Infineon Technologies CY7C1420KV18-333BZXI

Overview

CY7C1420KV18-333BZXI from Cypress Semiconductor is a 36-Mbit (1M × 36) DDR II synchronous SRAM with two-word burst architecture, 333 MHz clock operation, 666 MHz effective data rate, and 1.8 V core supply with HSTL I/O. It supports programmable output impedance via ZQ, echo clocks (CQ/CQ) for timing margin, and PLL-based data placement-used in high-bandwidth packet buffering and network line-card memory subsystems.

For engineers reviewing the CY7C1420KV18-333BZXI datasheet, CY7C1420KV18-333BZXI pinout, CY7C1420KV18-333BZXI application, or CY7C1420KV18-333BZXI equivalent, key selection criteria include DDR-II read latency (1 or 1.5 cycles via DOFF), dual-clock domain support (K/K and C/C), 165-ball FBGA package compatibility, and JTAG 1149.1 test access for production validation.

Technical Context

The CY7C1420KV18-333BZXI implements a synchronous pipelined architecture with internal burst counter driven by A0, delivering two sequential 36-bit words per access. All address, control, and write data inputs are registered on rising edges of K and K clocks, while read data is edge-aligned to C and C (or K/K in single-clock mode).

It integrates echo clocks CQ/CQ synchronized to C/C for receiver-side deskew, supports variable-drive HSTL outputs (1.4 V to VDD), and uses on-chip PLL for precise data-eye centering. The device operates in either DDR-I mode (1-cycle read latency, DOFF = LOW) or DDR-II mode (1.5-cycle read latency, DOFF = HIGH), with byte-write select pins BWS[3:0] enabling partial-word writes.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant Pb-free option (BZXI suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Compared with IS61WV102436BLL-15BLI and R1EX24036ASB-166B, CY7C1420KV18-333BZXI delivers 2.2× higher bandwidth, integrated skew compensation via CQ/CQ, and production-ready JTAG diagnostics-making it optimal for new high-speed infrastructure designs where timing margin and test coverage are critical.

Availability

CY7C1420KV18-333BZXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment data capture, and industrial real-time controller cache requiring stable component supply across extended product lifecycles.

Supply support for CY7C1420KV18-333BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and system-level timing robustness.

CY7C1420KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for deterministic, low-jitter memory subsystems in multi-gigabit communication infrastructure where burst efficiency and echo-clock synchronization are essential.

FAQ

What is the function of the DOFF pin on CY7C1420KV18-333BZXI?

The DOFF (DDR Off) pin selects read latency mode: when asserted LOW, the device operates in DDR-I mode with 1-cycle read latency; when HIGH, it enables DDR-II mode with 1.5-cycle latency. This setting directly determines the controller's data-valid timing window and must be fixed at power-up-no runtime switching is supported.

Can CY7C1420KV18-333BZXI operate with only K and K clocks, without C and C?

Yes. In single-clock mode, the device uses K and K for both input latching and output data timing. Read data is driven on the rising edges of K and K instead of C and C, and echo clocks CQ/CQ are generated relative to K/K. This reduces clock routing complexity but sacrifices deskew capability across multiple devices.

How does ZQ calibration affect signal integrity in CY7C1420KV18-333BZXI?

ZQ calibration adjusts the output driver impedance of DQ and CQ pins to match the system's 50 Ω data bus. By connecting a 240 Ω resistor from ZQ to GND, the device sets its output impedance to 48 Ω (0.2 × 240 Ω), minimizing reflections and ensuring clean eye diagrams-even across wide temperature ranges and voltage variations.

Is CY7C1420KV18-333BZXI pin-compatible with CY7C1418KV18-333BZXI?

No. Although both share the same 165-ball FBGA package and many signal names, CY7C1420KV18 (1M × 36) has 36 data lines (DQ[35:0]) and four byte-write selects (BWS[3:0]), whereas CY7C1418KV18 (2M × 18) uses DQ[17:0] and BWS[1:0]. Their pin mappings differ significantly-especially in DQ, BWS, and address pin assignments-as shown in the official pin configuration diagrams.