Infineon Technologies CY7C1423AV18-267BZC

Overview

CY7C1423AV18-267BZC from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR-II Synchronous Pipelined SRAM with 300 MHz clock operation, 600 MHz effective data rate, and dual-port DDR-II SIO architecture supporting independent read/write data paths. It features echo clocks (CQ/CQ), DLL-based data alignment, and 1.8 V core with HSTL I/O for high-speed networking and packet buffering applications.

For engineers reviewing the CY7C1423AV18-267BZC datasheet, CY7C1423AV18-267BZC pinout, CY7C1423AV18-267BZC application, or CY7C1423AV18-267BZC equivalent, key selection criteria include burst depth (2-word), synchronous self-timed writes, variable-drive HSTL outputs, and 165-ball FBGA (15 × 17 × 1.4 mm) mechanical compatibility.

Technical Context

This SRAM implements a true separate I/O DDR architecture: read and write ports share the address bus but use independent data paths (D[17:0] inputs, Q[17:0] outputs), eliminating bus turnaround delay. Address latching occurs on alternate rising edges of K/K, enabling 2-word burst access per clock cycle.

Internal timing relies on a Delay Lock Loop (DLL) to align output data with echo clocks CQ/CQ, while synchronous writes are controlled by on-chip self-timed circuitry. All I/O uses HSTL-compatible signaling with programmable drive strength and expanded output voltage range (1.4 V to VDD).

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Compared with AS7C33618A-20BIN and IS61WV102418BLL-10BLI, the CY7C1423AV18-267BZC delivers 10× higher effective bandwidth and deterministic DDR timing - essential for real-time packet processing and high-speed test instrumentation where latency predictability outweighs BOM cost savings.

Availability

CY7C1423AV18-267BZC is available at Aetrix Electronics and suitable for telecom packet buffering, high-speed test equipment memory, industrial motion controller FIFO, and avionics data acquisition buffer applications requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1423AV18-267BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C142xAV18 family was designed specifically for high-throughput, low-latency buffering in DDR-controlled systems - targeting network switches, protocol analyzers, and real-time control where burst efficiency and clock-aligned data capture are mandatory.

FAQ

What is the meaning of "267" in CY7C1423AV18-267BZC?

The "267" suffix denotes the maximum guaranteed access speed grade: 267 MHz clock frequency (3.75 ns period), corresponding to the -267 speed bin defined in the datasheet. This rating ensures all AC timing parameters - including tKQ (clock-to-output delay) and tKHK (clock hold time) - meet specification at 267 MHz under worst-case voltage and temperature conditions.

Does CY7C1423AV18-267BZC require external termination resistors?

Yes - HSTL Class I outputs require 25 Ω series source termination at the driver (SRAM side) and 50 Ω parallel termination to VTT (1.5 V) at the receiver. The ZQ pin enables on-die calibration of output driver impedance against an external 240 Ω reference resistor, but board-level termination remains mandatory for signal integrity at 600 MT/s.

Can CY7C1423AV18-267BZC operate in single-clock mode?

Yes - when C and C are not used, the device defaults to single-clock mode using K and K for both address/data capture and output timing. In this mode, read data is driven on rising edges of K/K, and echo clocks CQ/CQ are disabled. Setup/hold margins tighten, limiting max usable frequency to ~200 MHz instead of 267 MHz.

Is JTAG boundary scan functional during normal SRAM operation?

Yes - the IEEE 1149.1 TAP controller operates independently of memory function. Boundary scan can be executed at any time without disrupting active read/write operations, provided TMS, TCK, TDI, and TDO pins are not otherwise asserted by the host system. Scan testing does not affect stored data or timing behavior.