Infineon Technologies CY7C1420KV18-300BZXC

Overview

CY7C1420KV18-300BZXC from Cypress Semiconductor is a 36-Mbit (1M × 36) DDR II synchronous pipelined SRAM with two-word burst architecture, 300 MHz clock operation, 1.8 V core supply, HSTL I/O, and echo clocks (CQ/CQ) for precise high-speed data capture in networking and telecom line cards.

For engineers reviewing the CY7C1420KV18-300BZXC datasheet, CY7C1420KV18-300BZXC pinout, CY7C1420KV18-300BZXC application, or CY7C1420KV18-300BZXC equivalent, key selection criteria include DDR-II read latency (1.5 cycles with DOFF HIGH), dual-output-clock timing control (C/C), programmable output impedance via ZQ, and 165-ball FBGA package compatibility with high-density memory subsystems.

Technical Context

The CY7C1420KV18-300BZXC implements a synchronous, self-timed write architecture with internal burst counter driven by A0, delivering two sequential 36-bit words per access. It supports both dual-clock (C/C) and single-clock (K/K) output modes, with echo clocks CQ/CQ phase-aligned to C/C for deterministic data capture at 600 Mbps per data pin.

Its DDR-II interface uses rising edges of complementary input clocks K/K for address and data registration, while output data is edge-aligned to C/C (or K/K). The integrated PLL ensures accurate data placement, and ZQ pin enables dynamic output impedance calibration to match system trace impedance - critical for signal integrity above 300 MHz.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with IS45S32800J-3BLI and MT47H64M4SH-3:G, CY7C1420KV18-300BZXC delivers guaranteed 1.5-cycle DDR-II latency, on-die ZQ calibration, and echo clocks - making it uniquely suited for tightly timed, multi-SRAM subsystems where per-device timing predictability is non-negotiable.

Availability

CY7C1420KV18-300BZXC is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, baseband processing units, and industrial real-time controllers requiring stable component supply, long-lifecycle support, and consistent FBGA packaging across production batches.

Supply support for CY7C1420KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1420KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory subsystems in carrier-grade networking and real-time signal processing equipment.

FAQ

What is the function of the DOFF pin on CY7C1420KV18-300BZXC?

The DOFF (DDR Off) pin selects read latency mode: when asserted HIGH, the device operates in DDR-II mode with 1.5-cycle read latency and enhanced timing margin; when LOW, it reverts to DDR-I mode with 1-cycle latency. This pin directly controls internal pipeline depth and must be held static during operation - it is not dynamically switchable mid-burst.

Can CY7C1420KV18-300BZXC operate with only K and K clocks, without C and C?

Yes - the device supports single-clock mode where C and C are tied to K and K respectively. In this configuration, output data is driven on K/K rising edges, and CQ/CQ are generated relative to K/K. However, echo-clock benefits (deskew, timing margin) are lost, and maximum reliable data rate drops to 500 Mbps due to increased clock-to-out variation.

How is output impedance calibrated using the ZQ pin?

ZQ is connected to a precision 240 Ω resistor to ground; the device measures this reference and adjusts its DQ, CQ, and CQ output driver strength to achieve 48 Ω (0.2 × 240 Ω) output impedance. If ZQ is tied to VDDQ, the device enters minimum-impedance mode (~30 Ω), suitable for short-trace, low-capacitance interfaces.

What is the purpose of BWS[3:0] in CY7C1420KV18-300BZXC?

BWS[3:0] are active-LOW byte write select signals controlling four independent 9-bit data segments (D[8:0], D[17:9], D[26:18], D[35:27]). During a write, only selected bytes are updated; unselected bytes retain prior content. This eliminates read-modify-write overhead and reduces power consumption in partial-write scenarios common in packet header manipulation.