Infineon Technologies CY7C1420KV18-333BZI

Overview

CY7C1420KV18-333BZI from Cypress Semiconductor is a 36-Mbit (1M × 36) DDR II synchronous SRAM with two-word burst architecture, 333 MHz clock operation, and double-data-rate interface delivering 666 MT/s effective throughput. It features dual input clocks (K/K), echo clocks (CQ/CQ), programmable output impedance via ZQ, and operates from a 1.8 V core supply with HSTL I/O compatible with 1.5 V or 1.8 V VDDQ. Used in high-bandwidth networking packet buffers and telecom line-card data path memory.

For engineers reviewing the CY7C1420KV18-333BZI datasheet, CY7C1420KV18-333BZI pinout, CY7C1420KV18-333BZI application, or CY7C1420KV18-333BZI equivalent, key selection criteria include DDR-II read latency (1.5 cycles with DOFF HIGH), 165-ball FBGA package compatibility, burst-addressing behavior, HSTL drive strength configurability, and JTAG 1149.1 test access support.

Technical Context

The device implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K/K to enable two-word sequential reads/writes. All synchronous inputs-including R/W, LD, BWS[3:0], and DQ[35:0]-are registered on K/K edges, while outputs are edge-aligned to C/C (or K/K in single-clock mode).

It integrates a PLL for precise data placement, echo clocks CQ/CQ synchronized to C/C for simplified high-speed data capture, and supports both DDR-I (1-cycle latency, DOFF LOW) and DDR-II (1.5-cycle latency, DOFF HIGH) timing modes. Output impedance is calibrated via ZQ pin using external resistor to ground, setting Q[35:0] drive strength to 0.2 × RQ.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with AS7C33618A-333BIN and IS61WV102436BLL-333TQLI, CY7C1420KV18-333BZI provides superior timing margin via echo clocks and impedance calibration, supports dual DDR latency modes for flexible controller design, and includes JTAG for production testability - critical for high-reliability telecom and test equipment.

Availability

CY7C1420KV18-333BZI is available at Aetrix Electronics and suitable for telecom line card development, high-speed packet switching systems, baseband processing units, and automated test equipment requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1420KV18-333BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with emphasis on signal integrity and system-level integration.

CY7C1420KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in synchronous digital systems where deterministic timing and robust signal integrity are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1420KV18-333BZI?

The DOFF (DDR Off) pin configures the device's read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle latency; when LOW, it reverts to DDR-I timing with 1-cycle latency. This pin directly controls internal pipeline staging and must be held static during operation - it is not dynamically switchable mid-burst. The mode affects controller timing setup and cannot be changed during active memory access.

Can CY7C1420KV18-333BZI operate with only K clock (single-ended) instead of K/K differential pair?

Yes - the device supports single-clock mode where K serves as the sole input clock and K is tied to VSS or left unconnected. In this configuration, all synchronous inputs and outputs reference K only, and C/C clocks default to K/K. However, echo clocks CQ/CQ remain functional and aligned to K, preserving their benefit for data capture. Full DDR-II performance and skew mitigation require both K/K and C/C.

How is output impedance calibrated using the ZQ pin?

ZQ connects to an external precision resistor (RQ) tied to ground; the device measures this resistance and sets its DQ[35:0] output driver strength to 0.2 × RQ. Typical RQ values are 240 Ω (yielding ~48 Ω drive) or 120 Ω (~24 Ω). Direct connection to VDDQ enables minimum impedance mode (~17 Ω). ZQ must never be left floating or tied to VSS, as this disables calibration and may cause signal integrity failure.

Does CY7C1420KV18-333BZI support depth expansion with other identical devices?

Yes - depth expansion is supported using LD and R/W signals to enable bank-select logic external to the SRAM. Multiple CY7C1420KV18-333BZI devices can share DQ[35:0], K/K, C/C, and CQ/CQ buses while using discrete LD lines to select active banks. Address bits beyond A19 are decoded externally; the internal 20-bit address space (A19:A0) remains unchanged per device, preserving burst behavior across expanded configurations.