Infineon Technologies CY7C1423JV18-267BZXCT

Overview

CY7C1423JV18-267BZXCT from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR-II Synchronous Pipelined SRAM with Separate I/O architecture, operating at 267 MHz clock frequency and delivering 534 MB/s peak bandwidth via double-data-rate transfers. It features dual input clocks (K/K), dual output clocks (C/C), echo clocks (CQ/CQ), and 1.8V core supply with HSTL I/O for high-speed memory buffering in network packet processors.

For engineers reviewing the CY7C1423JV18-267BZXCT datasheet, CY7C1423JV18-267BZXCT pinout, CY7C1423JV18-267BZXCT application, or CY7C1423JV18-267BZXCT equivalent, key selection criteria include burst-2 DDR timing compliance, 165-ball FBGA package compatibility, HSTL-18 I/O voltage range (1.4V–1.8V), DLL-enabled data placement accuracy, and JTAG 1149.1 test access support.

Technical Context

This SRAM implements a synchronous pipelined read/write architecture with physically separated read and write ports-eliminating data bus turnaround delays. Address latching occurs on alternating rising edges of K/K, while write data is registered on both K and K edges, and read data is driven on C/C rising edges with echo-clock-synchronized capture.

The device integrates a Delay Lock Loop (DLL) for precise internal data-to-clock alignment, supports variable-drive HSTL outputs, and uses ZQ calibration to match output impedance to system trace impedance. All control signals (R/W, LD, BWS[1:0]) are registered synchronously to K, ensuring deterministic setup/hold timing across temperature and voltage.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with AS7C33618B-25JIN and IS61WV102418BLL-10BLI, CY7C1423JV18-267BZXCT delivers 78% higher effective bandwidth at same pin count, enables deterministic DDR timing via DLL and echo clocks, and supports scalable multi-device synchronization - making it optimal for next-generation packet-processing architectures.

Availability

CY7C1423JV18-267BZXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffers, and industrial real-time controller cache applications requiring stable component supply and long-term manufacturing continuity.

Supply support for CY7C1423JV18-267BZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

CY7C1423JV18 belongs to the DDR-II SIO SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where burst-2 DDR timing and echo-clock synchronization eliminate system-level timing uncertainty.

FAQ

What is the minimum supported clock frequency for CY7C1423JV18-267BZXCT?

The device operates down to DC - no minimum clock frequency is specified. Its synchronous architecture allows operation at any frequency up to 267 MHz, with timing parameters scaling linearly per datasheet AC characteristics. At lower frequencies, setup/hold margins increase, improving robustness in noisy environments.

Can CY7C1423JV18-267BZXCT operate in single-clock mode without C and C inputs?

Yes. When C and C are unconnected, the device defaults to single-clock mode using K and K as output timing references. Read data appears on Q[17:0] aligned to K/K rising edges, and echo clocks CQ/CQ track K/K instead of C/C - verified in Functional Overview section of datasheet Rev. *C.

How does ZQ calibration affect output drive strength and signal integrity?

ZQ connects to a 240Ω resistor to ground, enabling internal calibration of output driver impedance to ~50Ω (0.2 × RQ). This matches standard PCB trace impedance, reducing reflections and overshoot. If ZQ is tied to VDDQ, minimum drive strength (≈30Ω) is selected - useful for short traces or reduced EMI requirements.

Is the DLL mandatory for functional operation, or can it be disabled?

The DLL is enabled by default and recommended for all DDR-mode operation. DOFF pin can disable it, but doing so invalidates DLL-dependent timing specs (e.g., tDQSQ, tQH). In DLL-off mode, data output timing reverts to fixed internal delays - acceptable only in non-critical, low-speed, or single-device configurations.