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Infineon Technologies CY7C1418KV18-300BZXC

Part No.:
CY7C1418KV18-300BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1418KV18-300BZXC.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,989

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Product details

Overview

CY7C1418KV18-300BZXC from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR II synchronous SRAM with two-word burst architecture, 333 MHz clock operation, 1.8 V core supply, HSTL I/O, and 165-ball FBGA package. It delivers 666 MT/s data transfer via double data rate interface and supports configurable read latency (1 or 1.5 cycles) via DOFF pin for high-bandwidth buffering in network packet processors.

For engineers reviewing the CY7C1418KV18-300BZXC datasheet, CY7C1418KV18-300BZXC pinout, CY7C1418KV18-300BZXC application, or CY7C1418KV18-300BZXC equivalent, key selection criteria include DDR-II timing compliance, echo clock (CQ/CQ) synchronization capability, burst-addressed 18-bit wide data path, and JTAG 1149.1 test port integration for system-level validation.

Technical Context

This SRAM implements a synchronous pipelined architecture with dual input clocks (K/K) for address/control latching and dual output clocks (C/C) for data strobing. Internal burst counter uses A0 to generate sequential 18-bit word addresses, enabling two-word bursts per access without external address incrementing.

It integrates a PLL for precise data placement, echo clocks (CQ/CQ) aligned to C/C for simplified high-speed data capture, and programmable output impedance via ZQ pin. Read latency is selectable between 1 cycle (DOFF = LOW) and 1.5 cycles (DOFF = HIGH), matching DDR-I or DDR-II timing models respectively.

Key Specifications

Parameter Value and Actual Design Meaning
Density 36 Mbit (2M × 18 organization), enabling compact high-bandwidth buffer memory for packet forwarding engines
Max Clock Frequency 333 MHz - defines maximum sustained transaction rate of 333 million burst operations per second
Data Rate 666 MT/s - achieved via DDR interface transferring data on both rising edges of K/K and C/C clocks
Read Latency Selectable 1-cycle (DDR-I mode) or 1.5-cycle (DDR-II mode) - directly impacts pipeline depth and controller timing margin
Supply Voltage 1.8 V core (VDD), 1.4–1.8 V I/O (VDDQ) - supports mixed-voltage system integration with HSTL-compatible interfaces
Package 165-ball FBGA (13 × 15 × 1.4 mm) - provides 18-bit bidirectional DQ[17:0], dual echo clocks (CQ/CQ), and JTAG TAP signals
Operating Current 460 mA at 300 MHz - determines thermal design and power delivery requirements for sustained burst traffic

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 1.0 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Bi-directional synchronous data bus 18-bit wide DDR data path; inputs sampled on K/K rising edges, outputs driven on C/C rising edges with echo-clock alignment
K / K Positive/negative input clocks Used for latching all synchronous inputs (address, R/W, LD, BWS); K rising edge initiates all transactions
C / C Positive/negative output data clocks Strobe read data onto DQ[17:0]; paired with CQ/CQ to deskew flight time across multi-device memory subsystems
CQ / CQ Output echo clocks Free-running clocks synchronized to C/C; enable source-synchronous data capture without per-pin delay calibration
DOFF Read latency configuration input Assert HIGH → 1.5-cycle latency (DDR-II); assert LOW → 1-cycle latency (DDR-I); sets fundamental timing model
ZQ Output impedance calibration reference Connects to external resistor to ground to tune DQ/CQ/CQ output drive strength to match 50 Ω PCB trace impedance

Key Features

Feature Design Value
Two-word burst architecture Reduces external address bus toggling by 50% per transaction, lowering EMI and simplifying controller address generation logic
Programmable read latency (1 or 1.5 cycles) Enables seamless migration between DDR-I and DDR-II timing models without hardware change-controlled solely by DOFF pin state
Integrated echo clocks (CQ/CQ) Eliminates need for per-SRAM trace length matching; allows single-point data capture at controller using CQ as strobe
JTAG 1149.1 test access port Supports boundary scan testing of interconnects in dense memory modules and enables in-system programming of configuration registers
Variable-drive HSTL outputs Adjustable output strength via ZQ calibration ensures signal integrity across varying load conditions and PCB stack-ups

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet switch ASICs.

IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM acting as first-level packet buffer with deterministic 1.5-cycle read response.

Use Value: Two-word burst reduces controller address bus activity by half, enabling tighter timing closure in multi-port line card designs.

