Infineon Technologies CY7C1420BV18-200BZCT

Overview

CY7C1420BV18 from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous pipelined DDR-II SRAM with 1.8V core supply, HSTL I/O, and 2-word burst architecture. It operates at up to 200 MHz clock frequency (400 MT/s effective data rate), supports DLL-enabled 1.5-cycle read latency, and uses dual input clocks (K/K) and dual output clocks (C/C) for precise timing control in high-speed memory subsystems used in network packet buffers and baseband processing.

For engineers reviewing the CY7C1420BV18 datasheet, CY7C1420BV18 pinout, CY7C1420BV18 application, or CY7C1420BV18 equivalent, key selection criteria include its 1M × 36 organization, 165-ball FBGA package, echo clock support (CQ/CQ), variable-drive HSTL outputs, and DLL-on/off mode flexibility for DDR-I/DDR-II interoperability.

Technical Context

This device implements a synchronous pipelined architecture where address and control signals are registered on rising edges of complementary K/K clocks, and data is transferred on both edges of C/C (DDR) or K/K (single-clock mode). Burst counter logic uses A0 as LSB input to sequence two 36-bit words per access.

It integrates a Delay Lock Loop (DLL) for accurate data placement relative to echo clocks CQ/CQ, enabling system-level deskew across multiple devices. Output impedance is tunable via ZQ pin using external resistor to ground, supporting 0.2×RQ matching to system bus impedance.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IS61WV102436BLL-15BLI and MT48LC32M16A2P-6A:G, CY7C1420BV18 provides deterministic DDR-II timing, echo clock support for source-synchronous capture, and programmable DLL mode-critical for systems demanding sub-5ns read-to-data-valid timing consistency across temperature and voltage.

Availability

CY7C1420BV18 is available at Aetrix Electronics and suitable for network infrastructure, wireless baseband, high-speed test instrumentation, and industrial imaging applications requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1420BV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications markets, emphasizing signal integrity and timing precision.

CY7C1420BV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for applications needing deterministic low-latency memory access with source-synchronous timing control in FPGA- and ASIC-based systems.

FAQ

What is the minimum supported clock frequency for CY7C1420BV18?

The device has no specified minimum clock frequency; it supports DC operation in DLL-off mode. In DLL-on mode, stable operation requires ≥100 MHz to maintain DLL lock. For guaranteed timing compliance, refer to the "DC Electrical Characteristics" and "Switching Characteristics" tables in Document Number 001-07033 Rev. *D, pages 18–24.

Can CY7C1420BV18 operate with only K clock (no K) in single-clock mode?

Yes - when K is tied to VDDQ and K is used as the sole input clock, the device operates in single-clock mode. In this configuration, read data is driven on rising edges of K/K, and C/C must be driven externally or tied off; CQ/CQ remain functional but derive from K instead of C/C.

How does ZQ calibration affect signal integrity in a multi-SRAM system?

ZQ calibration sets output driver impedance to 0.2×RQ, matching typical 50Ω transmission lines when RQ = 250Ω. This reduces reflections and improves eye diagram margins across all 36 DQ lines, especially critical in systems with >4 SRAMs sharing the same bus due to cumulative stub effects.

Is JTAG boundary-scan supported while the device is actively performing memory operations?

Yes - the IEEE 1149.1 TAP controller operates independently of memory access cycles. Boundary-scan instructions (SAMPLE/PRELOAD, EXTEST, INTEST) can be executed during idle periods or even mid-burst, provided TMS/TCK sequencing complies with JTAG state machine timing requirements in section 5.2 of the datasheet.