

Can CY7C1418KV18-250BZXI operate with only K and K clocks, without C and C?

Yes. In single-clock mode, the device uses K and K for both input sampling and output data timing - eliminating need for separate C/C clocks. Read data is then driven on rising edges of K/K, and CQ/CQ are generated relative to K/K. However, this sacrifices deskew capability and reduces maximum achievable system timing margin compared to dual-clock operation.

How does ZQ calibration work, and what external component is required?

ZQ calibration adjusts output driver impedance to match the system data bus. A 240 Ω resistor must be connected between the ZQ pin and ground. The device measures this reference and configures its DQ and CQ output drivers to 48 Ω (0.2 × 240 Ω). Direct connection to VDDQ enables minimum-impedance mode; floating or grounding ZQ is prohibited and may cause functional failure.

Is CY7C1418KV18-250BZXI pin-compatible with other devices in the CY7C14xxKV18 family?

No. CY7C1418KV18-250BZXI (2M × 18) and CY7C1420KV18 (1M × 36) share the same 165-ball FBGA package but differ in pin mapping - particularly for DQ, BWS, and address signals. For example, CY7C1418KV18 uses BWS[1:0] and DQ[17:0], while CY7C1420KV18 uses BWS[3:0] and DQ[35:0]. Interchangeability requires full PCB redesign.