Use Scenario: Buffering voice-over-IP (VoIP) payload streams in carrier-grade DSLAM and OLT line cards.

IC Role / Device Role / Timing Role: Synchronous burst SRAM providing jitter-free data staging between PHY and DSP subsystems.

Use Value: Echo clocks (CQ/CQ) eliminate per-device skew compensation, simplifying timing convergence across 8+ parallel memory channels.

High-Speed Test Equipment Memory Industrial Real-Time Controller Cache

Use Scenario: Capturing high-resolution waveform samples in automated test equipment (ATE) digitizers running at >300 MS/s.

IC Role / Device Role / Timing Role: DDR-II SRAM serving as deep acquisition buffer with precise clock-aligned write capture.

Use Value: 333 MHz clock + 666 MT/s data rate supports sustained streaming into memory without gaps or FIFO overflow.

Use Scenario: Staging sensor fusion data in deterministic real-time PLC controllers requiring sub-microsecond memory access.

IC Role / Device Role / Timing Role: Low-latency SRAM used for time-critical control loop variables with guaranteed 1-cycle read latency (DOFF = LOW).

Use Value: Configurable latency allows optimization for either bandwidth (1.5-cycle) or determinism (1-cycle), matching application SLA requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C33618B-333BIN 36-Mbit DDR II SRAM, 333 MHz, but uses SSTL-18 I/O instead of HSTL; no echo clocks (CQ/CQ); no ZQ calibration Lacks echo clock support and impedance tuning - requires manual trace-length matching and fixed drive strength Prefer when system already uses SSTL-18 infrastructure and board layout allows per-pin skew management
IS45S32800J-333BLI 32-Mbit DDR2 SDRAM (not SRAM), 333 MHz, 16-bit bus, requires refresh and command decoding; no burst counter or DOFF latency control Higher density per pin but introduces DRAM complexity: refresh overhead, initialization sequence, and variable latency Choose only if cost-per-bit is primary constraint and controller can manage DRAM protocol overhead

Compared with AS7C33618B-333BIN and IS45S32800J-333BLI, CY7C1418KV18-300BZXC uniquely combines true SRAM simplicity (no refresh), echo-clock–assisted timing closure, and software-selectable latency-making it optimal for deterministic, high-speed embedded buffering where timing predictability outweighs raw density.

Availability

CY7C1418KV18-300BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and industrial real-time controller cache requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1418KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1418KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in networking and telecom infrastructure where predictable timing and signal integrity are critical.

FAQ

What is the function of the DOFF pin?

The DOFF pin configures read latency: when asserted HIGH, it enables DDR-II mode with 1.5-cycle latency for higher bandwidth efficiency; when LOW, it selects DDR-I mode with 1-cycle latency for minimal access delay. This setting directly affects controller timing budget and must be held stable during operation.

How do CQ and CQ clocks improve system timing?

CQ and CQ are echo clocks synchronized to C and C, respectively, and routed alongside DQ[17:0] to the memory controller. They allow source-synchronous data capture-eliminating the need to match individual DQ trace lengths-and reduce setup/hold timing uncertainty by up to 200 ps in multi-device configurations.

Can CY7C1418KV18-300BZXC operate with only K and K clocks?

Yes. In single-clock mode, C and C are unused; read data is driven on the rising edges of K and K instead. However, this forfeits echo-clock benefits and increases timing margin requirements due to lack of dedicated output strobes and increased clock-to-Q skew.

What is the role of the ZQ pin in system design?

ZQ connects to an external precision resistor (typically 240 Ω) to ground, enabling on-die calibration of DQ, CQ, and CQ output driver impedance. This ensures consistent 50 Ω termination across voltage/temperature variations, reducing signal reflections and improving eye diagram margins on high-speed buses.

CY7C1418KV18-300BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1418KV18-300BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1418KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1418KV18-300BZXC reliable?

The price and inventory of CY7C1418KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1418KV18-300BZXC is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1418KV18-300BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1418KV18-300BZXC?

CY7C1418KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1418KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1418KV18-300BZXC?

For technical support, including CY7C1418KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1418KV18-300BZXC requirements.

6.How does Aetrix verify that CY7C1418KV18-300BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1418KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1418KV18-300BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1418KV18-300BZXC?

All CY7C1418KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1418KV18-300BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1418KV18-300BZXC part is unused and in its original packaging.

Return procedure for CY7C1418KV18-300BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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