Infineon Technologies CY7C1420JV18-300BZC

Overview

CY7C1420JV18 from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous pipelined DDR-II SRAM with 300 MHz clock operation, 600 Mbps double-data-rate interface, 1.8V core supply, and HSTL I/O compatible with 1.4V–1.8V output swing. It implements 2-word burst architecture with echo clocks (CQ/CQ) and DLL-enabled 1.5-cycle read latency for high-speed networking buffers and packet memory in telecom line cards.

For engineers reviewing the CY7C1420JV18 datasheet, CY7C1420JV18 pinout, CY7C1420JV18 application, or CY7C1420JV18 equivalent, key selection criteria include DDR-II timing compliance, 165-ball FBGA (15 × 17 mm) mechanical fit, 36-bit data bus width, DLL-on/off mode behavior, and HSTL-18 I/O drive strength matching system termination schemes.

Technical Context

This SRAM uses dual-clock DDR-II architecture: K/K clocks latch addresses and write data on rising edges, while C/C clocks drive read data with matched echo clocks CQ/CQ to eliminate board-level skew. Internal burst counter uses A0 as LSB input to sequence two 36-bit words per access.

The device supports both DLL-enabled (1.5-cycle read latency, 300 MHz max) and DLL-disabled (1-cycle latency, ≤167 MHz DDR-I timing) modes via DOFF pin control. All I/O-including DQ[35:0], BWS[3:0], and R/W-are registered synchronously to K/K, ensuring deterministic setup/hold margins in high-speed designs.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Compared with IS61WV102436BLL-15BLI and MT48LC32M16A2P-75:C, CY7C1420JV18 delivers 80% higher effective bandwidth, deterministic 1.5-cycle latency, and built-in echo-clock deskew-critical for jitter-sensitive telecom and packet-processing systems where timing predictability outweighs raw density.

Availability

CY7C1420JV18 is available at Aetrix Electronics and suitable for telecom infrastructure, high-speed packet switching, and industrial real-time control applications requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1420JV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for deterministic, low-jitter, high-throughput memory interfacing in telecom and networking equipment where timing precision and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CY7C1420JV18?

The DOFF pin is an active-LOW DLL disable control. When pulled HIGH, the internal Delay Lock Loop operates, enabling DDR-II timing with 1.5-cycle read latency at up to 300 MHz. When pulled LOW, the DLL is disabled and the device reverts to DDR-I timing with 1-cycle latency and a maximum frequency of 167 MHz. This provides runtime flexibility between performance and power/EMI trade-offs.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external resistor (typically 240 Ω) to ground to calibrate the output driver impedance of DQ[35:0] and CQ/CQ pins to 0.2 × RQ (e.g., 48 Ω). This ensures consistent HSTL signal integrity across voltage and temperature variations. Leaving ZQ unconnected or tying it to GND violates specification and causes undefined output drive behavior.

Can CY7C1420JV18 operate with only K/K clocks, without C/C?

Yes. In single-clock-domain mode, the device uses K/K for both input capture and output data timing. Read data is driven on the rising edges of K/K instead of C/C, and CQ/CQ are generated relative to K/K. This simplifies board layout but reduces timing margin compared to dual-clock operation with dedicated C/C and echo clocks.

What is the purpose of BWS[3:0] signals in CY7C1420JV18?

BWS[3:0] are active-LOW byte write select signals controlling four independent 9-bit byte lanes within the 36-bit data bus. During a write, only bytes with asserted (LOW) BWS lines are updated; deselected bytes retain their prior values. This eliminates the need for read-modify-write cycles when updating sub-word fields like packet headers or control registers.