Infineon Technologies CY7C1420KV18-250BZCT

Overview

CY7C1420KV18-250BZCT from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous DDR II SRAM with two-word burst architecture, 250 MHz maximum clock frequency, 1.8 V core supply, HSTL I/O, and echo clocks (CQ/CQ) for precise data capture in high-speed memory subsystems-used in network packet buffers and FPGA co-processor caches.

For engineers reviewing the CY7C1420KV18-250BZCT datasheet, CY7C1420KV18-250BZCT pinout, CY7C1420KV18-250BZCT application, or CY7C1420KV18-250BZCT equivalent, key selection factors include its 1.5-cycle read latency (DOFF = HIGH), dual-clock DDR timing (K/K and C/C), 36-bit wide data bus, and 165-ball FBGA package compatibility with high-density PCB layouts.

Technical Context

The CY7C1420KV18 implements a synchronous pipelined architecture with internal burst counter driven by A0, delivering two sequential 36-bit words per access. All address, control, and write data inputs are registered on rising edges of K and K clocks, enabling deterministic setup/hold timing at 250 MHz.

Read data is edge-aligned to C and C output clocks (or K/K in single-clock mode), with echo clocks CQ/CQ phase-matched to C/C to eliminate board-level skew. The device integrates a PLL for accurate data placement and supports programmable output impedance via ZQ calibration against external 240 Ω resistor.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm footprint, 0.8 mm ball pitch, 1.4 mm height, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IS61WV102436BLL-15BLI and MT45W8MW16BGX-25, CY7C1420KV18-250BZCT uniquely combines DDR-II burst efficiency, hardware-selectable latency, on-die impedance tuning, and echo-clock–assisted capture - making it optimal for latency-critical, high-reliability embedded memory subsystems.

Availability

CY7C1420KV18-250BZCT is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, telecom baseband processing, and industrial motion control applications requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.

Supply support for CY7C1420KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications infrastructure markets.

CY7C1420KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for deterministic, low-jitter memory interfacing in high-speed digital systems where burst bandwidth and timing predictability are critical.

FAQ

What is the function of the DOFF pin on CY7C1420KV18-250BZCT?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it enables 1.5-cycle DDR II latency for improved timing margin in high-frequency systems; when LOW, it reverts to 1-cycle DDR I latency for backward compatibility. This is a static hardware configuration, not a dynamic register setting.

Can CY7C1420KV18-250BZCT operate without external C and C clocks?

Yes - the device supports single-clock mode where K and K serve as both input and output clocks. In this mode, CQ/CQ remain functional but are derived from K/K instead of C/C, and read data is driven on K/K rising edges. System timing margin is reduced compared to dual-clock operation.

How is output impedance calibrated using the ZQ pin?

ZQ connects to a precision 240 Ω resistor to ground; the device measures this resistance and adjusts internal drive strength to achieve 0.2 × RQ (i.e., 48 Ω) output impedance. Direct connection to VDDQ enables minimum-impedance mode (~30 Ω). ZQ must never be left floating or tied to GND.

What is the role of BWS[3:0] in byte write operations?

BWS[3:0] are active-LOW byte write selects controlling four independent 9-bit segments of the 36-bit DQ bus. Each BWS bit enables writing to its corresponding byte group (e.g., BWS0 → DQ[8:0]); unselected bytes retain prior contents, enabling efficient partial writes without read-modify-write cycles.