Infineon Technologies CY7C1423KV18-250BZXC

Overview

CY7C1423KV18-250BZXC from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR II synchronous SRAM with separate I/O architecture, 250 MHz maximum operating frequency, 1.8 V core supply, and HSTL-compatible 18-bit bidirectional data interface. It delivers 900 MB/s peak bandwidth via two-word burst reads/writes and supports configurable 1-cycle (DOFF = LOW) or 1.5-cycle (DOFF = HIGH) read latency for high-speed packet buffering in network line cards.

For engineers reviewing the CY7C1423KV18-250BZXC datasheet, CY7C1423KV18-250BZXC pinout, CY7C1423KV18-250BZXC application, or CY7C1423KV18-250BZXC equivalent, key selection criteria include DDR II SIO timing compliance, echo clock (CQ/CQ) synchronization capability, dual-clock domain support (K/K and C/C), and FBGA-165 package thermal/mechanical constraints for multi-chip memory subsystems.

Technical Context

This SRAM implements a pipelined, synchronous burst architecture with physically separated read and write ports-eliminating bus turnaround delays. It uses rising edges of complementary K/K clocks to latch addresses and write data, and rising edges of C/C clocks to drive read data with echo clocks CQ/CQ aligned to output timing.

The device integrates a PLL for precise data placement, supports programmable output impedance via ZQ calibration, and provides byte-write select (BWS0/BWS1) for partial-word writes without disturbing adjacent bytes. Its 1.5-cycle read latency mode enables tighter system-level timing closure in high-frequency DDR II memory interfaces.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with IS61WV102418BLL-10BLI and MT46H32M18LFBF-6 IT, CY7C1423KV18-250BZXC uniquely delivers true DDR II SIO operation with echo clocks and zero-refresh deterministic latency-critical for time-sensitive packet buffering and real-time control loops.

Availability

CY7C1423KV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffers, and industrial real-time controller cache applications requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1423KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1423KV18 belongs to Cypress's DDR II SIO SRAM product line, engineered specifically for deterministic, high-throughput memory subsystems in networking and telecom infrastructure where bus turnaround elimination and echo-clock synchronization are essential.

FAQ

What is the function of the DOFF pin on CY7C1423KV18-250BZXC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle DDR II read latency; when LOW, it reverts to 1-cycle DDR I behavior. This setting directly affects the number of clock cycles between address assertion and valid data on Q[17:0], and must be stable before initialization completes.

Can CY7C1423KV18-250BZXC operate with only K and K clocks, without C and C?

Yes - in single-clock mode, the device uses K and K to clock both input and output registers. In this configuration, C and C pins are unused, and read data is driven on rising edges of K/K instead of C/C. Echo clocks CQ/CQ remain functional and track K/K timing in this mode.

How does ZQ pin calibration affect signal integrity?

ZQ connects to an external precision resistor (typically 240 Ω) to ground, enabling on-die calibration of output driver impedance for Q[17:0], CQ, and CQ pins. This ensures consistent 50 Ω output impedance matching to PCB traces, reducing reflections, overshoot, and timing jitter across the entire 18-bit data bus.

Is CY7C1423KV18-250BZXC compatible with standard DDR2 SDRAM controllers?

No - it is not compatible. CY7C1423KV18-250BZXC is a synchronous SRAM with DDR II SIO interface and no refresh, command decoding, or bank architecture. It requires a dedicated controller supporting burst load (LD), dual-clock domains (K/K and C/C), and echo-clock capture - unlike DDR2 SDRAM's JEDEC-compliant command protocol.